David, John, Professor

Professor John David

PhD, BEng

School of Electrical and Electronic Engineering

Personal Chair

Admissions and Outreach Tutor

j.p.david@sheffield.ac.uk
+44 114 222 5185

Full contact details

Professor John David
School of Electrical and Electronic Engineering

Profile: I obtained my BEng and PhD degrees in Electronic Engineering from the University of 91ֱ�� in 1979 and 1983, respectively.

After that, I undertook a number of postdoctoral positions within the Department of Electronic & Electrical Engineering at 91ֱ�� eventually managing the characterisation activities of the SERC Centre for III–V Semiconductors.

In 2001 I left to join Marconi Optical Components, Caswell before returning the following year as a Senior Lecturer.

In 2004 I became Professor of Semiconductor Materials and Devices, and between 2009 to 2013 served as Head of Department. Between 2002 -2004 I was a IEEE LEOS Distinguished Lecturer and I am currently a Fellow of the IEEE and IET.

My research is focussed in two areas;

on the characterisation of III-V semiconductor materials and devices, especially that containing Bismuth and
on the understanding and development of avalanche photodiodes. The addition to Bismuth offers a possible route to extend the wavelength of many optical structures such as photodiodes and solar cells.
I use characterisation techniques such as X-ray double crystal diffraction and photoluminescence to study semiconductor structures containing bulk and quantum wells of GaAsBi and , and then correlate this to current-voltage, capacitance-voltage and photocurrent spectra of fabricated devices.

I also study how under very high electric-fields, electrons and holes in a semiconductor gain energy and create further carriers through a process of impact ionisation. This process can lead to destructive breakdown in power electronic devices but can also be utilised to amplify weak optical signals, giving rise to avalanche photodiodes (APDs).

I study the theory behind the ionisation process via different modelling techniques and also look experimentally at the ionisation coefficients in different semiconductor materials and device structures.

The aim of my research is to develop APDs capable of operating at very high speeds for next generation telecommunication networks and also APDs that are very sensitive.

Qualifications

PhD (Semiconductors), University of 91ֱ�� 1983
BEng (Electronics), University of 91ֱ�� 1976

Research interests

-Impact Ionisation and breakdown in semiconductors
Photodiode and avalanche photodiodes
Bismuth containing alloys

