Professor Merlyne De Souza
School of Electrical and Electronic Engineering
Chair in Micro Electronics
Semiconductor Materials and Devices Research Group
+44 114 222 5167
Full contact details
School of Electrical and Electronic Engineering
- Profile
-
I graduated with a BSc in Physics and Mathematics (1985) from the University of Mumbai, a BE. in Electronics and Communications Engineering (1988) from the Indian Institute of Science, Bangalore and a PhD from the University of Cambridge (1994).
I joined as a Junior Research fellow in 鈥95, was promoted to a Senior Research fellow in 鈥98 and was appointed Professor in Electronics and Materials at the Emerging Technologies Research Centre, De Montfort University in 2003.
I joined the EEE department at 91直播 as Professor of Microelectronics in 2007. I work in multi-disciplinary research focused on the physics of devices, materials and their microelectronic applications in computing, communications and energy conversion.
Until now, microelectronics has relied on the versatility of silicon CMOS to deliver enhancement in performance by scaling the MOS transistor. I have worked on various aspects of CMOS such as reliability, high-k gate oxides and Indium for retrograde channels, first introduced in production at the 65 nm node.
However, scaling (as we know it) is now nearing an end and alternate materials and device architectures are required for future semiconductor applications.
Supervised learning for image and speech recognition, autonomous driving and medical diagnosis in Artificial Intelligence (AI) presently rely on CMOS based deep neural networks.
These are inherently power-hungry due to a continuous exchange of information between the required large volume of memory and processing units.
It is expected that such Von Neumann architectures will be replaced by neuromorphic systems that are more akin to a biological brain.
Our team has recently demonstrated ZnO/Ta2O5 solid electrolyte thin film transistors with synaptic capabilities.
I am interested in exploring such memristive devices in neuromorphic applications, electrochemical storage and flexible electronics for health.
My interest in more efficient semiconductors, smart materials and systems that leave a smaller footprint on the environment, spans to GaN for power and RF applications, that I have previously explored in equivalent silicon- based device technologies such as the IGBT and the RF LDMOSFET.
These are driven by the automotive, aerospace, space, renewables, telecoms and consumer/industrial electronics sectors.
Our recent work includes a new class of harmonic RF power amplifiers with record efficiency and output power prototyped using commercial GaN devices.
We are also working towards a p-type MOSHFET and magnetic thin films for 鈥淐MOS in GaN鈥 in power management integrated circuits and current sensors.
- Qualifications
-
- PhD (Engineering), University of Cambridge 1994
- BEng (Electronics & Communications Engineering), Indian Institute of Science Bangalore 1988
- BSc (Physics & Mathematics), University of Bombay 1985
- Research interests
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路 GaN: CMOS, heterogeneous Integration, on-chip inductors/magnetic materials for Power Management Integrated Circuits and power devices.
路 Sensors and actuators for health applications.
路 Memory devices for neuromorphic applications.
路 RF Power Amplifiers.
路 Perovskite solar cells.
- Publications
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Journal articles
- . Ceramics International.
- . Advanced Materials, e2306254.
- . IEEE Electron Devices Magazine, 1(2), 57-58.
- . Advanced Science, e2300791.
- . Journal of Computational Electronics, 22(2), 768-782.
- . IEEE Microwave and Wireless Components Letters, 1-0.
- . ACS Applied Electronic Materials.
- . AIP Advances, 12(6).
- . Frontiers in Electronics, 3.
- . Advanced Optical Materials.
- . physica status solidi (RRL) 鈥 Rapid Research Letters.
- . MRS Advances.
- . Journal of Materials Chemistry C.
- . IEEE Microwave and Wireless Components Letters.
- . IEEE Journal of the Electron Devices Society.
- . IEEE Transactions on Electron Devices.
- . IEEE Transactions on Electron Devices.
- . IEEE Microwave and Wireless Components Letters, 29(2), 137-139.
- . IEEE Electron Device Letters, 39(11), 1752-1755.
- . IEEE Transactions on Circuits and Systems II: Express Briefs, 65(9), 1159-1163.
- . ACS Applied Materials and Interfaces, 10(23), 19812-19819.
- . Applied Physics Letters, 112(15).
- . IEEE Transactions on Electron Devices, 65(4), 1440-1446.
- . Journal of Physics D: Applied Physics, 51(16), 163001-163001.
- . ACS Applied Materials and Interfaces, 10(11), 9782-9791.
- . IET Power Electronics, 11(4), 675-680.
