TY  - CONF

T1  - Dynamic avalanche free design in 1.2kV Si-IGBTs for ultra high current density operation

JO  - Proceedings of 2019 IEEE International Electron Devices Meeting (IEDM)

UR  - http://eprints.whiterose.ac.uk/153668/

PY  - 2020/02/13

AU  - Luo P

AU  - Madathil SNE

AU  - Nishizawa S-I

AU  - Saito W

ED  - 

DO  - DOI: 10.1109/IEDM19573.2019.8993596

PB  - Institute of Electrical and Electronics Engineers

SN  - 9781728140339

Y2  - 2024/12/26

ER  -