TY  - JOUR

T1  - A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators

JO  - IEEE Transactions on Electron Devices

UR  - http://eprints.whiterose.ac.uk/3928/

PY  - 2008/05/01

AU  - Cross RBM

AU  - De Souza MM

AU  - Deane SC

AU  - Young ND

ED  - 

DO  - DOI: 10.1109/TED.2008.918662

VL  - 55

IS  - 5

SP  - 1109

EP  - 1115

Y2  - 2025/01/13

ER  -