TY  - JOUR

T1  - Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors

JO  - J ELECTRON MATER

PY  - 1998/01/01

AU  - Yow HK

AU  - Houston PA

AU  - Button CC

AU  - David JPR

AU  - Ng CMS

ED  - 

VL  - 27

IS  - 1

SP  - 17

EP  - 23

Y2  - 2025/01/13

ER  -