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Journal articles

• Du Y, Sankara Narayanan EM, Kawai H, Yagi S & Narui H (2024) . physica status solidi (a).
• Sheikhan A, Madathil SNE, Kawai H, Yagi S & Narui H (2023) . Japanese Journal of Applied Physics, 62.
• Sheikhan A, Narayanankutty G, Narayanan EMS, Kawai H, Yagi S & Narui H (2023) . Japanese Journal of Applied Physics, 62(3), 039401-039401.
• Luo P, Madathil S, Nishizawa S-I & Saito W (2020) . IEEE Transactions on Power Electronics.
• Luo P, Madathil S, Nishizawa S-I & Saito W (2020) . IEEE Transactions on Electron Devices.
• Kaminski N & Madathil S (2019) . IET Journal of Power Electronics, 12(15), 3859-3860.
• Luo P, Madathil SN & Long HY (2018) . IEEE Electron Device Letters, 39(9), 1350-1353.
• Unni V, Long HY, Yan H, Nakajima A, Kawai H & Sankara Narayanan EM (2018) . IET Power Electronics, 11(14), 2198-2203.
• Luo P, Long HY, Sweet MR, De Souza M & Madathil SNE (2018) . IEEE Transactions on Electron Devices, 65(4), 1440-1446.
• (2018) . IET Power Electronics, 11(4), 627-628.
• Amano H, Baines Y, Beam E, Borga M, Bouchet T, Chalker PR, Charles M, Chen KJ, Chowdhury N, Chu R , De Santi C et al (2018) . Journal of Physics D: Applied Physics, 51(16), 163001-163001.
• H Amano and Y Baines and E Beam and Matteo Borga and T Bouchet and Paul R Chalker and M Charles and Kevin J Chen and Nadim Chowdhury and Rongming Chu and Carlo De Santi and Maria Merlyne De Souza and Stefaan Decoutere and L Di Cioccio and Bernd Eckardt and Takashi Egawa and P Fay and Joseph J Freedsman and L Guido and Oliver H?berlen and Geoff Haynes and Thomas Heckel and Dilini Hemakumara and Peter Houston and Jie Hu and Mengyuan Hua and Qingyun Huang and Alex Huang and Sheng Jiang and H Kawai and Dan Kinzer and Martin Kuball and Ashwani Kumar and Kean Boon Lee and Xu Li and Denis Marcon and Martin M?rz and R McCarthy and Gaudenzio Meneghesso and Matteo Meneghini and E Morvan and A Nakajima and E M S Narayanan and Stephen Oliver and Tom¨¢s Palacios and Daniel Piedra and M Plissonnier and R Reddy and Min Sun and Iain Thayne and A Torres and Nicola Trivellin and V Unni and Michael J Uren and Marleen Van Hove and David J Wallis and J Wang and J Xie and S Yagi and Shu Yang and C Youtsey and Ruiyang Yu and Enrico Zanoni and Stefan Zeltner and Yuhao Zhang (2018) The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics, 51(16), 163001.
• Luo P, Sweet M & Ekkanath Madathil S (2017) . IET Power Electronics.
• Kawai H, Yagi S, Hirata S, Nakamura F, Saito T, Kamiyama Y, Yamamoto M, Amano H, Unni V & Narayanan EMS (2017) . Physica Status Solidi (A), 214(8).
• Baltynov T, Unni V & Narayanan EMS (2016) . Solid-State Electronics, 125, 111-117.
• ÕÑ ÖÐ, ÉìÒ» Î÷, ºëͨ ´ó, Ò»Éú Ͳ, Ñó ÑÒ, °îÖ® ½Ç, Õû Èô, Vineet U & Narayanan EMS (2016) , 199-199.
• Long H, Sweet M & Narayanan S (2016) . Facta universitatis - series: Electronics and Energetics, 29(1), 1-10.
• Zhu H, Sankara Narayanan EM & Sweet M (2015) . IET Power Electronics, 8(12), 2429-2434.
• Madathil SE (2015) . IET Power Electronics, 8(12), 2307-2307.
• Unni V, Kawai H & Narayanan EMS (2015) . Electronics Letters, 51(1), 108-110.
• Unni V, Kawai H & Narayanan EMS (2014) . Microelectronics Reliability, 54(9-10), 2242-2247.
• Balakrishnan M, Sweet MR & Narayanan EMS (2013) . IECON Proceedings (Industrial Electronics Conference), 544-548.
• Menon KG & Narayanan EMS (2012) . IEEE Transactions on Electron Devices.
• Luther-King N, Sweet M & Narayanan EMS (2012) . Ieee Transactions on Power Electronics, 27, 3072-3080.
• Long HY, Sweet MR & Narayanan EMS (2012) . IEEE Transactions on Electron Devices, 59(12), 3464-3469.