Publications

Journal articles

Jin X, Zhao S, Craig AP, Tian Q, Gilder L, Yi X, Carmichael M, Golding T, Tan CH, Marshall ARJ & David JPR (2024) . Optica, 11(12), 1632-1632.
Liu Y, Jin X, Jung H, Lee S, Harun F, Ng JS, Krishna S & David JPR (2024) . Applied Physics Letters, 125(22).
Kirdoda J, Mirza M, Smith C, Dumas D, Coughlan C, McCarthy C, Mowbray H, Fleming F, Yi X, Saalbach L , Muir D et al (2024) . ECS Meeting Abstracts, MA2024-02(32), 2330-2330.
Jin X, Lewis HIJ, Yi X, Xie S, Liang B, Huffaker DL, Tan CH & David JPR (2024) . Applied Physics Letters, 124(25).
Fleming F, Yi X, Mirza MMA, Jin X, Kirdoda J, Dumas DCS, Saalbach L, Modak M, Muir DAS, Smith C , Coughlan C et al (2024) . Optics Express, 32(11), 19449-19449.
Ronningen TJ, Kodati SH, Jin X, Lee S, Jung H, Tao X, Lewis HIJ, Schwartz M, Gajowski N, Martyniuk P , Guo B et al (2023) . Applied Physics Letters, 123(13).
Jin X, Lewis HIJ, Yi X, Xie S, Liang B, Tian Q, Huffaker DL, Tan CH & David JPR (2023) . Optics Express, 31(20), 33141-33141.
Sreerag SJ, Sharma AS, Rockett TBO, David JPR, Richards RD & Kini RN (2023) . Applied Physics A, 129(8).
Lewis HIJ, Jin X, Guo B, Lee S, Jung H, Kodati SH, Liang B, Krishna S, Ong DS, Campbell JC & David JPR (2023) . Sci Rep, 13(1), 9936.
Jung H, Lee S, Liu Y, Jin X, David JPR & Krishna S (2023) . Applied Physics Letters, 122(22).
Batool Z, Hild K, Marko I, Mohmad AR, David JPR, Lu X, Tiedje T & Sweeney SJ (2023) . Journal of Materials Science: Materials in Electronics, 34(6).
Lee S, Jin X, Jung H, Lewis H, Liu Y, Guo B, Kodati SH, Schwartz M, Grein C, Ronningen TJ , David JPR et al (2023) . Optica, 10(2).
Singh R, O'Farrell T, Biagi M, Penty RV & David JPR (2023) . Journal of Lightwave Technology, 1-11.
Lee HJ, Ali Gamel MM, Ker PJ, Jamaludin MZ, Wong YH, Yap KS, Willmott JR, Hobbs MJ, David JPR & Tan CH (2023) . Materials Science in Semiconductor Processing, 153, 107135-107135.
Bui T-C, Singh R, OFarrell T, Scarano G, David JPR & Biagi M (2022) . Journal of Lightwave Technology, 1-11.
Rockett TBO, Adham NA, Harun F, David JPR & Richards RD (2022) . Journal of Crystal Growth, 589.
Bailey NJ, Carr MR, David JPR & Richards RD (2022) . Journal of Nanomaterials, 2022.
Ong DS, Tan AH, Choo KY, Yeoh KH & David JPR (2022) . Journal of Physics D: Applied Physics, 55(6), 065105-065105.
Bailey NJ, Rockett TBO, Flores S, Reyes DF, David JPR & Richards RD (2022) . Scientific Reports, 12.
Guo B, Jin X, Lee S, Ahmed SZ, Jones A, Xue X, Liang B, Lewis H, Kodati SH, Chen D , Ronningen TJ et al (2022) . Journal of Lightwave Technology.
Liu Y, Yi X, Bailey NJ, Zhou Z, Rockett TBO, Lim LW, Tan CH, Richards RD & David JPR (2021) . Nature Communications, 12(1).
Gamel MMA, Ker PJ, Lee HJ, Rashid WESWA, Hannan MA, David JPR & Jamaludin MZ (2021) . Scientific Reports, 11(1).
Ahmed J, Xie S, Liang B, Yi X, Jin X, Kesaria M, David JPR & Huffaker DL (2021) . IEEE Journal of Quantum Electronics, PP(99), 1-1.
Lewis HIJ, Qiao L, Cheong JS, Baharuddin ANAP, Krysa AB, Ng BK, Green JE & David JPR (2021) . IEEE Transactions on Electron Devices, 1-6.
Jin X, Xie S, Liang B, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker D, Tan CH , Ong D-S et al (2021) . IEEE Journal of Selected Topics in Quantum Electronics, 1-1.
Hasanah L, Julian C, Mulyanti B, Aransa A, Sumatri R, Johari MH, David JPR & Mohmad AR (2020) . Sains Malaysiana, 49(10), 2559-2564.
Lim LW, Patil P, Marko I, Clarke EM, Sweeney S, Ng JS, David JPR & Tan CH (2020) . Semiconductor Science and Technology.
Flores S, Reyes DF, Braza V, Richards RD, Bastiman F, Ben T, Ruiz-Marín N, David JPR & González D (2019) . Applied Surface Science, 485, 29-34.
Yi X, Xie S, Liang B, Lim LW, Cheong JS, Debnath MC, Huffaker DL, Tan CH & David JPR (2019) . Nature Photonics.
Hossain MM, David JPR & Hayat MM (2019) . Journal of Lightwave Technology, 37(13), 3315-3323.
Richards RD, Rockett TB, Nawawi MR, Harun F, Mellor A, Wilson T, Christou C, Chen S & David JPR (2018) . Semiconductor Science and Technology, 33(9).
Yi X, Xie S, Liang B, Lim LW, Zhou X, Debnath MC, Huffaker DL, Tan CH & David JPR (2018) . Scientific Reports, 8(1).
Qiao L, Dimler SJ, Baharuddin ANAP, Green JE & David JPR (2018) . Measurement Science and Technology, 29(6), 065015-065015.
Wilson T, Hylton NP, Harada Y, Pearce P, Alonso-Álvarez D, Mellor A, Richards RD, David JPR & Ekins-Daukes NJ (2018) . Scientific Reports, 8(1).
Beling A, David J, Hutchinson M, Schow C & Shi J-W (2018) . IEEE Journal of Selected Topics in Quantum Electronics, 24(2), 1-3.
Singh R, O’Farrell T, Biagi M & David JPR (2018) . Physical Communication, 31, 160-168.
Richards RD, Mellor A, Harun F, Cheong JS, Hylton NP, Wilson T, Thomas T, Roberts JS, Ekins-Daukes NJ & David JPR (2017) . Solar Energy Materials and Solar Cells, 172, 238-243.
Hossain MM, Ray S, Cheong JS, Qiao L, Baharuddin ANAP, Hella MM, David JPR & Hayat MM (2017) . Journal of Lightwave Technology, 35(11), 2315-2324.
Cheong JS, Baharuddin A, Ng JS, Krysa AB & David JPR (2017) . Solar Energy Materials and Solar Cells, 164, 28-31.
Xie S, Kim H, Lee W-J, Farrell AC, David JP & Huffaker DL (2016) . Nano Advances.
Jamil E, Cheong JS, David JPR & Hayat MM (2016) . Optics Express, 24(19), 21597-21608.
Zhou X, Zhang S, David J, Ng JS & Tan CH (2016) . IEEE Photonics Technology Letters, 28(22), 2495-2498.
Balanta MAG, Kopaczek J, Orsi Gordo V, Santos BHB, Rodrigues AD, Galeti HVA, Richards RD, Bastiman F, David JPR, Kudrawiec R & Galvão Gobato Y (2016) . Journal of Physics D: Applied Physics, 49(35).
David J (2016) . Nature Photonics, 10(6), 364-366.
Auckloo A, Cheong JS, Meng X, Tan, CH, Ng JS, Krysa AB, Tozer RC & David JPR (2016) . Journal of Instrumentation, 11(3).
White BS, Sandall I, Zhou X, Krysa AB, McEvan K, David J & Tan C (2016) . Journal of Lightwave Technology, 34(11), 2639-2644.
Qiao L, Cheong JS, Ong JSL, Ng JS, Krysa AB, Green JE & David JPR (2016) . IEEE Photonics Technology Letters, 28(4), 481-484.
Cheong JS, Ng JS, Krysa AB, Ong JSL & David JPR (2015) . Journal of Physics D: Applied Physics, 48(40), 405101-405101.
Thomas T, Mellor A, Hylton NP, Führer M, Alonso-Álvarez D, Braun A, Ekins-Daukes NJ, David JPR & Sweeney SJ (2015) . Semiconductor Science and Technology, 30(9), 094010-094010.
White BS, Sandall IC, David JPR & Chee Hing Tan (2015) . IEEE Transactions on Electron Devices, 62(9), 2928-2932.
Mohmad AR, Bastiman F, Hunter CJ, Harun F, Reyes DF, Sales DL, Gonzalez D, Richards RD, David JPR & Majlis BY (2015) . Semiconductor Science and Technology, 30(9), 094018-094018.
Kopaczek J, Linhart WM, Baranowski M, Richards RD, Bastiman F, David JPR & Kudrawiec R (2015) . Semiconductor Science and Technology, 30(9), 094005-094005.
Richards RD, Bastiman F, Walker D, Beanland R & David JPR (2015) . Semiconductor Science and Technology, 30(9), 094013-094013.
Zhou Z, Mendes DF, Richards RD, Bastiman F & David JPR (2015) . Semiconductor Science and Technology, 30(9), 094004-094004.
Richards RD, Bastiman F, Roberts JS, Beanland R, Walker D & David JPR (2015) . Journal of Crystal Growth, 425, 237-240.
Jeng Shiuh Cheong , Hayat MM, Xinxin Zhou & David JPR (2015) . IEEE Transactions on Electron Devices, 62(6), 1946-1952.
Hobbs MJ, Tan CH, Zhou X, David JPR, Willmott JR, Plis E & Krishna S (2015) . IEEE Transactions on Instrumentation and Measurement, 64(2), 502-508.
Kudrawiec R, Kopaczek J, Polak MP, Scharoch P, Gladysiewicz M, Misiewicz J, Richards RD, Bastiman F & David JPR (2014) . Journal of Applied Physics, 116(23), 233508-233508.
Meng X, Tan CH, Dimler S, David JPR & Ng JS (2014) . Optics Express, 22(19), 22608-22615.
Singh R, O'Farrell T & David J (2014) . Journal of Lightwave Technology, 32(14), 2582-2592.
Mohmad AR, Bastiman F, Hunter CJ, Richards RD, Sweeney SJ, Ng JS, David JPR & Majlis BY (2014) . Physica Status Solidi (B) Basic Research, 251(6), 1276-1281.
Sandall IC, Bastiman F, White B, Richards R, Mendes D, David JPR & Tan CH (2014) . Applied Physics Letters, 104(17).
Cheong JS, Ong J, Ng JS, Krysa A & David JP (2014) . IEEE Journal of Selected Topics in Quantum Electronics, 20(6).
Gomes RB, Tan CH, Meng X, David JPR & Ng JS (2014) . Journal of Instrumentation, 9.
Richards RD, Bastiman F, Hunter CJ, Mendes DF, Mohmad AR, Roberts JS & David JPR (2014) . Journal of Crystal Growth, 390, 120-124.
Zhou X, Hobbs MJ, White BS, David JPR, Willmott JR & Tan CH (2014) . IEEE Transactions on Electron Devices, 61(3), 838-843.
Ong JSL, Ng JS, Krysa AB & David JPR (2014) . JOURNAL OF APPLIED PHYSICS, 115(6).
El-Howayek G, Zhang C, Li Y, Ng JS, David JPR & Hayat MM (2014) . IEEE PHOTONICS JOURNAL, 6(1).
Reyes DF, Bastiman F, Hunter CJ, Sales DL, Sanchez AM, David JPR & González D (2014) . Nanoscale Research Letters, 9(1), 1-8.