- . IEEE Electron Device Letters, 38(10), 1449-1452.
- . ACS Applied Materials and Interfaces, 9(2), 1609-1618.
- . Journal of Renewable and Sustainable Energy, 7(6), 063115-063115.
- . Journal of Applied Physics, 117(18), 183103-183103.
- . IEEE Journal of Photovoltaics, 5(1), 22-27.
- . Solid-State Electronics, 94, 91-97.
- . Journal of Renewable and Sustainable Energy, 6(2).
- . Journal of Renewable and Sustainable Energy, 6(1).
- . Journal of Applied Physics, 114(18).
- . J Chem Phys, 136(18), 181101.
- . IEEE Transactions on Electron Devices, 59(3), 827-834.
- Position paper on Carbon Nanotubes. Nano Newsletter, 20-21.
- . EPL, 91(6).
- . IEEE Transactions on Electron Devices, 57(7), 1642-1650.
- . Nanotechnology, 21(21).
- . Journal of Applied Physics, 107(6).
- . THIN SOLID FILMS, 518(4), 1177-1179.
- . PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246(11-12), 2572-2576.
- . IEEE Transactions on Microwave Theory and Techniques, 57(11), 2643-2651.
- . Applied Physics Letters, 94(26).
- . Physical Review B - Condensed Matter and Materials Physics, 79(12).
- . Thin Solid Films, 517(1), 412-415.
- . IEEE Transactions on Device and Materials Reliability, 8(2), 277-282.
- . IEEE Transactions on Electron Devices, 55(5), 1109-1115.
- . Applied Physics Letters, 92(9).
- The effect of gate bias stress and temperature on the performance of ZnO Thin Film Transistors. IEEE Trans. Device and Materials Reliability, 8, 277.
- Position paper on Carbon Nanotubes. Nanonewsletter.(13).
- . IEEE Transactions on Electron Devices, 54(11), 2991-2997.
- . IEEE Transactions on Electron Devices, 54(9), 2551-2555.
- . MRS Proceedings, 1035.
- . IEEE Transactions on Microwave Theory and Techniques, 55(5), 829-837.
- . ECS Meeting Abstracts, MA2007-01(29), 1102-1102.
- . IEEE Transactions on Device and Materials Reliability, 7(1), 162-174.
- Ab initio investigation of charge controlled technique for control of Schottky contacts in CNTs. Journal of Materials, 0957, 4522-4522.
- . Applied Physics Letters, 89(26).
- . MRS Proceedings, 957.
- . JOURNAL OF PHYSICS-CONDENSED MATTER, 17(22), S2165-S2170.
- DFT analysis of the Indium-Arsenic-vacancy cluster in silicon. Journal of solid state defects: Defects and diffusion in Semiconductors: An Annual Retrospective VIII, 29-29.
- Defect interaction mechanisms between antimony and indium in silicon. GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 108-109, 425-430.
- . IEEE Transactions on Engineering Management, 52(4), 429-439.
- . IEEE Transactions on Electron Devices, 52(9), 2075-2080.
- . Nanotechnology, 16(10), 2188-2192.
- Interactions of indium, arsenic and carbon in silicon using the pseudopotential technique. SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY, 810, 333-338.
- . Microelectronics Reliability, 44(1), 25-32.
- . Physical Review B - Condensed Matter and Materials Physics, 69(3).
- . Microelectronics Journal, 35(3), 305-310.
- . IEE Proceedings: Circuits, Devices and Systems, 151(3), 203-206.
- . IEEE Transactions on Electron Devices, 51(8), 1296-1303.
- . Microelectronics Journal, 35(3), 235-248.
- . IEE Proceedings: Circuits, Devices and Systems, 151(3), 265-268.
- . Solid-State Electronics, 48(12), 2207-2211.
- . Physical Review B - Condensed Matter and Materials Physics, 68(19).
- . MICROELECTRONICS RELIABILITY, 43(4), 617-624.
- . Solid-State Electronics, 47(11), 1937-1941.
- . Physical Review B - Condensed Matter and Materials Physics, 66(4), 452051-452056.
- . Physical Review Letters, 88(8), 085501/1-085501/4.
- Advancement on power semiconductor Devices. Power Electronics Europe(6), 28-35.
- . Applied Physics Letters, 80(12), 2192-2194.
- . Solid-State Electronics, 46(2), 255-261.
- . Solid-State Electronics, 46(6), 903-909.
- . IEEE Electron Device Letters, 23(12), 725-727.