• Balachandran A, Sweet MR, Luther-King N, Narayanan EMS, Ray S, Quaresma H & Bruce J (2012) . IEEE Transactions on Electron Devices, 59(5), 1439-1444.
• Menon KG, Ngwendson L, Nakajima A, Sankara Narayanan EM & Bruce GP (2012) . Materials Science Forum, 717-720, 1139-1142.
• Long HY, Luther-King N, Sweet MR & Narayanan EMS (2012) . IEEE Transactions on Power Electronics, 27(5), 2673-2679.
• NAKAJIMA A, SUMIDA Y, YAGI S, KAWAI H, DHYANI MH & NARAYANAN EMS (2011) GaN power devices using the polarization junction concept. 늚Ýѧ»áÑо¿»áÙYÁÏ. SPC, °ëŒ§ÌåëŠÁ¦‰ä“QÑо¿»á, 2011(142), 1-6.
• NAKAJIMA A, SUMIDA Y, YAGI S, KAWAI H, DHYANI MH & NARAYANAN EMS (2011) GaN power devices using the polarization junction concept. 늚Ýѧ»áÑо¿»áÙYÁÏ. EDD, ëŠ×ӥǥХ¤¥¹Ñо¿»á, 2011(50), 1-6.
• Menon KG, Nakajima A, Ngwendson L & Narayanan EMS (2011) . IEEE ELECTR DEVICE L, 32(9), 1272-1274.
• Nakajima A, Sumida Y, Dhyani MH, Kawai H & Narayanan EM (2011) . IEEE Electron Device Letters, 32(4), 542-544.
• Luther-King N, Sankara Narayanan EM, Coulbeck L, Crane A & Dudley R (2010) . SPEEDAM 2010 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion, 545-550.
• Nakajima A, Sumida Y, Dhyani MH, Kawai H & Narayanan EMS (2010) . Applied Physics Express, 3(12).
• Luther-King N, Narayanan EMS, Coulbeck L, Crane A & Dudley R (2010) . IEEE Transactions on Power Electronics, 25(3), 583-591.
• Long H, Sweet MR, Ngwendson LK & Narayanan EMS (2010) . Japanese Journal of Applied Physics, 49(4 PART 2).
• Vershinin K, Moens P, Bauwens F, Narayanan EMS & Tack M (2009) . IEEE Electron Device Letters, 30(4), 416-418.
• Kong ST, Ngwendson LK, Sweet M, Kumar D & Sankara Narayanan EM (2009) . IEEE Transactions on Power Electronics, 24(4), 1100-1106.
• Nicholls JC, Sweet MR, Vershinin KV & Narayanan EMS (2007) . IEEE Transactions on Power Electronics, 22(4), 1177-1185.
• Green DW, Vershinin KV, Sweet M & Narayanan EMS (2007) . IEEE Transactions on Power Electronics, 22(5), 1857-1866.
• Hardikar S, Nicholls J, Green DW, Sweet M & Sankara Narayanan EM (2006) . IEE Proceedings: Circuits, Devices and Systems, 153(1), 67-72.
• Green DW & Sankara Narayanan EM (2006) Fully isolated high side and low side LIGBTs in junction isolation technology. Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2006.
• Hardikar S, Green DW & Narayanan EMS (2006) . IEEE Transactions on Electron Devices, 53(6), 1487-1490.
• Tadikonda R, Hardikar S, Green DW, Sweet M & Narayanan EMS (2006) . IEEE Transactions on Electron Devices, 53(7), 1740-1744.
• Cross RBM, De Souza MM & Sankara Narayanan EM (2005) . Nanotechnology, 16(10), 2188-2192.
• Luther-King N, Sweet M, Spulber O, Vershinin KV, De Souza MM & Narayanan EMS (2005) . IEEE Transactions on Electron Devices, 52(9), 2075-2080.
• Green DW, Hardikar S, Tadikonda R, Sweet M, Vershinin KV & Narayanan EMS (2005) . IEEE Transactions on Electron Devices, 52(7), 1672-1676.
• Green DW, Sweet M, Vershinin KV, Hardikar S & Narayanan EMS (2005) . IEEE Transactions on Electron Devices, 52(11), 2482-2488.
• Moguilnaia NA, Vershinin KV, Sweet MR, Spulber OI, De Souza MM & Narayanan EMS (2005) . IEEE Transactions on Engineering Management, 52(4), 429-439.
• Cross RBM, Oxley DP, Manhas M & Sankara Narayanan EM (2004) . Materials Research Society Symposium Proceedings, 808, 697-702.
• Benda V & Narayanan EMS (2004) Advances in power semiconductor devices.. Microelectron. J., 35, 223-223.
• Hardikar S, De Souza MM, Xu YZ, Pease TJ & Sankara Narayanan EM (2004) . Microelectronics Journal, 35(3), 305-310.
• Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM, Sankara-Narayanan EM, Flores D & Millan J (2004) . IEE Proceedings: Circuits, Devices and Systems, 151(3), 265-268.
