TY  - CONF

T1  - Edge effect under temperature bias stress of 0.18 mu m PMOS technology

JO  - 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2

PY  - 2004/01/01

AU  - Sekhar DC

AU  - Ray PP

AU  - De Souza MM

AU  - Chaparala P

AU  - ieee

ED  - 

SP  - 645

EP  - 648

Y2  - 2024/12/26

ER  -