- Clustered Insulated Gate Bipolar Transistor - A New Power Semiconductor Device. IEE Proceedings Special Issue: Circuits, Devices and systems, 148 (2), 75-78.
- The Injection-Enhancement Effect in a Novel, Trench Planar Insulated Gate Bipolar Transistor. IEE Proceedings Special Issue: Circuits, Devices and Systems,, 148(2), 79-82.
- A Comparison of Early Stage Hot carrier Degradation behaviour in 5V & 3 V submicron Low Doped Drain Metal Oxide Semiconductor Field Effect Transistors. Microelectronics reliability, 42(2), 169.
- Quantifying the nature of hot carrier degradation in the Spacer Region of LDD n MOSFETs. IEEE Transactions on Devices and Materials Reliability, 1, 134.
- . Solid-State Electronics, 45(1), 71-77.
- . Solid-State Electronics, 45(1), 127-132.
- . Microelectronics Journal, 32(5-6), 481-484.
- . Microelectronics Journal, 32(5-6), 527-536.
- . Microelectronics Journal, 32(2), 121-126.
- . Physica B: Condensed Matter, 304(1-4), 483-488.
- . Solid-State Electronics, 45(7), 1055-1058.
- . Microelectronics Journal, 32(4), 323-326.
- . SOLID-STATE ELECTRONICS, 44(8), 1381-1386.
- . MICROELECTRONICS JOURNAL, 31(3), 175-185.
- A Closed form analytical solution of 6H-SiC punch-through junction breakdown voltages. Materials Science Forum, 338-3, 1359.
- Comparison of 5kV 4H-SiC N-channel and P-Channel IGBTs. Material Science Forum, 338-3, 1411.
- . Solid-State Electronics, 44(10), 1869-1873.
- . Solid-State Electronics, 44(7), 1213-1218.
- . Electronics Letters, 36(18), 1587-1589.
- . Electronics Letters, 36(14), 1242-1244.
- . SOLID-STATE ELECTRONICS, 43(10), 1845-1853.
- . Electronics Letters, 35(21), 1880-1880.
- . IEEE Electron Device Letters, 20(11), 580-582.
- . Physical Review Letters, 83(9), 1799-1801.
- Self-diffusion in silicon. Defect and Diffusion Forum, 153-155, 69-80.
- Novel lateral MOS controlled power devices and technologies for high voltage integrated circuits. Solid State Phenomena, 55, 51.
- . Journal of Applied Physics, 79(5), 2418-2425.
- . Electronics Letters, 32(12), 1092-1093.
- . Computational Materials Science, 4(3), 233-240.
- . Solid-State Electronics, 38(4), 867-872.
- . Computational Materials Science, 3(1), 69-77.
- . Electronics Letters, 27(17), 1564-1564.
- . Journal of Materials Chemistry C.
- . Micromachines, 14(8), 1606-1606.
- . ACS Applied Electronic Materials.
Chapters
- , Modeling, Characterization, and Production of Nanomaterials (pp. 271-303). Elsevier
- Carbon Nanotubes: from structural to device properties In Tewary V & Zhang Y (Ed.), Modeling, Characterization and Production of Nanomaterials Woodhead Publishing
- , Modeling, Characterization, and Production of Nanomaterials (pp. 203-231). Elsevier
- Drift Engineering of Silicon RF Power MOSFETs In Cai WZ (Ed.), Si-based semiconductor components for radio-frequency integrated circuits (RFIC)
Conference proceedings papers
- . 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 3 March 2024 - 6 March 2024.
- . 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 22 October 2023 - 25 October 2023.
- . 2023 IEEE International Flexible Electronics Technology Conference (IFETC), 13 August 2023 - 16 August 2023.
- . 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 7 March 2023 - 10 March 2023.
- . 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 7 March 2023 - 10 March 2023.
- Fabrication of Graphene Oxide from the Graphite rod of a disposed battery. Proceedings of the 6th international conference on green technology and sustainable development
- . 2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Vol. 00 (pp 1-3)
- . 2021 28th International Conference on Mixed Design of Integrated Circuits and System, 24 June 2021 - 26 June 2021.
- , Vol. 00 (pp 1-3)
- . 2019 IEEE Asia-Pacific Microwave Conference (APMC), 10 December 2019 - 13 December 2019.
- Class BJF-1: Simplifying the design methodology of RF Power Amplifiers. Book of abstracts AARMS, 1 April 2019 - 2 April 2019.