• Sankara Narayanan EM, Spulber O, Sweet M, Bose JVSC, Verchinine K, Luther-King N, Moguilnaia N & De Souza MM (2004) . Microelectronics Journal, 35(3), 235-248.
• Udugampola UNK, McMahon RA, Udrea F, Sheng K, Amaratunga GAJ, Narayanan EMS, Hardikar S & De Souza MM (2004) . IEE Proceedings: Circuits, Devices and Systems, 151(3), 203-206.
• Tadikonda R, Hardikar S & Narayanan EMS (2004) . Solid-State Electronics, 48(9), 1655-1660.
• Cao G, Manhas SK, Narayanan EMS, De Souza MM & Hinchley D (2004) . IEEE Transactions on Electron Devices, 51(8), 1296-1303.
• Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM & Narayanan EMS (2004) . Solid-State Electronics, 48(12), 2207-2211.
• Hardikar S, Tadikonda R, Green DW, Vershinin KV & Narayanan EMS (2004) . IEEE Transactions on Electron Devices, 51(12), 2223-2228.
• Coconete DE, Moguilnaia NA, Cross RBM, De Souza PE & Sankara Narayanan EM (2003) Creativity - A Catalyst for Technological Innovation. IEEE International Engineering Management Conference, 291-295.
• Hardikar S, Tadikonda R, Sweet M, Vershinin K & Narayanan EMS (2003) . IEEE Electron Device Letters, 24(11), 701-703.
• Luo J, Cao G, Ekkanath Madathil SN & De Souza MM (2003) . Solid-State Electronics, 47(11), 1937-1941.
• Chichkine MP, De Souza MM & Sankara Narayanan EM (2002) . Phys Rev Lett, 88(8), 085501.
• Luther-King N, Sweet M, Spulber O, Vershinin K, De Souza MM & Sankara Narayanan EM (2002) . Solid-State Electronics, 46(6), 903-909.
• Roig J, Vellvehi M, Flores D, Rebollo J, Millan J, Krishnan S, De Souza MM & Sankara Narayanan EM (2002) . Solid-State Electronics, 46(2), 255-261.
• Xu YZ, Cross R, Manhas M, Clough FJ, Desouza MM, Narayanan EMS, Flores D, Rebello J, Vellvehi M & Millan J (2002) . Applied Physics Letters, 80(12), 2192-2194.
• Udrea F, Udugampola UNK, Sheng K, McMahon RA, Amaratunga GAJ, Narayanan EMS, De Souza MM & Hardikar S (2002) . IEEE Electron Device Letters, 23(12), 725-727.
• Luther-King N, Sweet M, Spulber O, Vershinin K, Ngw CK, Bose SC, De Souza MM & Sankara Narayanan EM (2001) . Solid-State Electronics, 45(1), 71-77.
• Souza MMD, Wang J, Manhas SK, Narayanan EMS & Oates AS (2001) A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors.. Microelectron. Reliab., 41, 169-177.
• Hardikar S, Xu YZ, De Souza MM & Sankara Narayanan EM (2001) . Solid-State Electronics, 45(7), 1055-1058.
• Hardikar S, Xu YZ, Cao GJ, De Souza MM & Sankara Narayanan EM (2001) . Microelectronics Journal, 32(2), 121-126.
• Ngw CK, Sweet M, Subhas Chandra Bose JV, Spulber O, Luther King N, Vershinin K, De Souza MM & Sankara Narayanan EM (2001) . Solid-State Electronics, 45(1), 127-132.
• De Souza MM, Chichkine MP & Sankara Narayanan EM (2001) . Physica B: Condensed Matter, 304(1-4), 483-488.
• Sweet M, Ngw CK, Spulber O, Ngwendson JVL, Vershinin KV, Bose SC, De Souza MM & Narayanan EMS (2001) . Microelectronics Journal, 32(5-6), 527-536.
• Bose JVSC, De Souza MM, Narayanan EMS, Ensell G, Pease TJ & Humphery J (2001) . Microelectronics Journal, 32(4), 323-326.
• Krishnan S, De Souza MM, Narayanan EMS, Vellvehi M, Roig J, Flores D, Rebollo J & Millan J (2001) . Microelectronics Journal, 32(5-6), 481-484.
• Spulber O, Sweet M, Vershinin K, Ngw CK, Ngwendson L, Bose JVSC, De Souza MM & Narayanan EMS (2000) A novel trench clustered insulated gate bipolar transistor (TCIGBT). IEEE ELECTR DEVICE L, 21(12), 613-615.
• De Souza MM, Subhas Chandra Bose JV, Sankara Narayanan EM, Pease TJ, Ensell G & Humphreys J (2000) . Solid-State Electronics, 44(8), 1381-1386.
• Qin Z, Sankara Narayanan EM & De Souza MM (2000) . Microelectronics Journal, 31(3), 175-185.