Dominguez L, Reyes DF, Bastiman F, Sales DL, Richards RD, Mendes D, David JPR & Gonzalez D (2013) . APPLIED PHYSICS EXPRESS, 6(11).
Tan SL, Soong WM, Green JE, Steer MJ, Zhang S, Tan LJJ, Ng JS, Marko IP, Sweeney SJ, Adams AR , Allam J et al (2013) . Applied Physics Letters, 103(10).
Sandall IC, Ng JS, David JPR, Liu H & Tan CH (2013) . Semiconductor Science and Technology, 28(9).
Reyes DF, Gonzalez D, Bastiman F, Dominguez L, Hunter CJ, Guerrero E, Roldan MA, Mayoral A, David JPR & Sales DL (2013) . APPLIED PHYSICS EXPRESS, 6(4).
Richards R, Bastiman F, Hunter CJ, Mohmad AR, David JPR & Ekins-Daukes N (2013) . Conference Record of the IEEE Photovoltaic Specialists Conference, 303-305.
Ker PJ, David JPR & Tan CH (2012) . Optics Express, 20(28), 29568-29576.
Green JE, David JPR & Tozer RC (2012) . Measurement Science and Technology, 23(12).
Green JE, Loh WS, Marshall ARJ, Ng BK, Tozer RC, David JPR, Soloviev SI & Sandvik PM (2012) . IEEE Transactions on Electron Devices, 59(4), 1030-1036.
Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2012) . IEEE Transactions on Electron Devices, 59(4), 1063-1067.
Marshall ARJ, Nunna K, Tan SL, Reyner CJ, Liang B, Jallipalli A, David JPR & Huffaker DL (2012) . Proceedings of SPIE - The International Society for Optical Engineering, 8541.
Hunter CJ, Bastiman F, Mohmad AR, Richards R, Ng JS, Sweeney SJ & David JPR (2012) . IEEE Photonics Technology Letters, 24(23), 2191-2194.
Tan SL, Hunter CJ, Zhang S, Tan LJJ, Goh YL, Ng JS, David JPR, Marko IP, Sweeney SJ, Adams AR & Allam J (2012) . Journal of Electronic Materials, 1-9.
Mohmad AR, Bastiman F, Hunter CJ, Richards R, Sweeney SJ, Ng JS & David JPR (2012) . Applied Physics Letters, 101(1).
Green JE, Tozer RC & David JPR (2012) . IEEE Transactions on Circuits and Systems.
Sandall I, Ng JS, David JPR, Tan CH, Wang T & Liu H (2012) . Optics Express, 20(10), 10446-10452.
Ivanov T, Donchev V, Germanova K, Tellaleva T, Borissov K, Hongpinyo V, Vines P, David JPR & Ooi BS (2012) . Journal of Physics: Conference Series, 356(1).
Green JE, Loh WS, Marshall ARJ, Ng BK, Tozer RC, David JPR, Soloviev SI & Sandvik PM (2012) Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement. IEEE Transactions on Electron Devices.
Bastiman F, Cullis AG, David JPR & Sweeney SJ (2012) . Journal of Crystal Growth, 341(1), 19-23.
Mohmad AR, Bastiman F, Ng JS, Sweeney SJ & David JPR (2012) . Physica Status Solidi (C) Current Topics in Solid State Physics, 9(2), 259-261.
Nunna KC, Tan SL, Reyner CJ, Marshall ARJ, Liang B, Jallipalli A, David JPR & Huffaker DL (2012) . IEEE Photonics Technology Letters, 24(3), 218-220.
Bastiman F, Cullis AG, David JPR & Sweeney SJ (2012) Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM. Journal of Crystal Growth.
Ker PJ, Marshall ARJ, David JPR & Tan CH (2012) . Physica Status Solidi (C) Current Topics in Solid State Physics, 9(2), 310-313.
Bastiman F, Mohmad ARB, Ng JS, David JPR & Sweeney SJ (2011) Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth. Journal of Crystal Growth.
Marshall ARJ, Ker PJ, Krysa A, David JPR & Tan CH (2011) . Opt Express, 19(23), 23341-23349.
Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2011) . IEEE J QUANTUM ELECT, 47(8), 1123-1128.
Mohmad AR, Bastiman F, Hunter CJ, Ng JS, Sweeney SJ & David JPR (2011) . APPL PHYS LETT, 99(4).
Tan SL, Zhang SY, Soong WM, Goh YL, Tan LJJ, Ng JS, David JPR, Marko IP, Adams AR, Sweeney SJ & Allam J (2011) . IEEE ELECTR DEVICE L, 32(7), 919-921.
Hasbullah NF, David JPR & Mowbray DJ (2011) . J APPL PHYS, 109(11).
Tan CH, Gomes RB, David JPR, Barnett AM, Bassford DJ, Lees JE & Ng JS (2011) . IEEE T ELECTRON DEV, 58(6), 1696-1701.
Marshall ARJ, Vines P, Ker PJ, David JPR & Tan CH (2011) . IEEE J QUANTUM ELECT, 47(6), 858-864.
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2011) . IEEE J QUANTUM ELECT, 47(5), 607-613.
Mohmad AR, Bastiman F, Ng JS, Sweeney SJ & David JPR (2011) . APPL PHYS LETT, 98(12).
Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, Babazadeh N, Gomes RB, Vines P, David JPR, McKeag RD & Boe D (2011) . Journal of Instrumentation, 6(12).
Gomes RB, Tan CH, Ker PJ, David JPR & Ng JS (2011) . Journal of Instrumentation, 6(12).
Hasbullah NF & David JPR (2011) . 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts, 32-35.
Ong JSL, Ng JS, Krysa AB & David JPR (2011) Impact Ionization Coefficients in Al0.52In0.48P. IEEE Electron Device Letters.
Ong JSL, Ng JS, Krysa AB & David JPR (2011) . IEEE Electron Device Letters, 32(11), 1528-1530.
Hasbullah NF, David JPR & Mowbray DJ (2011) . AIP Conference Proceedings, 1328, 136-138.
Tan CH, Vines P, Hobbs M, Anderson B, Hugues M & David J (2011) . Infrared Physics and Technology, 54(3), 228-232.
Ong DSG, Ng JS, Goh YL, Tan CH, Zhang S & David JPR (2011) . IEEE Transactions on Electron Devices, 58(2), 486-489.
Ong DSG, Hayat MM, David JPR & Ng JS (2011) . IEEE Photonics Technology Letters, 23(4), 233-235.
Tan LJJ, Soong WM, David JPR & Ng JS (2011) . IEEE Transactions on Electron Devices, 58(1), 103-106.
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2011) . IEEE Journal of Quantum Electronics, 47(2), 190-197.
Barnett AM, Bassford DJ, Lees JE, Ng JS, Tan CH & David JPR (2010) . NUCL INSTRUM METH A, 621(1-3), 453-455.
Tan LJJ, Ong DSG, Ng JS, Tan CH, Jones SK, Qian YH & David JPR (2010) . IEEE J QUANTUM ELECT, 46(8), 1153-1157.
Hasbullah NF, Hopkinson M, Alexander RR, Hogg RA, David JPR, Badcock TJ & Mowbray DJ (2010) . IEEE Journal of Quantum Electronics, 46(12), 1847-1853.
Marshall ARJ, David JPR & Tan CH (2010) . IEEE Transactions on Electron Devices, 57(10), 2631-2638.
Rees GJ & David JPR (2010) . Journal of Physics D: Applied Physics, 43(24).
Ong DSG, Ng JS, Hayat MM, Sun P & David JPR (2009) . J LIGHTWAVE TECHNOL, 27(15), 3294-3302.
Sanchez AM, Beanland R, Hasbullah NF, Hopkinson M & David JPR (2009) . J APPL PHYS, 106(2).
Marshall ARJ, Tan CH, Steer MJ & David JPR (2009) . IEEE PHOTONIC TECH L, 21(13), 866-868.
Mun SCLT, Tan CH, Dimler SJ, Tan LJJ, Ng JS, Goh YL & David JPR (2009) . IEEE J QUANTUM ELECT, 45(5-6), 566-571.
Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ & Mowbray DJ (2009) . IEEE J QUANTUM ELECT, 45(1-2), 79-85.
Loh WS, Goh EZJ, Vassilevski K, Nikitina I, David JPR, Wright NG & Johnson CM (2008) . Materials Research Society Symposium Proceedings, 1069, 245-250.
Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) . APPL PHYS LETT, 93(11).
Lees JE, Bassford DJ, Ng JS, Tan CH & David JPR (2008) . NUCL INSTRUM METH A, 594(2), 202-205.
Loh WS, Ng BK, Ng JS, Soloviev SI, Cha HY, Sandvik PM, Johnson CM & David JPR (2008) . IEEE T ELECTRON DEV, 55(8), 1984-1990.
David JPR & Tan CH (2008) . IEEE J SEL TOP QUANT, 14(4), 998-1009.
Mun SCLT, Tan CH, Goh YL, Marshall ARJ & David JPR (2008) . J APPL PHYS, 104(1).
Tan LJJ, Ng JS, Tan CH & David JPR (2008) . IEEE J QUANTUM ELECT, 44(3-4), 378-382.
Beanland R, David JPR & Sanchez AM (2008) . Journal of Applied Physics, 104(12).
Buller GS, Warburton RE, Pellegrini S, Ng JS, David JPR, Tan LJJ, Krysa AB & Cova S (2007) . IET OPTOELECTRONICS, 1(6), 249-254.
Groves C & David JPR (2007) . IEEE T COMMUN, 55(11), 2152-2158.
Aivaliotis P, Vukmirovic N, Zibik EA, Cockburn JW, Indjin D, Harrison P, Groves C, David JPR, Hopkinson M & Wilson LR (2007) . J PHYS D APPL PHYS, 40(18), 5537-5540.
Tan LJJ, Ng JS, Tan CH, Hopkinson M & David JPR (2007) . IEEE T ELECTRON DEV, 54(8), 2051-2054.
Dimler SJ, Ng JS, Tozer RC, Rees GJ & David JPR (2007) . IEEE J SEL TOP QUANT, 13(4), 919-925.
Tan CH, Ng JS, Rees GJ & David JPR (2007) . IEEE J SEL TOP QUANT, 13(4), 906-910.
Goh YL, Marshall ARJ, Massey DJ, Ng JS, Tan CH, Hopkinson M, David JPR, Jones SK, Button CC & Pinches SM (2007) . IEEE J QUANTUM ELECT, 43(5-6), 503-507.
Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ & Adams AR (2007) . J APPL PHYS, 101(6).
Lau KS, Tozer RC, David JPR, Hopkinson M, Rees GJ, Carr M, Priestley N, Teoh YP & Dunn GM (2007) . SEMICOND SCI TECH, 22(3), 245-248.
Ng JS, Tan CH, Rees GJ & David JPR (2007) . J MOD OPTIC, 54(2-3), 353-360.
Groves C & David JPR (2007) Effects of Ionization Velocity and Dead Space on Avalanche Photodiode Bit Error Rate.. IEEE Trans. Communications, 55, 2033-2033.
Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Ng WK, Rees GJ, Hopkinson A, David JPR & Jones SK (2007) . IEEE T ELECTRON DEV, 54(1), 11-16.
Groves C & David JPR (2006) . Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 859-860.
Ng JS, Liu HY, Steer MJ, Hopkinson M & David JPR (2006) . MICROELECTRONICS JOURNAL, 37(12), 1468-1470.
Lau KS, Tan CH, Ng BK, Li KF, Tozer RC, David JPR & Rees GJ (2006) . MEAS SCI TECHNOL, 17(7), 1941-1946.
