TY  - JOUR

T1  - Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN

JO  - ACS Applied Electronic Materials

UR  - http://dx.doi.org/10.1021/acsaelm.3c00350

PY  - 2023/06/08

AU  - Zhou J

AU  - Do H-B

AU  - De Souza MM

ED  - 

DO  - DOI: 10.1021/acsaelm.3c00350

PB  - American Chemical Society (ACS)

Y2  - 2025/01/13

ER  -