• Krishnan S, De Souza MM, Sankara Narayanan EM, Vellvehi M, Flores D, Rebollo J & Millan J (2000) . Electronics Letters, 36(14), 1242-1244.
• Hardikar S, Xu YZ, De Souza MM & Sankara Narayanan EM (2000) . Electronics Letters, 36(18), 1587-1589.
• Cao GJ, De Souza MM & Narayanan EMS (2000) . Solid-State Electronics, 44(10), 1869-1873.
• Hardikar S, Cao G, Xu Y, De Souza MM & Narayanan EMS (2000) . Solid-State Electronics, 44(7), 1213-1218.
• Pease TJ, Ekkanath-Madathil SN & Bayliss SC (2000) . Journal of Electronic Materials, 29(8), 1033-1037.
• Qin Z & Sankara Narayanan EM (1999) . International Journal of Electronics, 86(10), 1169-1178.
• Qin Z, Narayanan EMS & De Souza MM (1999) . Solid-State Electronics, 43(10), 1845-1853.
• De Souza MM, Ngw CK, Shishkin M & Narayanan EMS (1999) . Physical Review Letters, 83(9), 1799-1801.
• Spulber O, Sankara Narayanan EM, Hardikar S, De Souza MM, Sweet M & Subhas Chandra Bose JV (1999) . IEEE Electron Device Letters, 20(11), 580-582.
• Xu YZ, Clough FJ, Narayanan EMS, Chen Y & Milne WI (1999) . IEEE Electron Device Letters, 20(2), 80-82.
• Xu YZ, Hardikar S, De Souza MM, Cao GJ & Narayanan EMS (1999) . Electronics Letters, 35(21), 1880-1881.
• De Souza MM & Sankara Narayanan EM (1998) Self-diffusion in silicon. Defect and Diffusion Forum, 153-155, 69-80.
• Clough FJ, Sankara Narayanan EM, Chen Y, Eccleston W & Milne WI (1997) . Applied Physics Letters, 71(14), 2002-2004.
• Ekkanath-Madathil SN, De Souza MM & Qin Z (1997) . Solid State Phenomena, 55, 51-53.
• De Souza MM & Sankara Narayanan EM (1996) . Electronics Letters, 32(12), 1092-1093.
• Qin Z & Sankara Narayanan EM (1995) . Electronics Letters, 31(23), 2045-2047.
• Clough FJ, Brown AO, Madathil SNE & Milne WI (1995) . Thin Solid Films, 270(1-2), 517-521.
• Clough FJ, Brown AO, Ekkanath Madathil SN & Milne WI (1995) . Microelectronic Engineering, 28(1-4), 451-454.
• Chen W, Amaratunga GAJ, Narayanan EMS, Humphrey J & Evans AGR (1994) . IEEE Electron Device Letters, 15(11), 482-484.
• Sankara Narayanan EM, Amaratunga GAJ & Milne WI (1993) . IEEE Transactions on Electron Devices, 40(10), 1880-1883.
• Huang Q, Amaratunga GAJ, Humphrey J, Narayanan EMS, Milne WI & Starbuck CM (1992) . IEEE Electron Device Letters, 13(11), 575-577.
• Narayanan EMS, Amaratunga GAJ, Milne WI, Humphrey JI & Huang Q (1991) . IEEE Transactions on Electron Devices, 38(7), 1624-1632.
• Huang Q, Amaratunga GAJ, Narayanan EMS & Milne WI (1991) . IEEE Transactions on Electron Devices, 38(7), 1612-1618.
• Huang Q, Amaratunga GAJ, Narayanan EMS & Milne WI (1991) . Solid State Electronics, 34(9), 983-993.
• Huang Q, Amaratunga GAJ, Narayanan EMS & Milne WI (1990) . IEEE Journal of Solid-State Circuits, 25(2), 613-616.
• Sheikhan A & Narayanan EMS () . Micromachines, 15(11), 1337-1337.
• Du Y, Narayanan EMS, Kawai H, Yagi S & Narui H () . physica status solidi (a).
• Madathil S () Analysis of 1.2kV GaN polarisation superjunction diode surge current capability. Japanese Journal of Applied Physics.
• Madathil S () Investigation on Shift in Threshold Voltages of 1.2kV GaN Polarization Superjunction (PSJ) HFETs. IEEE Transactions on Electron Devices.
• Zuxin Qin & Sankara Narayanan EM () . 1999 Proceedings. 49th Electronic Components and Technology Conference (Cat. No.99CH36299).
• Madathil S & Luo P () Theoretical Analysis of On-state Performance Limit of 4H-SiC IGBT in Field-Stop Technology. IEEE Transactions on Electron Devices.
• Madathil S & Wang Z () Design of a Snubber Circuit for Low Voltage DC Solid-State Circuit Breakers. IET Power Electronics.