Pellegrini S, Warburton RE, Tan LJJ, Ng JS, Krysa AB, Groom K, David JPR, Cova S, Robertson MJ & Buller GS (2006) . IEEE J QUANTUM ELECT, 42(3-4), 397-403.
Liu HY, Steer MJ, Badcock TJ, Mowbray DJ, Skolnick MS, Suarez F, Ng JS, Hopkinson M & David JPR (2006) . J APPL PHYS, 99(4).
Bai J, Wang T, Comming P, Parbrook PJ, David JPR & Cullis AG (2006) . J APPL PHYS, 99(2).
Massey DJ, David JPR & Rees GJ (2006) . IEEE Transactions on Electron Devices, 53(9), 2328-2334.
Goh YL, Ng JS, Tan CH, Ng WK & David JPR (2005) . IEEE PHOTONIC TECH L, 17(11), 2412-2414.
Ng JS, Tan CH, David JPR & Rees GJ (2005) . IEEE J QUANTUM ELECT, 41(8), 1092-1096.
Groves C, Tan CH, David JPR, Rees GJ & Hayat MM (2005) . IEEE T ELECTRON DEV, 52(7), 1527-1534.
Wang T, Raviprakash G, Ranalli F, Harrison CN, Bai J, David JPR, Parbrook PJ, Ao JP & Ohno Y (2005) . J APPL PHYS, 97(8).
Liu HY, Soong WM, Navaretti P, Hopkinson M & David JPR (2005) . APPL PHYS LETT, 86(6).
Massey DJ, David JPR & Rees GJ (2005) . Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, 2005, 245-248.
David JPR (2005) . Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2005, 369-370.
Groves C, Chia CK, Tozer RC, David JPR & Rees GJ (2005) . IEEE J QUANTUM ELECT, 41(1), 70-75.
Hogg R, Groom KM, Liu HY, Sellers IR, Ray SK, Badcock T, Gutierrez M, Hopkinson M, Ng JS, R. David JP , Mowbray DJ et al (2004) . Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Liu HY, Sellers IR, Gutierrez M, Groom KM, Soong WM, Hopkinson M, David JPR, Beanland R, Badcock TJ, Mowbray DJ & Skolnick MS (2004) . J APPL PHYS, 96(4), 1988-1992.
Liu HY, Sellers IR, Badcock TJ, Mowbray DJ, Skolnick MS, Groom KM, Gutierrez M, Hopkinson M, Ng JS, David JPR & Beanland R (2004) . APPL PHYS LETT, 85(5), 704-706.
Massey DJ, David JPR, Tan CH, Ng BK, Rees GJ, Robbins DJ & Herbert DC (2004) . J APPL PHYS, 95(10), 5931-5933.
Tan CH, Rees GJ, Houston PA, Ng JS, Ng WK & David JPR (2004) . APPL PHYS LETT, 84(13), 2322-2324.
Groves C, Harrison CN, David JPR & Rees GJ (2004) . Journal of Applied Physics, 96(9), 5017-5019.
Drouot V, Beanland R, Button CC, Wang XY, David JPR, Ouali FF & Holden AJ (2004) Establishing MOVPE growth of InAs/GaAs quantum dots in a commercial 8×3″ multiwafer reactor for optoelectronic applications. Design and Nature, 6, 107-110.
Groves C, David JPR, Rees GJ & Ong DS (2004) . Journal of Applied Physics, 95(11 I), 6245-6251.
Hambleton PJ, David JPR & Rees GJ (2004) . Journal of Applied Physics, 95(7), 3561-3564.
Groves C, David JPR, Robson PN & Rees GJ (2004) . Proceedings of SPIE - The International Society for Optical Engineering, 5451, 426-433.
Groves C, David JPR & Rees GJ (2004) Gain dependent avalanche duration and gain×bandwidth product in an avalanche photodiode. Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '04, 30-31.
Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS & David JPR (2003) . APPL PHYS LETT, 83(24), 4951-4953.
Ng WK, Tan CH, David JPR, Houston PA, Yee M & Ng JS (2003) . APPL PHYS LETT, 83(14), 2820-2822.
Yee M, Ng WK, David JPR, Houston PA, Tan CH & Krysa A (2003) . IEEE T ELECTRON DEV, 50(10), 2021-2026.
Chia CK, Ng BK, David JPR, Rees GJ, Tozer RC, Hopkinson M, Airey RJ & Robson PN (2003) . J APPL PHYS, 94(4), 2631-2637.
Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Zhao JH & Weiner M (2003) . IEEE T ELECTRON DEV, 50(8), 1724-1732.
Tan CH, Ghin R, David JPR, Rees GJ & Hopkinson M (2003) The effect of dead space on gain and excess noise in In0.48Ga0.52P p(+)in(+) diodes. SEMICOND SCI TECH, 18(8), 803-806.
Ng JS, Tan CH, David JPR, Hill G & Rees GJ (2003) . IEEE T ELECTRON DEV, 50(4), 901-905.
Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Qin C & Zhao JH (2003) . IEE PROCEEDINGS-OPTOELECTRONICS, 150(2), 187-190.
Yee M, Ng WK, David JPR, Houston PA & Harrison CN (2003) . APPL PHYS LETT, 82(8), 1224-1226.
Yan F, Qin C, Zhao JH, Bush M, Olsen G, Ng BK, David JPR, Tozer RC & Weiner M (2003) Demonstration of 4H-SiC avalanche photodiodes linear array. SOLID-STATE ELECTRONICS, 47(2), 241-245.
David J (2003) Low Noise Avalanche Photodiodes. Conference on Optical Fiber Communication, Technical Digest Series, 86, 336-337.
Harrison CN, David JPR, Groves C, Hopkinson M & Rees GJ (2003) Effect of temperature on the avalanche properties of sub-micron structures. Institute of Physics Conference Series, 174, 263-266.
Groves C, David JPR & Rees GJ (2003) . Semiconductor Science and Technology, 18(7), 689-692.
Rees GJ & David JPR (2003) . Proceedings of SPIE - The International Society for Optical Engineering, 4999, 349-362.
Groves C, Ghin R, David JPR & Rees GJ (2003) . IEEE Transactions on Electron Devices, 50(10), 2027-2031.
Hambleton PJ, Plimmer SA, David JPR & Rees GJ (2003) . IEE Proceedings: Optoelectronics, 150(2), 167-170.
Hambleton PJ, Ng BK, Plimmer SA, David JPR & Rees GJ (2003) . IEEE Transactions on Electron Devices, 50(2), 347-351.
Ong DS, Rees GJ & David JPR (2003) . Journal of Applied Physics, 93(7), 4232-4239.
Tan CH, Hambleton PJ, David JPR, Tozer RC & Rees GJ (2003) . J LIGHTWAVE TECHNOL, 21(1), 155-159.
Harrison CN, David JPR, Hopkinson M & Rees GJ (2002) . J APPL PHYS, 92(12), 7684-7686.
Ng BK, David JPR, Rees GJ, Tozer RC, Hopkinson M & Airey RJ (2002) . IEEE T ELECTRON DEV, 49(12), 2349-2351.
Ng JS, Tan CH, David JPR & Rees GJ (2002) A general method for estimating the duration of avalanche multiplication. SEMICOND SCI TECH, 17(10), 1067-1071.
Ng BK, Yan F, David JPR, Tozer RC, Rees GJ, Qin C & Zhao JH (2002) . IEEE PHOTONIC TECH L, 14(9), 1342-1344.
Ng JS, David JPR, Rees GJ & Allam J (2002) . J APPL PHYS, 91(8), 5200-5202.
Ng JS, Tan CH, Ng BK, Hambleton PJ, David JPR, Rees GJ, You AH & Ong DS (2002) Effect of dead space on avalanche speed. IEEE T ELECTRON DEV, 49(4), 544-549.
Ng BK, David JPR, Tozer RC, Hopkinson M, Hill G & Rees GJ (2002) Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes. IEEE PHOTONIC TECH L, 14(4), 522-524.
Yan F, Qin C, Zhao JH, Weiner M, Ng BK, David JPR & Tozer RC (2002) . ELECTRON LETT, 38(7), 335-336.
Yee M, Houston PA & David JPR (2002) Measurement of electron saturation velocity in Ga0.52In0.48P in a double heterojunction bipolar transistor. J APPL PHYS, 91(3), 1601-1605.
Jacob B, Robson PN, David JPR & Rees GJ (2002) . Journal of Applied Physics, 91(8), 5438-5441.
Hambleton PJ, Ng BK, Plimmer SA, David JPR & Rees GJ (2002) Non-equilibrium modelling of avalanche photodiode speed. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 490-491.
Hambleton PJ, Plimmer SA, David JPR, Rees GJ & Dunn GM (2002) . Journal of Applied Physics, 91(3), 2107-2111.
Ng BK, David JPR, Plimmer SA, Tozer RC, Rees GJ & Hopkinson M (2001) . IEE P-OPTOELECTRON, 148(5-6), 243-246.
Ng BK, David JPR, Plimmer SA, Rees GJ, Tozer RC, Hopkinson M & Hill G (2001) Avalanche multiplication characteristics of Al0.8Ga0.2As diodes. IEEE T ELECTRON DEV, 48(10), 2198-2204.
Tan CH, David JPR, Rees GJ, Tozer RC & Herbert DC (2001) Treatment of soft threshold in impact ionization. J APPL PHYS, 90(5), 2538-2543.
Jacob B, Robson PN, David JPR & Rees GJ (2001) Fokker-Planck model for nonlocal impact ionization in semiconductors. J APPL PHYS, 90(3), 1314-1317.
Tan CH, David JPR, Plimmer SA, Rees GJ, Tozer RC & Grey R (2001) Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE T ELECTRON DEV, 48(7), 1310-1317.
Toriz-Garcia JJ, Parbrook PJ, Wood DA & David JPR (2001) GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO, 131-136.
David JPR & Rees GJ (2001) Low noise avalanche photodiodes. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 693-694.
Plimmer SA, David JPR, Jacob B & Rees GJ (2001) . Journal of Applied Physics, 89(5), 2742-2751.
Ng BK, David JPR, Plimmer SA, Hopkinson M, Tozer RC & Rees GJ (2000) Impact ionization coefficients of Al0.8Ga0.2As. APPL PHYS LETT, 77(26), 4374-4376.
Chia CK, David JPR, Plimmer SA, Rees GJ, Grey R & Robson PN (2000) Avalanche multiplication in submicron AlxGa1-xAs/GaAs multilayer structures. J APPL PHYS, 88(5), 2601-2608.
Tan CH, Clark JC, David JPR, Rees GJ, Plimmer SA, Tozer RC, Herbert DC, Robbins DJ, Leong WY & Newey J (2000) Avalanche noise measurement in thin Si p(+)-i-n(+) diodes. APPL PHYS LETT, 76(26), 3926-3928.
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Plimmer SA, Chang KY & Roberts JS (2000) Avalanche noise characteristics of thin GaAs structures with distributed carrier generation. IEEE T ELECTRON DEV, 47(5), 910-914.
Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Finley JJ, Barker JA, O'Reilly EP, Wilson LR, Larkin IA, Maksym PA , Hopkinson M et al (2000) . Phys Rev Lett, 84(4), 733-736.
