@article{article, title  = {{Modelling the threshold voltage of p-channel enhancement-mode GaN heterostructure field-effect transistors}},

 publisher = {{Institution of Engineering and Technology (IET)}},

 url = {{http://eprints.whiterose.ac.uk/124483/ }},

 year = {{2017}},

 month = {{11}},

 author = {{Kumar A and De Souza MM}},

 doi = {{10.1049/iet-pel.2017.0438}},

 volume = {{11}},

 journal = {{IET Power Electronics}},

 issue = {{4}},

 pages = {{675-680}},

 note = {{Accessed on 2024/12/26}}}