• Madathil S & Luo P () 3-D Scaling Rules for High Voltage Planar Clustered IGBTs. IEEE Transactions on Electron Devices.
• Tan Q & Madathil S () Evaluation of Gate Drive Circuit Effect in Cascode GaNFET-based Application. Bulletin of the Polish Academy of Sciences : Technical Sciences.
• Tan Q, Madathil S & Narayanankutty G () . IET Power Electronics.
• Madathil S, Yan H, Luo P, DU Y & Tan X () Analytical Modeling of Sheet Carrier Density and ON-Resistance in Polarization Super-Junction HFETs. IEEE Transactions on Electron Devices.
• Madathil S & Luo P () Investigation of Turn-on Performance in 1.2-kV MOS-Bipolar Devices. Japanese Journal of Applied Physics.

Conference proceedings papers

• Sheikhan A, Narayanan EMS, Kawai H, Yagi S & Narui H (2024) . PCIM Europe Conference Proceedings, Vol. 2024-June (pp 549-556)
• Sheikhan A & Sankara Narayanan EM (2024) . PCIM Europe Conference Proceedings, Vol. 2024-June (pp 2601-2606)
• Narayanan EMS (2023) . ISPS'23 Proceedings
• Tan X & Narayanan EMS (2023) . ISPS'23 Proceedings
• Sheikhan A & Narayanan EMS (2023) . ISPS'23 Proceedings
• Wang Z & Sankara Narayanan EM (2021) . IECON 2021 ¨C 47th Annual Conference of the IEEE Industrial Electronics Society, 13 October 2021 - 16 October 2021.
• Madathil SNE, Luo P, Saito W & Nishizawa S (2021) . Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials, 6 September 2021 - 9 September 2021.
• Luo P, Madathil SNE & de Souza P (2021) . Proceedings of 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia) (pp 1319-1324). Singapore, Singapore, 24 May 2021 - 27 May 2021.
• Tan Q & Madathil S (2021) . 2020 8th International Conference on Power Electronics Systems and Applications (PESA). Hong Kong, China, 7 December 2020 - 7 December 2020.
• Yan H & Narayanan EMS (2021) (pp 113-115)
• (2020) . 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 13 September 2020 - 18 September 2020.
• Luo P, Madathil SNE, Nishizawa S-I & Saito W (2020) . 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). Vienne, Austria, 13 September 2020 - 18 September 2020.
• Luo P, Madathil S, Nishizawa S-I & Wataru S (2020) . Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp 686-689). New Orleans, LA, USA, 15 March 2020 - 19 March 2020.
• Luo P, Madathil SNE, Nishizawa S-I & Saito W (2020) . Proceedings of 2019 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA, 9 December 2019 - 11 December 2019.
• Luo P, Ekkanath Madathil SN, Nishizawa SI & Saito W (2020) High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination. PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings (pp 176-180)
• Alwash M, Sweet M & Narayanan EMS (2017) . 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE), 19 June 2017 - 21 June 2017.
• Alwash M, Sweet M & Narayanan EMS (2017) . 2017 IEEE International Electric Machines and Drives Conference (IEMDC), 21 May 2017 - 24 May 2017.
• Luo P, Long HY, Sweet MR, De Souza MM & Narayanan EMS (2017) . 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE), 19 June 2017 - 21 June 2017.
• Long HY, Sweet MR, Narayanan EMS, Li G & IEEE (2017) Reliability Study and Modelling of IGBT Press-Pack Power Modules. 2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) (pp 2711-2717)
• Unni V & Narayanan EMS (2017) . Japanese Journal of Applied Physics, Vol. 56(4S), 26 September 2016 - 29 September 2016.
• Sweet MR, Narayanan EMS, Menon K & IEEE (2016) Impact of Poly-Crystalline Diamond within Power Semiconductor Device Modules in a Converter. 2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)
• Alwash M, Sweet M, Madathil E, Narayanan S & Bruce G (2016) . 2016 IEEE Energy Conversion Congress and Exposition (ECCE), 18 September 2016 - 22 September 2016.
• Sweet M, Sankara Narayanan EM & Steinhoff S (2016) . 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016)
• Long HY, Sweet MR, De Souza MM & Narayanan EMS (2015) . 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 10 May 2015 - 14 May 2015.
• Long HY, Sweet MR, De Souza MM & Narayanan EMS (2015) . 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 15 March 2015 - 19 March 2015.
• Baltynov T, Unni V & Narayanan EMS (2015) . 2015 45th European Solid State Device Research Conference (ESSDERC), 14 September 2015 - 18 September 2015.
• Narayanan EMS & Amaratunga G (2014) A study of fast switching, anode shorted lateral insulated gate bipolar transistor. European Solid-State Device Research Conference (pp 521-524)
• Balakrishnan M, Sweet MR & Narayanan EMS (2014) . 2014 International Symposium on Power Electronics, Electrical Drives, Automation and Motion, 18 June 2014 - 20 June 2014.