Plimmer SA, David JPR, Rees GJ & Robson PN (2000) . Semiconductor Science and Technology, 15(7), 692-699.
Ong DS, Li KF, Plimmer SA, Rees GJ, David JPR & Robson PN (2000) . Journal of Applied Physics, 87(11), 7885-7891.
Plimmer SA, David JPR & Ong DS (2000) . IEEE Transactions on Electron Devices, 47(5), 1080-1088.
Flimmer SA, David JPR, Grey R & Rees GJ (2000) . IEEE Transactions on Electron Devices, 47(5), 1089-1097.
Plimmer SA, Tan CH, David JPR, Grey R, Li KF & Rees GJ (1999) The effect of an electric-field gradient on avalanche noise. APPL PHYS LETT, 75(19), 2963-2965.
Li KF, Plimmer SA, David JPR, Tozer RC, Rees GJ, Robson PN, Button CC & Clark JC (1999) Low avalanche noise characteristics in thin InP p(+)-i-n(+) diodes with electron initiated multiplication. IEEE PHOTONIC TECH L, 11(3), 364-366.
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Robson PN & Grey R (1999) Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors. IEE P-OPTOELECTRON, 146(1), 21-24.
David JPR, Khoo EA, Pabla AS, Woodhead J, Grey R & Rees GJ (1999) . Proceedings of SPIE - The International Society for Optical Engineering, 3896, 163-170.
Dunn GM, Ghin R, Rees GJ, David JPR, Plimmer S & Herbert DC (1999) . Semiconductor Science and Technology, 14(11), 994-1000.
Khoo EA, Pabla AS, Woodhead J, David JPR, Grey R & Rees GJ (1999) . IEE Proceedings: Optoelectronics, 146(1), 62-66.
Khoo EA, Woodhead J, David JPR, Grey R & Rees GJ (1999) . Electronics Letters, 35(2), 150-152.
Flimmer SA, David JPR, Ong DS & Li KF (1999) . IEEE Transactions on Electron Devices, 46(4), 769-775.
Khoo EA, David JPR, Woodhead J, Grey R & Rees GJ (1999) . Applied Physics Letters, 75(13), 1929-1931.
Ghin R, David JPR, Plimmer SA, Hopkinson M, Rees GJ, Herbert DC & Wight DR (1998) Avalanche multiplication and breakdown in Ga0.52In0.48P diodes. IEEE T ELECTRON DEV, 45(10), 2096-2101.
Li KF, Ong DS, David JPR, Rees GJ, Tozer RC, Robson PN & Grey R (1998) Avalanche multiplication noise characteristics in thin GaAs p(+)-i-n(+) diodes. IEEE T ELECTRON DEV, 45(10), 2102-2107.
Flitcroft RM, David JPR, Houston PA & Button CC (1998) Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors. IEEE T ELECTRON DEV, 45(6), 1207-1212.
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Robson PN & Grey R (1998) Low excess noise characteristics in thin avalanche region GaAs diodes. ELECTRON LETT, 34(1), 125-126.
Ong DS, Li KF, Rees GJ, David JPR, Robson PN & Dunn GM (1998) . Applied Physics Letters, 72(2), 232-234.
Ong DS, Li KF, Rees GJ, Dunn GM, David JPR & Robson PN (1998) . IEEE Transactions on Electron Devices, 45(8), 1804-1810.
Roberts JS, David JPR, Smith L & Tihanyi PL (1998) . Journal of Crystal Growth, 195(1-4), 668-675.
Khoo EA, Woodhead J, David JPR, Pabla AS, Grey R & Rees GJ (1998) InGaAs/GaAs piezoelectric lasers. Conference on Lasers and Electro-Optics Europe - Technical Digest, 95.
Ong DS, Li KF, Rees GJ, David JPR & Robson PN (1998) . Journal of Applied Physics, 83(6), 3426-3428.
Chia CK, David JPR, Rees GJ, Plimmer SA, Grey R & Robson PN (1998) . Journal of Applied Physics, 84(8), 4363-4369.
Lye BC, Houston PA, Button CC & David JPR (1998) Electrical and optical characterisation of heavily doped GaAs : C bases of heterojunction bipolar transistors. SOLID STATE ELECTRON, 42(1), 115-120.
Yow HK, Houston PA, Button CC, David JPR & Ng CMS (1998) Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors. J ELECTRON MATER, 27(1), 17-23.
Lidzey DG, Bradley DDC, Pate MA, David JPR, Whittaker DM, Fisher TA & Skolnick MS (1997) Mapping the confined optical field in a microcavity via the emission from a conjugated polymer. APPL PHYS LETT, 71(6), 744-746.
Ghin R, David JPR, Hopkinson M, Pate MA, Rees GJ & Robson PN (1997) Impact ionization coefficients in GaInP p-i-n diodes. APPL PHYS LETT, 70(26), 3567-3569.
Wilson LR, Mowbray DJ, Skolnick MS, Astratov VN, Peggs DW, Rees GJ, David JPR, Grey R, Hill G & Pate MA (1997) Electrical and optical bistability in InxGa1-xAs-GaAs piezoelectric quantum wells. PHYS REV B, 55(24), 16045-16048.
Valtueña JF, Izpura I, Sánchez-Rojas JL, Muñoz E, Khoo EA, David JPR, Woodhead J, Grey R & Rees GJ (1997) . Microelectronics Journal, 28(8-10), 757-765.
Dunn GM, Rees GJ & David JPR (1997) . Semiconductor Science and Technology, 12(9), 1147-1153.
Dunn GM, Rees GJ & David JPR (1997) . Semiconductor Science and Technology, 12(6), 692-697.
Plimmer SA, David JPR & Dunn GM (1997) . IEEE Transactions on Electron Devices, 44(4), 659-663.
Khoo EA, Pabla AS, Woodhead J, David JPR, Grey R & Rees GJ (1997) . Electronics Letters, 33(11), 957-958.
Dunn GM, Rees GJ & David JPR (1997) . Electronics Letters, 33(4), 337-339.
Chen YH, Wilkinson CI, Woodhead J, David JPR, Button CC & Robson PN (1997) . IEEE Photonics Technology Letters, 9(2), 143-145.
Sale TE, Roberts JS, Woodhead J, David JPR & Robson PN (1997) . Journal of Crystal Growth, 170(1-4), 399-403.
Dunn GM, Rees GJ & David JPR (1997) . Electronics Letters, 33(7), 639-640.
Chen YH, Wilkinson CI, Woodhead J, David JPR, Button CC & Robson PN (1997) . Journal of Crystal Growth, 170(1-4), 394-398.
David JPR, Ghin R, Plimmer SA, Hopkinson M & Allam J (1997) Breakdown characteristics of (AlxGa1-x)0.52In0.48P p-i-n diodes. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 256-260.
Roberts JS, David JPR, Chen YH & Sale TE (1997) . Journal of Crystal Growth, 170(1-4), 621-625.
Dunn GM, Rees GJ, David JPR, Plimmer SA & Herbert DC (1997) . Semiconductor Science and Technology, 12(1), 111-120.
Chia CK, David JPR, Rees GJ, Robson PN, Plimmer SA & Grey R (1997) . Applied Physics Letters, 71(26), 3877-3879.
Plimmer SA, David JPR, Rees GJ, Grey R, Herbert DC, Wight DR & Higgs AW (1997) . Journal of Applied Physics, 82(3), 1231-1235.
Martin RW, McGow FJ, Hopkinson M & David JPR (1997) Investigation of band non-parabolicities in strain-balanced GaInAs/GaAlInAs coupled quantum wells. SUPERLATTICE MICROST, 22(4), 517-520.
Wilson LR, Mowbray DJ, Skolnick MS, Peggs DW, Rees GJ, David JPR, Grey R, Hill G & Pate MA (1997) Electrical and optical bistability in [111]GaInAs-GaAs piezo-electric quantum wells. SUPERLATTICE MICROST, 21(1), 113-118.
Plimmer SA, David JPR, Herbert DC, Lee TW, Rees GJ, Houston PA, Grey R, Robson PN, Higgs AW & Wight DR (1996) Investigation of impact ionization in thin GaAs diodes. IEEE T ELECTRON DEV, 43(7), 1066-1072.
Kowalski OP, Wegerer RM, Mowbray DJ, Skolnick MS, Button CC, Roberts JS, Hopkinson M, David JPR & Hill G (1996) Optical spectroscopic observation of spontaneous long range ordering in AlGaInP. APPL PHYS LETT, 68(23), 3266-3268.
David JPR, Sale TE, Pabla AS, RodriguezGirones PJ, Woodhead J, Grey R, Rees GJ, Robson PN, Skolnick MS & Hogg RA (1996) Excitation power and barrier width dependence of photoluminescence in piezoelectric multiquantum well p-i-n structures. APPL PHYS LETT, 68(6), 820-822.
Chen YH, Wilkinson CI, Woodhead J, Button CC, David JPR, Pate MA & Robson PN (1996) . Electronics Letters, 32(6), 559-560.
Sale TE, Roberts JS, Woodhead J, David JPR & Robson PN (1996) . IEEE Photonics Technology Letters, 8(4), 473-475.
Dunn GM, Rees GJ, David JPR, Plimmer SA & Herbert DC (1996) . IEEE Transactions on Electron Devices, 43(12), 2303-2305.
Mazzer M, Grünbaum E, Barnham KWJ, Barnes J, Griffin PR, Holt DB, Hutchison JL, Norman AG, David JPR, Roberts JS & Grey R (1996) . Materials Science and Engineering B, 42(1-3), 43-51.
Pabla AS, Woodhead J, Khoo EA, Grey R, David JPR & Rees GJ (1996) . Applied Physics Letters, 68(12), 1595-1597.
Griffin PR, Barnes J, Barnham KWJ, Haarpaintner G, Mazzer M, Zanotti-Fregonara C, Grünbaum E, Olson C, Rohr C, David JPR , Roberts JS et al (1996) . Journal of Applied Physics, 80(10), 5815-5820.
Kinder D, Nicholas RJ, Stavrinou PN, Haywood SK, Hart L, Hopkinson M, David JPR & Hill G (1996) Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields. SEMICOND SCI TECH, 11(1), 34-38.
Hopkinson M, David JPR, Khoo EA, Pabla AS, Woodhead J & Rees GJ (1995) InxGa1-xAs/InP quantum well structures grown on [111]B InP. MICROELECTR J, 26(8), 805-810.
Grey R, David JPR, Hill G, Pabla AS, Pate MA, Rees GJ, Robson PN, RodriguezGirones PJ, Sale TE, Woodhead J , Fisher TA et al (1995) Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices. MICROELECTR J, 26(8), 811-820.
DAVID JPR, HOPKINSON M, STAVRINOU PN & HAYWOOD SK (1995) GROWTH OF INASXP1-X/INP MULTIQUANTUM-WELL STRUCTURES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. J APPL PHYS, 78(5), 3330-3334.
Pabla AS, Woodhead J, Khoo EA, Grey R, David JPR & Rees GJ (1995) Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration. Applied Physics Letters, 1595.
David JPR, Allam J, Adams AR, Roberts JS, Grey R, Rees GJ & Robson PN (1995) . Applied Physics Letters, 2876.