- . Proceedings of the 3rd Electron Devices Technology manufacturing conference.. Singapore, 13 March 2019 - 15 March 2019.
- Influence of an underlying 2DEG on the performance of a p-channel MOSHFET in GaN. Proceedings of the IWN 2018
- Solid Electrolyte Transistors: Mechanisms and Applications. Book of abstracts 7th TCM Greece
- Class BJF-1- A new class of amplifier for high efficiency and output power. Proceedings of the 9th Wide Bandgap Semiconductors and Components Workshop, 8 November 2018 - 9 October 2018.
- . 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp 184-186)
- Mechanism of Turn-Off Operation in E-mode p-channel MOSHFET in GaN. UK Semiconductors 2017 book of abstracts
- Raman spectroscopy characterisation of laser induced degradation in methyl ammonium lead iodide perovskite layers. UK Semiconductors 2017
- Highly oriented (202) mixed halide perovskite for enhanced solar cell performance. UK Semiconductors book of abstracts 2017
- . Proceedings of the 26th International Symposium on Industrial Electronics (pp 612-615), 19 June 2017 - 21 June 2017.
- Enhancement mode p-channel devices for GaN CMOS.. Proceedings of the International Conference on Optimisation of Electrical and Electronic Equipment, OPTIM
- . 2016 IEEE International Electron Devices Meeting (IEDM)
- The behaviour and peculiarities of ZnO/Tantalum oxide memristor system. Book of abstracts TCM 2016
- Diffusion mechanism of vacancies in Tantalum oxide. TCM 2016
- Memory and Learning behaviour of ZnO based transparent synaptic thin film transistors. TCM 2016
- Engineering the threshold Voltage in p-channel GaN HFETs. Proceedings of the ISPS 2016
- . Proceedings of the 2016 10th International Symposium on Communication Systems, Networks and Digital Signal Processing (CSNDSP) (pp 1-6)
- Evaluation of the Analytic Approach for design of deep class AB Power Amplifiers in GaN. Book of abstracts UK semiconductors
- Theoretical modelling of 2DHG in Oxide/GaN/AlGaN/GaN heterostructures. Book of abstracts UK semiconductors
- Centimetre scale mesoscopic perovskite solar cells via a novel combined solid state-solution crystallisation method. Book of abstracts UK Semi 2016
- . Proceedings of the Active and Passive RF devices Seminar (pp 8 (7 .)-8 (7 .)-8 (7 .)-8 (7 .))
- . Proceedings of the IEDM (pp 28.1.1-28.1.4)
- . 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 10 May 2015 - 14 May 2015.
- . 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 15 March 2015 - 19 March 2015.
- . Proceedings of ICCDCS 2014 (pp 1-5)
- . Technical Digest - International Electron Devices Meeting, IEDM
- . Proceedings of the International Conference on Optimisation of Electrical and Electronic Equipment, OPTIM (pp 822-826)
- Progress of Power devices in RF Applications. Proceedings of the ISPS
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 8549
- Band structure modifications in self assembled graphene superlattice probed by dispersive Raman spectroscopy. UK Semiconductors 2011. 91直播, 2011.
- . ECS Transactions, Vol. 35(4) (pp 563-580)
- . Proceedings of the Mediterranean Electrotechnical Conference - MELECON (pp 691-694)
- . Proceedings of the International Conference on Optimisation of Electrical and Electronic Equipment, OPTIM (pp 180-184)
- . 2009 Compact Thin-Film Transistor Modeling for Circuit Simulation, 25 September 2009 - 25 September 2009.
- Scattering at MOS Interfaces. WORLD CONGRESS ON ENGINEERING 2009, VOLS I AND II (pp 392-+)
- Dit characterisation from small signal analysis of Poly/TiN HfO2 gated MOSFETS. International Gate Stack Conference. San Fransisco
- Semi-Empirical Phonon Scattering Model. WORLD CONGRESS ON ENGINEERING 2009, VOLS I AND II (pp 417-+)
- . JOURNAL OF SCIENTIFIC CONFERENCE PROCEEDINGS, VOL 1, NO 1, Vol. 1(1) (pp 24-28)
- . APMC 2009 - Asia Pacific Microwave Conference 2009 (pp 1112-1115)
- Effect of Hydrazine on Al contacted CNTFETs using density functional theory. Journal of Scientific Conference Proceedings, Vol. 1 (pp 19-23)
- Performance of ZnO TFTs with AlN as insulator. Materials Research Society Symposium Proceedings, Vol. 1035 (pp 176-180)
- . JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18(7) (pp 729-734)
- The impact of Fermi pinning on thermal properties of the instabilities in ZnO TFTs. ZINC OXIDE AND RELATED MATERIALS, Vol. 957 (pp 403-+)
- . 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL (pp 467-+)
- Performance and Stability of ZnO TFTs with SiO2, SiN and AlN gate insulators. Proceedings of the MRS 2007 Multifunctional oxides. Greece, 2007.