• Unni V, Long H, Sweet M, Balachandran A, Narayanan EMS, Nakajima A & Kawai H (2014) . 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 15 June 2014 - 19 June 2014.
• Balachandran A, Sweet M, Ngwendson L, Sankara Narayanan EM, Ray S, Quaresma H & Bruce J (2012) . Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 169-172)
• Nakajima A, Unni V, Menon KG, Dhyani MH, Sankara Narayanan EM, Sumida Y & Kawai H (2012) . Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 265-268)
• Luther-King N, Sweet M, Narayanan EMS & IEEE (2011) Evaluation of 1.2kV Super Junction Trench-Gate Clustered Insulated Gate Bipolar Transistor (SJ-TCIGBT). 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (pp 92-95)
• Nakajima A, Dhyani MH, Narayanan EMS, Sumida Y, Kawai H & IEEE (2011) GaN Based Super HFETs over 700V Using the Polarization Junction Concept. 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (pp 280-283)
• Dhyani MH, Green D, Sweet M, Narayanan EMS, Deane SC & Young ND (2009) . Technical Digest - International Electron Devices Meeting, IEDM
• Luther-King N, Sweet M & Sankara Narayanan EM (2009) . Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 164-167)
• Sweet M, Narayanan EMS, Vershinin K, Yip LJ, Moens P & Desoete B (2009) . Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 235-238)
• Ngwendson L, Sweet MR & Narayanan EMS (2009) . Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp 198-205)
• Moens P, Bauwens F, Desoete B, Baele J, Vershinin K, Ziad H, Narayanan EMS & Tack M (2008) . 2008 20th International Symposium on Power Semiconductor Devices and IC's, 18 May 2008 - 22 May 2008.
• Sweet M, Luther-King N, Kong ST, Sankara Narayanan EM, Bruce J & Ray S (2008) . Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 48-51)
• Kong ST, Ngwendson L, Sweet M & Narayanan EMS (2008) An Analysis on Turn-off Behaviour of 1.2kV NPT-CIGBT under Clamped Inductive Load Switching. 2008 13TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-5 (pp 43-47)
• Kong ST, Ngwendson L, Sweet M & Sankara Narayanan EM (2008) . Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 177-180)
• Moens P, Bauwens F, Desoete B, Baele J, Vershinin K, Ziad H, Shankara Narayanan EM & Tack M (2007) . Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 57-60)
• Narayanan EMS, Ramakrishna T & Green DW (2007) . Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 245-248)
• Kumar D, Sweet M, Vershinin K, Ngwendson L & Narayanan EMS (2007) RC-TCIGBT: A reverse conducting trench clustered IGBT. PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (pp 161-164)
• Moens P, Bauwens F, Baele J, Vershinin K, De Backer E, Narayanan EMS & Tack M (2006) . Technical Digest - International Electron Devices Meeting, IEDM
• Vershinin K, Sweet M, Ngwendson L & Narayanan EMS (2006) Influence of the device layout on the performance of 20A 1.2kV clustered insulated gate bipolar transistor (CIGBT) in PT technology. 2006 INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS, ELECTRICAL DRIVES, AUTOMATION AND MOTION, VOLS 1-3 (pp 275-278)
• Vershinin K, Sweet M, Ngwendson L, Thomson J, Waind P, Bruce J & Narayanan EMS (2006) Experimental demonstration of a 1.2kV trench clustered insulated gate bipolar transistor in non punch through technology. PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 185-188)
• Green DW, Hardikar S, Sweet M, Vershinin KV & Narayanan EMS (2005) Interaction between monolithically integrated JI-LIGBTs under clamped inductive switching. Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 119-122)
• Sweet MR, Nicholls J, Vershinin KV, Spulber O, Ngwendson L & Narayanan EMS (2005) Zero voltage switching of a 1200V PT clustered insulated gate bipolar transistor. PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 263-266)
• Green , Hardikar , Sweet , Vershinin , Tadikonda , De Souza & Narayanan (2004) . Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's, 27 May 2004 - 27 May 2004.