Hopkinson M, David JPR, Khoo EA, Pabla AS, Woodhead J & Rees GJ (1995) InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 299-302.
David JPR, Chen YH, Grey R, Hill G, Robson PN & Kightley P (1995) . Applied Physics Letters, 67, 906.
ROBERTS JS & DAVID JPR (1994) HIGH-PURITY ALGAAS FROM METHYL-BASED PRECURSORS USING IN-SITU GETTERING OF ALKOXIDES. J CRYST GROWTH, 145(1-4), 968-969.
SALE TE, WOODHEAD J, REES GJ, GREY R, DAVID JPR, PABLA AS, RODRIGUEZGIRONES PJ, ROBSON PN, HOGG RA & SKOLNICK MS (1994) CARRIER SCREENING EFFECTS IN PIEZOELECTRIC STRAINED INGAAS/GAAS QUANTUM-WELLS GROWN ON THE [111]B AXIS. J APPL PHYS, 76(9), 5447-5452.
PABLA AS, HOPKINSON M, DAVID JPR, KHOO EA & REES GJ (1994) ELECTROABSORPTION MODULATION IN STRAINED PIEZOELECTRIC INGAAS/INP MULTIQUANTUM WELLS OPERATING AT LAMBDA-SIMILAR-OR-EQUAL-TO-1.55 MU-M. ELECTRON LETT, 30(20), 1707-1708.
DAVID JPR, GREY R, REES GJ, PABLA AS, SALE TE, WOODHEAD J, SANCHEZROJAS JL, PATE MA, HILL G, ROBSON PN , HOGG RA et al (1994) GROWTH AND CHARACTERIZATION OF (111)B INGAAS/GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES. J ELECTRON MATER, 23(9), 975-982.
MOWBRAY DJ, KOWALSKI OP, HOPKINSON M, SKOLNICK MS & DAVID JPR (1994) ELECTRONIC BAND-STRUCTURE OF ALGAINP GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 65(2), 213-215.
DAVID JPR, HOPKINSON M & PATE MA (1994) AVALANCHE BREAKDOWN IN (AL(X)GA(1X))0.52IN0.48P PIN JUNCTIONS. ELECTRON LETT, 30(11), 907-909.
MOWBRAY DJ, KOWALSKI OP, SKOLNICK MS, DELONG MC, HOPKINSON M, DAVID JPR & CULLIS AG (1994) SOLID-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAINP AND GAINP-CONTAINING QUANTUM-WELLS. J APPL PHYS, 75(4), 2029-2034.
WOODHEAD J, REDDY M & DAVID JPR (1994) ELECTROLUMINESCENCE FROM INGAAS/INALAS HEMTS. ELECTRON LETT, 30(14), 1181-1183.
Dunstan DJ, Kidd P, Fewster PF, Andrew NL, Grey R, David JPR, González L, González Y, Sacedón A & González-Sanz F (1994) . Applied Physics Letters, 65(7), 839-841.
Gilpérez JM, Sánchez-Rojas JL, Muñoz E, Calleja E, David JPR, Reddy M, Hill G & Sánchez-Dehesa J (1994) . Journal of Applied Physics, 76(10), 5931-5944.
David JPR, Hopkinson M, Ghin R & Pate MA (1994) Reverse breakdown characteristics in InGa(Al)P/InGaP p-i-n junctions. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 403-406.
Pabla AS, Woodhead J, Grey R, Rees GJ, David JPR, Pate MA & Robson PN (1994) . Electronics Letters, 30(18), 1521-1522.
Roberts JS, David JPR, Sale TE & Tihanyi PL (1994) . Journal of Crystal Growth, 143(3-4), 135-140.
MOWBRAY DJ, KOWALSKI OP, SKOLNICK MS, HOPKINSON M & DAVID JPR (1994) OPTICAL SPECTROSCOPY OF ALGAINP BASED WIDE-BAND GAP QUANTUM-WELLS. SUPERLATTICE MICROST, 15(3), 313-316.
Hogg RA, Fisher TA, Willcox AR, Whittaker DM, Skolnick MS, Mowbray DJ, David JP, Pabla AS, Rees GJ, Grey R , Woodhead J et al (1993) . Phys Rev B Condens Matter, 48(11), 8491-8494.
PABLA AS, SANCHEZROJAS JL, WOODHEAD J, GREY R, DAVID JPR, REES GJ, HILL G, PATE MA, ROBSON PN, HOGG RA , FISHER TA et al (1993) TAILORING OF INTERNAL FIELDS IN INGAAS/GAAS MULTIWELL STRUCTURES GROWN ON (111)B GAAS. APPL PHYS LETT, 63(6), 752-754.
DELONG MC, MOWBRAY DJ, HOGG RA, SKOLNICK MS, HOPKINSON M, DAVID JPR, TAYLOR PC, KURTZ SR & OLSON JM (1993) PHOTOLUMINESCENCE, PHOTOLUMINESCENCE EXCITATION, AND RESONANT RAMAN-SPECTROSCOPY OF DISORDERED AND ORDERED GA0.52IN0.48P. J APPL PHYS, 73(10), 5163-5172.
David JPR, Hopkinson M, Hill G, Stavrinou P & Haywood SK (1993) Growth and characterisation of InAsP/InP SQW and MQW PIN diode structures. 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials, 167-170.
COCKBURN JW, SKOLNICK MS, DAVID JPR, GREY R, HILL G & PATE MA (1992) DETERMINATION OF LOW-TEMPERATURE IMPACT IONIZATION COEFFICIENTS IN GAAS BY ELECTROLUMINESCENCE MEASUREMENTS ON SINGLE BARRIER TUNNELING STRUCTURES. APPL PHYS LETT, 61(7), 825-827.
HOPKINSON M, DAVID JPR, CLAXTON PA & KIGHTLEY P (1992) GROWTH OF STRAINED INAS/INP QUANTUM-WELLS BY MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 60(7), 841-843.
Roberts JS, Sale TE, Button CC, David JPR & Jennings A (1992) . Journal of Crystal Growth, 124(1-4), 792-800.
David JPR, Morley MJ, Wolstenholme AR, Grey R, Pate MA, Hill G, Rees GJ & Robson PN (1992) . Applied Physics Letters, 61(17), 2042-2044.
Gilpérez JM, Sánchez-Rojas JL, Muñoz E, Calleja E, David JPR, Hill G & Castagné J (1992) . Applied Physics Letters, 61(10), 1225-1227.
COCKBURN JW, SKOLNICK MS, DAVID JPR, GREY R, HILL G & PATE MA (1992) IMPACT IONIZATION AND ELECTROLUMINESCENCE IN SINGLE BARRIER TUNNELING STRUCTURES. SUPERLATTICE MICROST, 12(4), 443-446.
ROBERTS JS, SINGH KC, BUTTON CC, DAVID JPR & WOODHEAD J (1991) ALGAAS/GAAS P-MODFET MATERIALS GROWN USING INTRINSIC CARBON DOPING. JOURNAL OF CRYSTAL GROWTH, 107(1-4), 915-920.
David JPR, Grey R, Pate MA, Claxton PA & Woodhead J (1991) . Journal of Electronic Materials, 20(4), 295-297.
DAVID JPR, WOLSTENHOLME AR, CLAXTON PA, GREY R & WOODHEAD J (1990) LOW LEAKAGE INGAAS/GAAS STRAINED LAYER MQWPIN STRUCTURES. J ELECTRON MATER, 19(7), 56-56.
Pickin W & David JPR (1990) . Applied Physics Letters, 56(3), 268-270.
Woodhead J, Claxton PA, Grey R, Sale TE, David JPR, Liu L, Pate MA, Hill G & Robson PN (1990) . Electronics Letters, 26(25), 2117-2118.
Roberts JS, Button CC, David JPR, Jones AC & Rushworth SA (1990) . Journal of Crystal Growth, 104(4), 857-860.
PAPE IJ, WA PLK, ROBERTS DA, DAVID JPR, CLAXTON PA & ROBSON PN (1989) DISORDERING OF IN0.53GA0.47AS/INP MULTIPLE QUANTUM-WELLS BY SULFUR OR ZINC DIFFUSION AND PROTON-BOMBARDMENT. INST PHYS CONF SER(96), 397-400.
Grey R, David JPR, Claxton PA, Gonzalez Sanz F & Woodhead J (1989) . Journal of Applied Physics, 66(2), 975-977.
David JPR, Marsland JS & Roberts JS (1989) . IEEE Electron Device Letters, 10(7), 294-296.
ROBERTS JS, PATE MA, MISTRY P, DAVID JPR, FRANKS RB, WHITEHEAD M & PARRY G (1988) MOVPE GROWN MQW PIN DIODES FOR ELECTRO-OPTIC MODULATORS AND PHOTODIODES WITH ENHANCED ELECTRON IONIZATION COEFFICIENT. J CRYST GROWTH, 93(1-4), 877-884.
ROBERTS DA, DAVID JPR, HILL G, HOUSTON PA, PATE MA, ROBERTS JS & ROBSON PN (1988) GAAS/ALGAAS MULTIPLE QUANTUM WELL PIN DIODES GROWN BY SELECTIVE AREA EPITAXY. ELECTRON LETT, 24(14), 896-898.
Woodhead J, Gonzalez Sanz F, Claxton PA & David JPR (1988) . Semiconductor Science and Technology, 3(6), 601-604.
Li Kam Wa P, Robson PN, Roberts JS, Pate MA & David JPR (1988) . Applied Physics Letters, 52(24), 2013-2014.
Pape IJ, Li Kam Wa PLK, David JPR, Claxton PA, Robson PN & Sykes D (1988) . Electronics Letters, 24(15), 910-911.
Pape IJ, Wa PLK, David JPR, Claxton PA & Robson PN (1988) . Electronics Letters, 24(19), 1217-1218.
WHITEHEAD M, PARRY G, ROBERTS JS, MISTRY P, WA PLKM & DAVID JPR (1987) QUANTUM CONFINED STARK SHIFTS IN MOVPE-GROWN GAAS-ALGAAS MULTIPLE QUANTUM-WELLS. ELECTRON LETT, 23(20), 1048-1050.
CLAXTON PA, ROBERTS JS, DAVID JPR, SOTOMAYORTORRES CM, SKOLNICK MS, TAPSTER PR & NASH KJ (1987) GROWTH AND CHARACTERIZATION OF QUANTUM-WELLS AND SELECTIVELY DOPED HETEROSTRUCTURES OF INP/GA0.47IN0.53AS GROWN BY SOLID SOURCE MBE. J CRYST GROWTH, 81(1-4), 288-295.
WA PLK, ROBSON PN, DAVID JPR, HILL G, MISTRY P, PATE MA & ROBERTS JS (1986) ALL-OPTICAL SWITCHING EFFECTS IN A PASSIVE GAAS/GAALAS MULTIPLE-QUANTUM-WELL WAVE-GUIDE RESONATOR. ELECTRON LETT, 22(21), 1129-1130.
Wa PLK, Robson PN, David JPR, Hill G, Mistry P, Pate MA & Roberts JS (1986) NONLINEAR PROPERTIES OF GaAs/GaAlAs MULTI-QUANTUM-WELL OPTICAL WAVEGUIDES.. IEE Colloquium (Digest)(1986 /128).
Roberts JS, Claxton PA, David JPR & Marsh JH (1986) . Electronics Letters, 22(10), 506-507.
DAVID JPR (1985) IONIZATION COEFFICIENT IN GAAS, DOPING DEPENDENCE. IEE PROC-I, 132(1), 47-47.
David JPR, Marsland JS, Hall HY, Hill G, Mason NJ, Pate MA, Roberts JS, Robson PN, Sitch JE & Woods RC (1985) MEASURED IONIZATION COEFFICIENTS IN Ga//1// minus //xAl//xAs.. Institute of Physics Conference Series(74), 247-252.
DAVID JPR, SITCH JE & STERN MS (1982) GATE DRAIN AVALANCHE BREAKDOWN IN GAAS POWER MESFETS. IEEE T ELECTRON DEV, 29(10), 1548-1552.
Tao X, Jin X, Gao S, Yi X, Liu Y, Rockett TBO, Bailey NJ, Harun F, Adham NA, H Tan C , Richards RD et al () . ACS Photonics.
Jung H, Lee S, Jin X, Liu Y, Ronningen TJ, Grein CH, David JPR & Krishna S () . Communications Materials, 5(1).
Campbell JC, David JPR & Bank SR () . Photonics, 10(7), 715-715.
Harun F, Rusli JR, Richards RD, Abdul Rahman MG & David JPR () . Solid State Phenomena, 343, 99-104.
Lee HJ, Gamel MMA, Ker PJ, Jamaludin MZ, Wong YH & David JPR () . Journal of Electronic Materials.
Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS () Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors.

