TY  - JOUR

T1  - Modelling the threshold voltage of p-channel enhancement-mode GaN heterostructure field-effect transistors

JO  - IET Power Electronics

UR  - http://eprints.whiterose.ac.uk/124483/

PY  - 2017/11/03

AU  - Kumar A

AU  - De Souza MM

ED  - 

DO  - DOI: 10.1049/iet-pel.2017.0438

PB  - Institution of Engineering and Technology (IET)

VL  - 11

IS  - 4

SP  - 675

EP  - 680

Y2  - 2025/01/13

ER  -