TY  - JOUR

T1  - Quantifying the nature of hot carrier degradation in the Spacer Region of LDD n MOSFETs

JO  - IEEE Transactions on Devices and Materials Reliability

PY  - 2001/01/01

AU  - Manhas SK

AU  - De Souza MM

AU  - Oates AS

ED  - 

VL  - 1

SP  - 134

Y2  - 2024/12/26

ER  -