Chapters

Gu Y, Richards RD, David JPR & Zhang Y (2019) , Bismuth-Containing Alloys and Nanostructures (pp. 299-318). Springer Singapore
Drouot V, Beanland R, Button CC, Wang XY, David JPR, Ouali FF & Holden AJ (2018) , Microscopy of Semiconducting Materials 2003 (pp. 107-110).
Finley JJ & David JPR (2005) , Encyclopedia of Modern Optics (pp. 358-363). Elsevier
Allam J & David JPR (1996) , Hot Carriers in Semiconductors (pp. 343-346). Springer US
Cullis AG & Midgley PA () CRC Press

Conference proceedings papers

Modak M, Yi X, Saalbach L, Fleming F, Muir DAS, Mirza MMA, Kirdoda J, Dumas DCS, Smith C, McCarthy C , Mowbray H et al (2024) . Emerging Imaging and Sensing Technologies for Security and Defence IX (pp 17-17), 16 September 2024 - 20 September 2024.
Yi X, Saalbach L, Fleming F, Modak M, Muir D, Buller GS, Mirza MMA, Kirdoda J, Dumas DCS, Smith C , Coughlan C et al (2024) . Infrared Sensors, Devices, and Applications XIV (pp 12-12), 18 August 2024 - 23 August 2024.
Tan CH, Blain T, Cao Y, Taylor-Mew J, White B, Collins X, Ng JS & David J (2024) . Optical Sensing and Detection VIII, 7 April 2024 - 12 April 2024.
Tan CH, Blain T, Taylor-Mew J, Cao Y, White B, Collins X, Ng JS & David J (2024) . Infrared Technology and Applications L, 21 April 2024 - 26 April 2024.
Liu Y, Jin X, Lee S, Jung H, Lewis H, Guo B, Kodati S, Schawrtz M, Gerin C, Ronningen TJ , Campbell J et al (2024) . Optical Components and Materials XXI, 27 January 2024 - 1 February 2024.
Harun F, Richards RD & David JPR (2023) . 2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 28 August 2023 - 30 August 2023.
David JPR, Jin X, Lewis HIJ, Guo B, Lee S, Jung H, Kodati SH, Liang BL, Krishna S & Campbell JC (2022) . Emerging Imaging and Sensing Technologies for Security and Defence VII, 5 September 2022 - 8 September 2022.
Harun F, Richards RD & David JP (2022) . 2022 IEEE 8th International Conference on Smart Instrumentation, Measurement and Applications (ICSIMA), 26 September 2022 - 28 September 2022.
Rockett TB, Adham NA, Carr M, David JPR & Richards RD (2022) . Biomedical Spectroscopy, Microscopy, and Imaging II, 3 April 2022 - 23 May 2022.
Jin X, Guo B, Lewis H, Lee S, Liang B, Krishna S, Campbell J & David J (2022) . Optical Sensing and Detection VII, 3 April 2022 - 16 May 2022.
Jin X, Xie S, Liang BL, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker D, Tan CH , Ong DS et al (2022) . Optical Components and Materials XIX (pp 19)
Yi X, Xie S, Liang BL, Lim LW, Huffaker DL, Tan CH & David JPR (2020) . Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III, 21 September 2020 - 25 September 2020.
Hasanah L, Julian C, Mulyanti B, Aransa A, Sumatri R, Johari MH, David JPR & Mohmad AR (2020) . 2020 IEEE 8th International Conference on Photonics (ICP), 12 May 2020 - 30 June 2020.
Yi X, Xie S, Liang BL, Lim LW, Debnath MC, Huffaker DL, Tan CH & David JPR (2020) . Optical Components and Materials XVII, 1 February 2020 - 6 February 2020.
Mohmad AR & David JPK (2018) . 2018 IEEE International Conference on Semiconductor Electronics (ICSE), 15 August 2018 - 17 August 2018.
Singh R, Pergoloni S, O'Farrell T, Scarano G, David J, Biagi M & IEEE (2018) . 2017 IEEE GLOBECOM WORKSHOPS (GC WKSHPS)
Becker JJ, Xu X, Woods-Robinson R, Campbell CM, Lassise M, Ager J & Zhang Y-H (2017) . 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25 June 2017 - 30 June 2017.
Rockett TBO, Richards RD, Gu Y, Harun F, Liu Y, Zhou Z & David J (2017) . Journal of Crystal Growth, Vol. 477(Proceeding of the 19th International Conference on Molecular Beam Epitaxy) (pp 139-143). Le Corum - Montepllier, France, 4 September 2016 - 9 September 2016.
Tan CH, Ng JS, Zhou X, David J, Zhang S & Krysa A (2017) . Advanced Photon Counting Techniques XI
Ng JS, Zhou X, Auckloo A, White B, Zhang S, Krysa A, David JPR & Tan CH (2016) . Proceedings of SPIE, Vol. 9988, 26 September 2016 - 27 September 2016.
Richards RD, Harun F, Cheong JS, Mellor A, Hylton NP, Wilson T, Thomas T, Ekins-Daukes NJ & David JPR (2016) . 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 5 June 2016 - 10 June 2016.
Ker PJ, Marshall ARJ, Tan CH & David JPR (2016) . 2016 IEEE 6th International Conference on Photonics (ICP), 14 March 2016 - 16 March 2016.
Richards RD, Hunter CJ, Bastiman F, Mohmad AR & David JPR (2016) . IET Optoelectronics, Vol. 10(2) (pp 34-38)
Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) Al0.52In0.48P photodetectors for underwater communication systems. Asia Communications and Photonics Conference, ACPC 2015
Mohmad AR, Majlis BY, Bastiman F, Richards RD & David JPR (2015) . 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 19 August 2015 - 21 August 2015.
Singh R, O'Farrell T & David JPR (2015) . 2015 IEEE 26th Annual International Symposium on Personal, Indoor, and Mobile Radio Communications (PIMRC), 30 August 2015 - 2 September 2015.
Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) . Asia Communications and Photonics Conference 2015, 2015.
Cheong JS, Auckloo A, Ng JS, Krysa AB & David JPR (2015) . Unmanned/Unattended Sensors and Sensor Networks XI; and Advanced Free-Space Optical Communication Techniques and Applications
Singh R, O'Farrell T & David JPR (2015) . 2015 IEEE 81st Vehicular Technology Conference (VTC Spring), 11 May 2015 - 14 May 2015.
Auckloo A, Tozer R, David J & Tan CH (2014) . 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS), 7 December 2014 - 10 December 2014.
Hossain MM, Zarkesh-Ha P, David JPR & Hayat MM (2014) . 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
Sandall IC, Bastiman F, White B, Richards R, David J & Chee Hing Tan (2014) . 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
Cheong JS, Ong JSL, Ng JS, Krysa AB & David JPR (2014) . 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
Mohmad AR, Majlis BY, Bastiman F, Hunter CJ, Richards RD, Ng JS & David JPR (2014) . 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 27 August 2014 - 29 August 2014.
Sandall IC, Bastiman F, White B, Richards RD, David J & Tan CH (2014) . Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III
Singh R, O'Farrell T & David J (2013) Performance evaluation of IEEE 802.15.7 CSK physical layer. Globecom Workshops (GC Wkshps), 2013 IEEE
Ker PJ, Tan CH & David JPR (2013) . 4th International Conference on Photonics, ICP 2013 - Conference Proceeding (pp 78-80)
Cheong JS, Ong JSL, Ng JS, Krysa AB, Bastiman F & David JPR (2013) . EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
Hobbs MJ, Bastiman F, Tan CH, David JPR, Krishna S & Plis E (2013) . EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
Sandall IC, Ng JS, David JP, Tan CH, Wang T & Liu H (2012) . IEEE Photonics Conference 2012, 23 September 2012 - 27 September 2012.
Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2012) . Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012 (pp 220-221)
Tan SL, Soong WM, Steer MJ, Zhang S, Ng JS & David JPR (2012) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 8256
Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2011) . IEEE Nuclear Science Symposium Conference Record (pp 2238-2241)
Gomes RB, Ker PJ, Tan CH, David JPR & Ng JS (2011) . IEEE Nuclear Science Symposium Conference Record (pp 2071-2073)
Ng JS, Vines P, Gomes RB, Babazadeh N, Lees JE, David JPR & Tan CH (2011) . IEEE Nuclear Science Symposium Conference Record (pp 4809-4811)
Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, David JPR, Babazadeh N, Gomes RB, Vines P, McKeag RD & Boe D (2011) . IEEE Nuclear Science Symposium Conference Record (pp 4528-4531)
Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) . IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
Ker PJ, Marshall A, Gomes R, David JP, Ng JS & Tan CH (2011) . IEEE Photonic Society 24th Annual Meeting, 9 October 2011 - 13 October 2011.
Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
Goh YL, Tan SL, Zhang S, Ng JS & David JPR (2010) . 2010 Photonics Global Conference, PGC 2010
Tan CH, PVines , David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) . 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 706-707)
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) . INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2, Vol. 7660
Hayat MM, Ong DSG, David JPR & Ng JS (2010) . 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 126-127)
Tan SL, Goh YL, Das SD, Zhang S, Tan CH, David JPR, Gautam N, Kim H, Plis E & Krishna S (2010) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7838
Ng JS, Tan SL, Goh YL, Tan CH, David JPR, Allam J, Sweeney SJ & Adams AR (2010) . Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 187-190)
Ng JS, Tan CH & David JPR (2010) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7681
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2010) . Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 421-424)
Marshall ARJ, Vines P, Xie S, David JPR & Tan CH (2010) . Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 409-412)
Tan SL, Tan LJJ, Goh YL, Zhang S, Ng JS, David JPR, Marko IP, Allam J, Sweeney SJ & Adams AR (2010) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7726
Green JE, Loh WS, David JPR, Tozer RC, Soloviev SI & Sandvik PM (2010) . SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, Vol. 645-648 (pp 1081-1084)
Tan CH, Marshall A, Steer MJ & David JPR (2009) The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. PHOTON COUNTING APPLICATIONS, QUANTUM OPTICS, AND QUANTUM INFORMATION TRANSFER AND PROCESSING II, Vol. 7355
David JPR, Ng JS, Tan CH & Goh YL (2009) Extended Wavelength Avalanche Photodiodes. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 454-457)
Tan CH, Ng JS, Xie S & David JPR (2009) Potential Materials for Avalanche Photodiodes Operating above 10Gb/s. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 442-447)
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
Chee HT, Marshall A, Steer MJ & David JPR (2009) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7355
Ng JS, Tan CH & David JPR (2009) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7320
Marshall ARJ, Tan CH & David JPR (2009) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2009) Low Strain Multiple Stack Quantum Dot Infrared Photodetectors for Multispectral and High Resolution Hyperspectral Imaging. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 166-167)
Tan LJJ, Soong WS, Tan SL, Goh YL, Steer MJ, Ng JS, David JPR, Marko IP, Chamings J, Allam J , Sweeney SJ et al (2009) Dark current mechanisms in InxGa1-xAs1-yNy. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 233-234)
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) Type-II photodiode and APD for detection in the 2-2.5 mu m wavelength range. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 293-294)
Loh WS, David JPR, Ng BK, Soloviev SI, Sandvik PM, Ng JS & Johnson CM (2009) Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2008, Vol. 615-617 (pp 311-314)
Loh WS, David JPR, Soloviev SI, Cha HY, Sandvik PM, Ng JS & Johnson CM (2009) Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, Vol. 600-603 (pp 1207-1210)
David JPR (2008) . 2008 IEEE International Conference on Semiconductor Electronics, 25 November 2008 - 27 November 2008.
Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) . Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp 296-297)
Das SD, Goh YL, Tan CH, David JPR, Rodriguez JB, Plis EA, Sharma YD, Kim HS & Krishna S (2008) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2008) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
Ong DSG, Ng JS, David JPR, Hayat MM & Sun P (2008) OPTIMIZATION OF InP APDs FOR HIGH-SPEED LIGHTWAVE SYSTEMS. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 319-322)
Mun SCLT, Tan CH, Marshall ARJ, Goh YL, Tan LJJ & David JPR (2008) DESIGN CONSIDERATIONS FOR IN(0.52)AL(0.48)AS BASED AVALANCHE PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 331-333)
Soong WM, Ng JS, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ, Adams AR & Allam J (2008) DARK CURRENT MECHANISMS IN BULK GaInNAs PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 345-348)
Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ, Mowbray DJ, Sanchez AM & Beanland R (2008) Effects of spacer growth temperature on the optical properties of quantum dot laser structures - art. no. 68000U. DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV, Vol. 6800 (pp U8000-U8000)
Marshall ARJ, Tan CH, David JPR, Ng JS & Hopkinson M (2007) Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400)
Tan CH, Mun SCLT, Vines P, David JPR & Hopkinson M (2007) The effects of monolayer thickness and sheet doping density on dark current and noise current in Quantum Dot Infrared Photodetectors - art. no. 67400J. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp J7400-J7400)
Tan LJJ, Ng JS, Tan CH & David JPR (2007) Impact ionization of sub-micron InP structures. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 515-516)
Ng JS, Tan LJJ, Ong ASG, Tan CH & David JPR (2007) Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 513-514)
Loh WS, Johnson CM, Ng JS, Sandvik PM, Arthur SD, Soloviev SI & David JPR (2007) Determination of impact ionization coefficients measured from 4H-silicon carbide avalanche photodiodes. Silicon Carbide and Related Materials 2006, Vol. 556-557 (pp 339-342)
Tan CH, Goh YL, Marshall ARJ, Tan LJJ, Ng JS & David JPR (2007) Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 81-83)
Ong DSG, Ng JS, Tan LJJ, Tan CH & David JPR (2007) Temperature dependence of inp-based avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 296-298)
Goh YL, Ng JS, Tan CH, David JPR, Sidhu R, Holmes AL & Campbell JC (2007) InP-based avalanche photodiodes with > 2.1 mu m detection capability. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 293-295)
Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, ChamingS J, Adams AR, Sweeney SJ & Aiiam J (2007) Gainnas lattice-matched to GaAs for photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 347-349)
Ng JS, Tan CH & David JPR (2006) . IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194)
Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors. Optics InfoBase Conference Papers
Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Hopkinson M & David JPR (2006) Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788)
Marshall ARJ, Goh YL, Tan LJJ, Tan CH, Ng JS & David JPR (2006) A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 789-790)
Aivaliotis P, Zibik E, Wilson LR, David JPR, Hopkinson M & Groves C (2006) . Electro-Optical and Infrared Systems: Technology and Applications III, Vol. 6395 (pp U102-U110)
Liu HY, Sellers IR, Gutierrez M, Groom KM, Beanland R, Soong WM, Hopkinson M, David JPR, Badcock TJ, Mowbray DJ & Skolnick MS (2005) . MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 779-783)
David JPR (2005) Low noise avalanche photodiodes. 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) (pp 368-369)
Goh YL, Tan CH, Ng JS, Ng WK & David JPR (2005) Avalanche noise in In0.53Ga0.44As avalanching regions. 2005 International Conference on Indium Phosphide and Related Materials (pp 428-431)