- . MRS Proceedings, Vol. 963
- Experimental study of the impact of SO phonon scattering in high-魏 gate dielectric MOSFETs. 210th Transactions of the Electrochemical society, Vol. 3. Cancun
- . ECS Transactions, Vol. 3(3) (pp 49-56)
- . IEEE International Reliability Physics Symposium Proceedings, Vol. 2004-January(January) (pp 283-287)
- Influence of temperature and doping parameters on the performance of segmented anode NPN (SA-NPN) LIGBT. ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 285-287)
- . 2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS (pp 283-287)
- A study of indium activation in silicon using pseudopotential calculations. 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2 (pp 283-286)
- Edge effect under temperature bias stress of 0.18 mu m PMOS technology. 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2 (pp 645-648)
- . IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vol. 16 (pp 241-244)
- . IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vol. 16 (pp 269-272)
- Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 216-219)
- 1.7kV NPT V-groove clustered IGBT - Fabrication and experimental demonstration. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 345-348)
- Anode-gated MOS controlled thyristor with ultra-fast switching capability. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 299-302)
- . Materials Research Society Symposium - Proceedings, Vol. 716 (pp 317-323)
- . ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems
- Novel dual gate high voltage TFT with variable doping slot. 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS (pp 155-158)
- . PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (pp 227-231)
- Nature of hot carrier damage in Spacer oxide of LDD n-MOSFETs. 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS (pp 735-739)
- Influence of physical parameters on the quasi-saturation of a power SOI RF LDMOS. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp 314-318)
- . IEE Conference Publication(487) (pp 557-561)
- Overview of trench gated MOS-Controlled bipolar semiconductor power devices. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4746 I (pp 444-449)
- Advances in devices and technologies for power and high voltage integrated circuits. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4746 I (pp 422-431)
- The investigation into the recent mergers and acquisitions in power semiconductor industry. IEEE International Engineering Management Conference, Vol. 2 (pp 826-830)
- The accumulation enhanced emitter switched thyristor - a novel area efficient power semiconductor device. 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS (pp 151-154)
- Innovation and competition: Are they crucial in power semiconductor industry? A market perspective. 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS (pp 7-13)
- . IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, Vol. 148(2) (pp 79-82)
- Clustered insulated gate bipolar transistor: a new power semiconductor device. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, Vol. 148(2) (pp 75-78)
- A novel, 1.2 kV trench clustered IGBT with ultra high performance. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 323-326)
- . Annual Proceedings - Reliability Physics (Symposium) (pp 108-111)
- A novel area efficient edge termination technique for planar, MOS controlled power devices. PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, Vol. 3975 (pp 349-352)
- . 12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS (pp 313-316)
- Clustered IGBT - A new power semiconductor device. PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, Vol. 3975 (pp 1307-1312)
- Self-interstitial clusters in silicon. Materials Research Society Symposium - Proceedings, Vol. 610
- Resurfed lateral bipolar transistors for high-voltage, High-frequency applications. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 185-187)
- A novel, clustered insulated gate bipolar transistor for high power applications. Proceedings of the International Semiconductor Conference, CAS, Vol. 1 (pp 173-181)
- The radial confinement: A new approach to high voltage lateral power devices. Proceedings of the International Semiconductor Conference, CAS, Vol. 1 (pp 349-352)
- Influence of the N plus floating emitter on the on-state characteristics of the trench EST. 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS (pp 329-332)
- Novel dual gated lateral MOS-Bipolar power device. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 261-264)
- Trench planar insulated gate bipolar transistor (TPIGBT). Proceedings of the International Semiconductor Conference, CAS, Vol. 1 (pp 51-54)
- Analysis of a COOL-MOSFET. Proceedings of the International Semiconductor Conference, CAS, Vol. 1 (pp 131-135)
- Influence of a shallow p+ offset region on a novel edge termination technique using lightly doped p-rings. Proceedings of the International Semiconductor Conference, CAS, Vol. 1 (pp 63-66)
- High performance 60-V class lateral power MOSFET on thin film SOI with a graded doping profile in the drift region. Proceedings of the International Semiconductor Conference, CAS, Vol. 1 (pp 123-126)
- The trench planar insulated gate bipolar transistor (TPIGBT). IEE Colloquium (Digest)(104) (pp 75-79)
- . ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 221-224)
- . MOS-AK Workshop, 3 July 2022 - 5 July 2022.
