@article{article, title  = {{Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes}},

 url = {{}},

 year = {{2005}},

 month = {{4}},

 author = {{Wang T and Raviprakash G and Ranalli F and Harrison CN and Bai J and David JPR and Parbrook PJ and Ao JP and Ohno Y}},

 doi = {{10.1063/1.1877816}},

 volume = {{97}},

 journal = {{J APPL PHYS}},

 issue = {{8}},

 note = {{Accessed on 2025/01/13}}}