• Tadikonda R, Hardikar S & Narayanan EMS (2004) Potential of high-k dielectrics for lateral power and high voltage devices. Proceedings of the International Conference on Microelectronics, Vol. 24 I (pp 129-132)
• Vershinin K, Sweet M, Spulber O, Hardikar S, Luther-King N, De Souza MM, Sverdloff S, Narayanan EMS & Hinchley D (2004) . IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vol. 16 (pp 269-272)
• Cao G, Narayanan EMS, De Souza MM, Flores D, Vellvehi M, Hidalgo S, Millan J & Hinchley D (2004) . IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vol. 16 (pp 241-244)
• Coconete DE, Moguilnaia NA & Narayanan EMS (2004) Technology strategy - A powerful instrument to generate and sustain competitive advantage in power microelectronics. IEEE International Engineering Management Conference, Vol. 1 (pp 358-362)
• Spulber O, Sweet M, Vershinin K, Luther-King N, Sankara-Narayanan EM, De Souza MM, Flores D & Millan J (2003) 1.7kV NPT V-groove clustered IGBT - Fabrication and experimental demonstration. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 345-348)
• Moguilnaia N, Coconete D & Sankara Narayanan EM (2003) Human Aspect of Rapid Product Commercialization in Power Microelectronics. IEEE International Engineering Management Conference (pp 247-251)
• Luther-King N, Sweet M, Spulber O, Vershinin K, De Souza MM & Narayanan EMS (2003) Anode-gated MOS controlled thyristor with ultra-fast switching capability. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 299-302)
• Udugampola UNK, McMahon RA, Udrea F, Sheng K, Amaratunga GAJ, Narayanan EMS, Hardikar S & De Souza MM (2003) Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 216-219)
• Manhas M, Pease TJ, Cross R, Bose SC, Oxley DP, De Souza MM & Sankara Narayanan EM (2002) . Materials Research Society Symposium - Proceedings, Vol. 716 (pp 317-323)
• De Souza MM, Cao G, Sankara Narayanan EM, Youming F, Manhas SK, Luo J & Moguilnaia N (2002) . ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems
• Luo J, Cao G, Spulber O, Hardikar S, Feng YM, Narayanan EMS & De Souza MM (2002) Influence of physical parameters on the quasi-saturation of a power SOI RF LDMOS. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp 314-318)
• Hardikar S, De Souza MM & Sankara Narayanan EM (2002) Advances in devices and technologies for power and high voltage integrated circuits. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4746 I (pp 422-431)
• Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM & Sankara-Narayanan EM (2002) Overview of trench gated MOS-Controlled bipolar semiconductor power devices. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4746 I (pp 444-449)
• Udugampola UNK, Khoo GFW, Sheng K, McMahon RA, Udrea F, Amaratunga GAJ, Narayanan EMS, Hardikar S & De Souza MM (2002) . IEE Conference Publication(487) (pp 557-561)
• Moguilnaia NA, Vershinin KV, Sweet MR, Hardikar S, Ngwendson LK, Spulber O, Rouse MJ, De Souza MM & Narayanan EMS (2002) The investigation into the recent mergers and acquisitions in power semiconductor industry. IEEE International Engineering Management Conference, Vol. 2 (pp 826-830)
• Spulber O, De Souza MM, Sweet M, Subhas Chandra Bose JV & Sankara Narayanan EM (2001) . IEE Proceedings - Circuits, Devices and Systems, Vol. 148(2) (pp 79-79)
• Sweet M, Spulber O, Bose JVSC, Ngwendson L, Vershinin KV, De Souza MM & Narayanan EMS (2001) Clustered insulated gate bipolar transistor: a new power semiconductor device. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, Vol. 148(2) (pp 75-78)
• Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM & Narayanan EMS (2001) A novel, 1.2 kV trench clustered IGBT with ultra high performance. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 323-326)
• Narayanan EMS, Sweet M, Spulber O, De Souza MM & Bose SC (2000) Clustered IGBT - a new power semiconductor device. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3975
• Bose JVSC, De Souza MM, Sweet M, Spulber O & Narayanan EMS (2000) Novel area efficient edge termination technique for planar, MOS controlled power devices. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3975
• Krishnan S, De Souza MM, Sankara Narayanan EM, Vellveh¨ª M, Flores D, Rebollo J & Mill¨¢n J (2000) The radial confinement: A new approach to high voltage lateral power devices. Proceedings of the International Semiconductor Conference, CAS, Vol. 1 (pp 349-352)
• Sankara Narayanan EM, Sweet MR, Luther-King N, Vershinin K, Spulber O, De Souza MM & Subhas Chandra Bose JV (2000) A novel, clustered insulated gate bipolar transistor for high power applications. Proceedings of the International Semiconductor Conference, CAS, Vol. 1 (pp 173-181)
• De Souza MM, Chichkine MP & Narayanan EMS (2000) Self-interstitial clusters in silicon. Materials Research Society Symposium - Proceedings, Vol. 610
• Cao GJ, De Souza MM & Narayanan EMS (2000) Resurfed lateral bipolar transistors for high-voltage, High-frequency applications. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 185-187)
• Xu YZ, Clough FJ, Narayanan EMS & Cross R (2000) . Materials Research Society Symposium - Proceedings, Vol. 609
