TY  - JOUR

T1  - Comparison of 5kV 4H-SiC N-channel and P-Channel IGBTs

JO  - Material Science Forum

PY  - 2000/01/01

AU  - Wang J

AU  - Williams B

AU  - Sankara Narayanan EM

AU  - De Souza MM

ED  - 

VL  - 338-3

SP  - 1411

Y2  - 2025/01/13

ER  -