- A study of the mechanism of the nonlinear input capacitance on the RF performance in GaN HEMT devices. Automated RF and Microwave Measurement Society (ARMMS) 33rd conference. Wyboston, 9 November 2015 - 10 November 2015.
- Engineering of the window layer for optimum performance of thin film silicon solar cells. 4th International Symposium on Energy Challenges & Mechanics. Aberdeen, Scotland, 11 August 2015 - 13 August 2015.
- A New Generation of Clustered IGBT with High Ruggedness. PCIM. Shanghai, 25 June 2015 - 25 June 2015.
- Stability of transparent oxide thin film transistors. Thirteenth international meeting on information displays. Daegu Korea, 2013.
- Extraction of Schottky Barrier in the presence of bias dependent ideality factors in ZnO/渭c-Si:H heterojunctions for solar cells. Fourth international symposium on transparent conductive materials. Greece, 2012.
- Investigating Reverse Intermodulation Distortion in Power Amplifiers. UK Semiconductors. 91直播, 2012.
- Investigation into the Fabrication of Vanadium Dioxide Thin Films using the Precursor Oxidation Process. UK Semiconductors. 91直播, 2012.
- Importance of band gap on the performance prediction in carbon nanotube and graphene nanoribbon devices. UK Semiconductors. 91直播, 2012.
- Analytic Approach to design of harmonically tuned RF Power Amplifiers. UK Semiconductors. 91直播, 2011.
- 鈥淗igh-k Gate Dielectric MOSFETs: Meeting the challenges of characterisation and modelling鈥,. ECS Transactions 35(4), 563 (2011).
- Ab initio investigation of the doping effect of epitaxial graphene via intercalation of a gold monolayer. 10th International conference on the science of application of Nanotubes 2009. Beijing, 2010.
- Variation of dielectric permittivity through insulator/silicon interface: Effect on Coulomb limited mobility in MOSFETs. UK Semiconductors. 91直播, 2010.
- Investigating the TCO ZnO and p-type microcrystalline silicon contact for thin film solar cells. Third International conference on Transparent Conducting Materials, Greece 2010. Greece, 2010.
- Diameter dependent electrical measurements of individual SW-CNTFET. Final Fone Conference. Madrid, 2009.
- Surface intercalation of gold underneath a graphene monolayer on SiC(0001) studied by Scanning Tunneling Microscopy (STM) and Spectroscopy (STS). 10th International conference on Atomically controlled surfaces, interfaces and nanostructures. Granada, 2009.
- Carbon based electronics- A perspective from theory and experiment. Final Fone Conference. Madrid, 2009.
- Mixed Ab-initio Quantum Mechanical/Monte Carlo Calculations to Probe Electronic Correlations in Graphite and Graphene Nanostructures. MRS. san Fransisco, 2009.
- Diameter dependence of the charge transfer between CNTs and a chemical p-type dopant. MRS. Boston, 2008.
- Schottky barrier Heights of Carbon nanotube FETs: Experiment versus Theory. ICCES. Honolulu, 2008.
- Electronic Properties of carbon based nanostructures from GW calculations. Nanotubes 2008. Montpellier, 2008.
- Highlights of progress on the determination of intrinsic transport properties of CNTFETs. First Fone conference. Taormina, Sicily, 2008.
- . ECS Transactions, Vol. 6(16) (pp 61-71)
- (pp 425-432)
- . Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics
- . Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)
- Influence of a graded channel HEMT on the performance of Class BJF-1 amplifiers for 5G applications. Conference Booklet WOCSDICE '21
- Professional activities and memberships
-
- Chair in Microelectronics, EEE Department, University of 91直播 (2007-)
- Research students
Student Degree Status Primary/Secondary Balakrishnapillai P PhD Graduated Primary Casterman D PhD Graduated Primary Chevaux N PhD Graduated Primary Corpus Mendoza A N PhD Graduated Primary Mathew D MPhil Graduated Primary Rasheduzzaman M PhD Graduated Primary Sicre S B F M PhD Graduated Primary Subramani N PhD Graduated Primary Baltynov T PhD Graduated Secondary Unni V PhD Graduated Secondary