• Spulber O, Sweet M, Vershinin K, Ngw Y, Ngwendson L, Bose SCJV, De Souza MM & Narayanan EMS (2000) Influence of the N plus floating emitter on the on-state characteristics of the trench EST. 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS (pp 329-332)
• Spulber O, Narayanan EMS, De Souza MM, Sweet M, Hardikar S & Subhas Chandra Bose JV (1999) The trench planar insulated gate bipolar transistor (TPIGBT). IEE Colloquium (Digest)(104) (pp 75-79)
• Clough FJ, Xu YZ, Narayanan EMS & Cross R (1999) . Materials Research Society Symposium - Proceedings, Vol. 557 (pp 635-640)
• Aschenbeck J, Chen Y, Clough F, Xu YZ, Sankara Narayanan EM & Milne WI (1998) . MRS Proceedings, Vol. 508
• Aschenbeck J, Chen Y, Clough F, Xu YZ, Narayanan EMS & Milne WI (1998) . MRS Proceedings, Vol. 507
• Chen Y, Clough FJ, Sankara Narayanan EM, Xu YZ, Eccleston W & Milne WI (1997) . MRS Proceedings, Vol. 467
• Clough FJ, Chen Y, Brown AO, Sankara Narayanan EM & Milne WI (1995) Semi-insulating layer for novel high voltage polysilicon thin film transistors. Materials Research Society Symposium - Proceedings, Vol. 377 (pp 731-736)
• Narayanan EMS, Clough FJ & Milne WI (1995) (pp 605-608)
• Narayanan EMS & Amaratunga G (1995) A study of fast switching, anode shorted lateral insulated gate bipolar transistor. European Solid-State Device Research Conference (pp 521-524)
• Chen Y, Ekkanath Madathil SN, Clough FJ & Milne WI (1995) Influence of lattice temperature on SOI MOSFET's output characteristics. IEE Colloquium (Digest)(64)
• Long H, Sweet M, De Souza MM & Madathil () A New Generation of Clustered IGBT with High Ruggedness. PCIM. Shanghai, 25 June 2015 - 25 June 2015.
• Vershinin K, Sweet M, Ngwendson L, Thomson J, Waind P, Bruce J & Sankara Narayanan EM () . 2006 IEEE International Symposium on Power Semiconductor Devices & IC's
• Green DW & Sankara Narayanan EM () . 2006 IEEE International Symposium on Power Semiconductor Devices & IC's
• D. W. Green SH () . Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.
• Sheng K, Udugampola UNK, Khoo GFW, Udrea F, Amaratunga GAJ, McMahon RA, Narayanan EMS, De Souza MM & Hardikar S () . Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics
• Mugnier M, Manhas SK, Chandra Sekhar D, Krishnan S, Cross R, Sankara Narayanan EM, De Souza MM, Flores D, Vellvehi M & Millan J () . Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)
• Krishnan S, Sankara Narayanan EM, Xu YZ, Clough FJ, De Souza MM, Flores D, Vellvehi M & Millan J () . 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)
• Sankara Narayanan EM, Moguilnaia N, Vershinin K, Sweet M, Hardikar S, Ngwendson L, Spulber O & De Souza MM () . 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)
• Sweet M, Spulber O, Ngwendson L, Vershinin KV, De Souza MM & Sankara Narayanan EM () . 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)
• De Souza MM, Spulber O & Sankara Narayanan EM () . 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
• Manhas SK, de Souza MM, Gates AS, Chetlur SC & Sankara Narayanan EM () . 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)
• Hardikar S, Sankara Narayanan EM, De Souza MM, Huang AQ & Amaratunga G () . 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)
• Cao G, De Souza MM & Narayanan EMS () . CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)
• Spuiber O, De Souza MM, Narayanan EMS & Krishnan S () . CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)
• Bose JVSC, De Souza MM, Narayanan EMS, Spulber O & Sweet M () . CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)
• Spulber O, Narayanan EMS, De Souza MM, Sweet M, Bose JVSC & Hardikar JV () . CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)
• Xu YZ, Clough FJ, Narayanan EMS, Chen Y & Milne WI () . International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
• Sankara Narayanan EM, Qin Z, De Souza MM & Amaratunga G () . Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)
• Clough FJ, Chen Y, Narayanan EMS, Eccleston W & Milne WI () . Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's
• Zuxin Qin & Narayanan EMS () . Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's
• Zuxin Qin & Narayanan EMS () . Proceedings of Second International Conference on Power Electronics and Drive Systems
• Narayanan EMS & Amaratunga G () . Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95
• Narayanan EMS, Amaratunga G & Milne WI () . [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs
• Narayanan EMS, Amaratunga G & Milne WI () . Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics
• Sankara Narayanan EM, Amaratunga GAJ, Milne WI & Huang Q () . [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs
• Sankara Narayanan EM, Amaratunga GAJ, Milne WI & Huang Q () . [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs
• Huang Q, Sankara Narayanan EM, Kwan KW, Amaratunga G & Milne WI () . Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.
• Madathil SN () International Symposium on Power Semiconductors & ICs. International Symposium on Power Semiconductors and ICs

Preprints

• Sheikhan A & Ekkanath Madathil SN (2024) , MDPI AG.