TY  - JOUR

T1  - A p-Channel GaN Heterostructure Tunnel FET With High ON/OFF Current Ratio

JO  - IEEE Transactions on Electron Devices

UR  - http://eprints.whiterose.ac.uk/146570/

PY  - 2019/05/23

AU  - Kumar A

AU  - De Souza MM

ED  - 

DO  - DOI: 10.1109/ted.2019.2915768

PB  - Institute of Electrical and Electronics Engineers (IEEE)

Y2  - 2025/01/13

ER  -