Navaretti P, Liu H, Hopkinson M, Gutierrez M, David JPR, Hill G, Herrera M, Gonzalez D & Garcia R (2004) . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 301-304)
Sun HD, Clark AH, Calvez S, Dawson MD, Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS, David JPR , Gilet P et al (2004) . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 331-334)
Ng JS, Tan CH & David JPR (2004) . JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321)
Ng BK, David JPR, Soong WM, Ng JS, Tan CH, Liu HY, Hopkinson M & Robson PN (2004) . Device Research Conference - Conference Digest, DRC (pp 79-80)
Ng BK, David JPR, Massey DJ, Tozer RC, Rees GJ, Yan F, Zhao JH & Weiner M (2004) Avalanche multiplication and breakdown in 4H-SiC diodes. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, Vol. 457-460 (pp 1069-1072)
David JPR (2003) Physics & design of low noise avalanche photodiodes. CAOL '2003: PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, VOL 1 (pp 99-99)
David JPR (2003) Physics and design of low noise avalanche photodiodes - LEOS distinguished lecture 2003-2004. ICTON 2003: 5TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, PROCEEDINGS (pp 170-170)
Rees G & David J (2003) Lonisation dead space and the super-APD. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 995-996)
Harrison CN, David JPR, Groves C, Hopkinson M & Rees GJ (2003) Effect of temperature on the avalanche properties of sub-micron structures. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 263-266)
Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Qin C & Zhao JH (2003) High gain, low noise 4H-SiC UV avalanche photodiodes. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 355-358)
Ng JS, Yee MC, David JPR, Houston PA, Rees GJ & Hill G (2003) In0.53Ga0.47As ionization coefficients deduced from photomultiplication measurements. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 267-270)
Ng JS, Tan CH, David JAR & Rees GJ (2003) Theoretical study of breakdown probabilities in single photon avalanche diodes. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 773-774)
David J (2003) Low Noise Avalanche Photodiodes. Optics InfoBase Conference Papers (pp 19-20)
Groves C, Ghin R, Harrison CN, David JPR & Rees GJ (2002) Temperature dependence of avalanche multiplication in GaAs. EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 226-230)
Yee M, Ng WK, David JPR & Houston PA (2002) Temperature dependence of In0.53Ga0.47As ionisation coefficients. EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 316-320)
Ng JS, David JPR, Rees GJ, Pinches SM & Hill G (2001) . IEE P-OPTOELECTRON, Vol. 148(5-6) (pp 225-228)
Fry PW, Mowbray DJ, Itskevich IE, Skolnick MS, Barker JA, O'Reilly EP, Hopkinson M, Al-Khafaji M, David JPR, Cullis AG & Hill G (2001) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 497-502)
Toriz-Garcia JJ, Parbrook PJ, Wood DA & David JPR (2001) GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure. EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 131-136)
Ng BK, Ng JS, Hambleton PJ, David JPR, Ong DS, Rees GJ & Tozer RC (2001) Design considerations for high-speed low-noise avalanche photodiodes. DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II, Vol. 4594 (pp 1-9)
Ng BK, David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Hopkinson M (2001) Avalanche multiplication noise in bulk and thin AlxGa1-xAs (x=0-0.8) PIN and NIP diodes. PHOTODETECTORS: MATERIALS AND DEVICES VI, Vol. 4288 (pp 39-46)
Plimmer SA, Hambleton PJ, Ng BK, Dunn GM, Ng JS, David JPR & Rees GJ (2001) How avalanche pulses evolve in space and time. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX, Vol. 4283 (pp 511-518)
Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Barker JA, O'Reilly EP, Wilson LR, Maksym PA, Hopkinson M, Al-Khafaji M , David JPR et al (2000) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment. PHYSICA E, Vol. 7(3-4) (pp 408-412)
Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3953 (pp 95-102)
Tan CH, David JPR, Rees GJ, Tozer RC & Li KF (2000) Low avalanche excess noise in thin AlxGa1-xAs (x=0.15 and 0.60) avalanche photodiodes. 2000 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 34-38)
Ng BK, David JPR, Tozer RC, Rees GJ, Tan CH, Plimmer SA & Hopkinson M (2000) Low avalanche noise behaviour in bulk Al0.8Ga0.2As. 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 519-523)
Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. SILICON-BASED OPTOELECTRONICS II, Vol. 3953 (pp 95-102)
David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Robson PN (2000) Design of low-noise avalanche photodiodes. OPTOELECTRONIC INTEGRATED CIRCUITS IV, Vol. 3950 (pp 30-38)
Fry PW, Itskevich IE, Mowbray DJ, Sholnick MS, Barker JA, O'Reilly EP, Wilson LR, Larkin IA, Maksym PA, Hopkinson M , Al-Khafaji M et al (2000) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: Observation of a permanent dipole moment. SEMICONDUCTOR QUANTUM DOTS, Vol. 571 (pp 147-152)
Chia CK, David JPR, Rees GJ, Plimmer SA & Grey R (1999) . Design, Fabrication, and Characterization of Photonic Devices
Tan CH, Plimmer SA, David JPR, Rees GJ, Tozer RC, Clark J & Grey R (1999) Electric field gradient dependence of excess avalanche noise. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO (pp 230-235)
Tan CH, Li KF, Plimmer SA, David JPR, Rees GJ, Clark J & Button CC (1999) Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 295-298)
Ong DS, Li KF, Rees GJ, Dunn GM, David JPR & Robson PN (1998) Monte Carlo estimation of excess noise factor in thin p(+)-i-n(+) avalanche photodiodes. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 631-634)
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Button CC & Robson PN (1998) Low noise avalanche photodetectors. Conference on Lasers and Electro-Optics Europe - Technical Digest (pp 383)
Chia CK, David JPR, Rees GJ, Plimmer SA, Hopkinson M, Grey R & Robson PN (1998) Avalanche multiplication in sub-micron AlxGa1-xAs/GaAs heterostructures. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 391-394)
Flitcroft RM, Lye BC, Yow HK, Houston PA, Button CC & David JPR (1998) Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 435-438)
Flitcroft RM, Lye BC, Yow HK, Houston PA, Button CC & David JPR (1998) Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage. COMPOUND SEMICONDUCTORS 1997, Vol. 156 (pp 435-438)
Khoo EA, Woodhead J, David JPR, Pabla AS, Grey R & Rees GJ (1998) . Conference on Lasers and Electro-Optics-Europe, 1998.
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Button CC & Robson PN (1998) . Conference on Lasers and Electro-Optics-Europe, 1998.
Sale TE, Roberts JS, David JPR, Grey R & Robson PN (1997) . Fabrication, Testing, and Reliability of Semiconductor Lasers II
Hopkinson M & David JPR (1997) Incorporation of As-2 in InAsxP1-x and its application to InAsxP1-x/InP quantum well structures. JOURNAL OF CRYSTAL GROWTH, Vol. 175 (pp 1033-1038)
Ghin R, Dunn GM, Plimmer SA, David JPR, Rees GJ & Herbert DC (1997) Monte Carlo modelling of impact ionisation in GaAs. COMPOUND SEMICONDUCTORS 1996(155) (pp 629-632)
Dunn GM, Rees GJ & David JPR (1997) Monte Carlo simulation of impact ionization effects in MSM photodetectors and MESFET's.. COMPOUND SEMICONDUCTORS 1996(155) (pp 659-662)
Sale TE, Roberts JS, David JPR, Grey R, Woodhead J & Robson PN (1997) . Vertical-Cavity Surface-Emitting Lasers
Martin RW, McGow F, Hopkinson M & David JPR (1997) All-optical modulation near 1.55 mu m using In1-x-yGaxAlyAs coupled quantum wells. COMPOUND SEMICONDUCTORS 1996(155) (pp 539-542)
Ghin R, David JPR, Hopkinson M, Pate MA, Rees GJ, Robson PN, Herbert DC, Higgs AW & Wight DR (1997) Impact ionisation and temperature dependence of breakdown in Ga0.52In0.48P. COMPOUND SEMICONDUCTORS 1996(155) (pp 585-588)
Mowbray DJ, Kowalski OP, Cockburn JW, Skolnick MS, Hopkinson M & David JPR (1997) Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets. IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, Vol. 3001 (pp 135-146)
Li KF, Ong DS, David JPR, Robson PN, Tozer RC, Rees GJ & Grey R (1997) Avalanche photodiode (APD) noise dependence on avalanche region width. 55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997 (pp 170-171)
Flitcroft RM, Houston PA, Lye BC, Button CC & David JPR (1997) Breakdown behaviour in wide bandgap collector GaInP/GaAs double heterojunction bipolar transistors. EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 273-278)
David JPR, Ghin R, Hopkinson M, Pate MA & Robson PN (1996) Impact ionisation coefficients in (AlxGa1-x)(0.52)In0.48P. COMPOUND SEMICONDUCTORS 1995, Vol. 145 (pp 569-574)
David JPR, Ghin R, Plimmer SA, Hopkinson M & Allan J (1996) Breakdown characteristics of (AlXGa1-X)(0.52)In0.48P p-i-n diodes. ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 256-260)
Plimmer SA, David JPR, Lee TW, Rees GJ, Houston PA, Robson PN, Grey R, Herbert DC, Higgs AW & Wight DR (1996) Electron and hole multiplication characteristics in short GaAs PINs. COMPOUND SEMICONDUCTORS 1995, Vol. 145 (pp 563-568)
Plimmer SA, David JPR, Herbert DC, Rees GJ, Houston PA, Robson PN, Grey R, Pate MA, Higgs AW & Wight DR (1996) Multiplication characteristics of thin AlxGa1-xAs (x=0 to 0.3) diodes. 1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST (pp 44-45)
David JPR, Sale TE, Pabla AS, RodriquezGirones PJ, Woodhead J, Grey R, Rees GJ, Robson PN & Skolnick MS (1995) Photoluminescence of piezoelectric strained InGaAs-GaAs multi-quantum well p-i-n structures. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 35(1-3) (pp 42-46)
Chen YH, Woodhead J, David JPR, Button CC, Hopkinson M, Roberts JS, Sale TE & Robson PN (1995) Visible vertical cavity surface emitting lasers at lambda<650 nm. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 35(1-3) (pp 12-16)
Martin RW, McGow F, Hopkinson M & David JPR (1995) Exciton effects in strain-balanced GaInAs/AlInAs and GaInAs/GaInAs coupled quantum wells.. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, Vol. 17(11-12) (pp 1607-1612)
HOPKINSON M, DAVID JPR, KHOO EA, PABLA AS, WOODHEAD J & REES GJ (1995) InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates. SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS (pp 299-302)
Plimmer SA, David JPR, Lee TW, Rees GJ, Houston PA, Robson PN, Grey R, Herbert DC, Higgs AW & Wight DR (1995) Non-local effects on the multiplication characteristics of thin GaAs p-i-n and n-i-p diodes. 1995 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (EDMO) (pp 64-69)
FISHER TA, HOGG RA, WILLCOX ARK, WHITTAKER DM, SKOLNICK MS, MOWBRAY DJ, DAVID JPR, PABLA AS, REES GJ, GREY R , SANCHEZROJAS JL et al (1994) SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS/GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES. SOLID-STATE ELECTRONICS, Vol. 37(4-6) (pp 645-648)
Pabla AS, Woodhead J, Grey R, David JPR, Rees GJ, Pate MA & Robson PN (1994) . Integrated Photonics Research, 1994.
DAVID JPR, KIGHTLEY P, CHEN YH, GOH TS, GREY R, HILL G & ROBSON PN (1994) LEAKAGE CURRENT MECHANISMS IN STRAINED INGAAS/GAAS MQW STRUCTURES. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 373-378)
DAVID JPR, ALLAM J, ROBERTS JS, GREY R, REES G & ROBSON PN (1994) AVALANCHE BREAKDOWN IN GAAS/ALXGA1-XAS MULTILAYERS AND ALLOYS. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 721-726)
SANCHEZROJAS JL, MUNOZ E, PABLA AS, DAVID JPR, REES GJ, WOODHEAD J & ROBSON PN (1994) OPTOELECTRONIC EFFECTS AND FIELD DISTRIBUTION IN STRAINED (111)B INGAAS/ALGAAS MQW PIN DIODES. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 331-336)
DAVID JPR, HOPKINSON M, GHIN R & PATE MA (1994) REVERSE BREAKDOWN CHARACTERISTICS IN INGA(AL)P INGAP P-I-N JUNCTIONS. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 403-406)
HOPKINSON M, DAVID JPR, KOWALSKI OP, MOWBRAY DJ & SKOLNICK MS (1994) GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINP/ALGAINP QUANTUM-WELLS BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 551-554)
Pabla AS, Woodhead J, Grey R, David JPR, Rees GJ, Pate MA & Robson PN (1994) Demonstration of All-Optical Bistability in a Strained Piezoelectric Self Electro-optic Effect Device. Optics InfoBase Conference Papers (pp 260-262)
AARDVARK A, ALLOGHO GG, BOUGNOT G, DAVID JPR, GIANI A, HAYWOOD SK, HILL G, KLIPSTEIN PC, MANSOOR F, MASON NJ , NICHOLAS RJ et al (1993) DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 8(1) (pp S380-S385)
CLAXTON PA, HOPKINSON M, KOVAC J, HILL G, PATE MA & DAVID JPR (1991) QUANTUM-CONFINED STARK-EFFECT IN INGAAS/INP MULTIPLE QUANTUM-WELLS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. JOURNAL OF CRYSTAL GROWTH, Vol. 111(1-4) (pp 1080-1083)
PAPE IJ, WA PLK, ROBERTS DA, DAVID JPR, CLAXTON PA & ROBSON PN (1989) DISORDERING OF IN0.53GA0.47AS/INP MULTIPLE QUANTUM-WELLS BY SULFUR OR ZINC DIFFUSION AND PROTON-BOMBARDMENT. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 (pp 397-400)
Loh WS, Johnson CM, Ng JS, Sandvik P, Arthur S, Soloviev S & David JPR () (pp 339-342)
David JPR () . Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715)
David JPR, Ghin R, Plimmer SA, Rees GJ & Grey R () . HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)
Farley RJ, Haywood SK, Hewer VA, Hogg JHC, Stavrinou PN, Hopkinson M, David JPR & Pate M () . Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)
Guy P, Farley RJ, Haywood SK, Hewer VA, Hogg JHC, David JPR, Hopkinson M & Pate M () . Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials
Stavrinou PN, Haywood SK, Hart L, Hopkinson M, David JPR & Hill G () . Seventh International Conference on Indium Phosphide and Related Materials
Stavrinou P, Haywood SK, Hart L, Zhang X, Hopkinson M, David JPR & Hill G () . 1993 (5th) International Conference on Indium Phosphide and Related Materials
Stavrinou P, Haywood SK, Zhang X, Hopkinson M, Claxton PA, David JPR & Hill G () . LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
Hopkinson M, Claxton PA, David JPR, Hill G, Reddy M & Pate MA () . [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

Preprints

Jung H, Lee S, Jin X, Liu Y, Ronningen TJ, Grein CH, David JPR & Krishna S (2024) , arXiv.
Singh R, O'Farrell T, Bui TC, Biagi M & David JPR (2019) Performance Evaluation of Frequency Domain Equalisation Based Colour Shift Keying Modulation Schemes Over Diffuse Optical Wireless Channels, arXiv.
Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors, arXiv.
Pellegrini S, Warburton RE, Tan LJJ, Ng JS, Krysa AB, Groom K, David JPR, Cova S, Robertson MJ & Buller GS (2006) Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector, arXiv.
Gamel M, Ker PJ, Lee HJ, Rashid WESWA, Hannan MA, David J & Jamaludin MZ () , Research Square Platform LLC.

Research group: Materials and Devices

Teaching interests

EEE124 -Introduction to Energy
EEE225 - Analogue and Digital Electronics
EEE6216 -Energy Efficient Semiconductor Devices
MEC316 - Renewable Energy

Professional activities and memberships

Fellow of the IEEE
Fellow of the IET

91ֱ��

School of Electrical and Electronic Engineering

School of Electrical and Electronic Engineering

Professor John David

Journal articles

Chapters

Conference proceedings papers

Preprints

Links