@inproceedings{inproceedings, title  = {{Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology}},

 publisher = {{IEEE}},

 url = {{}},

 year = {{2006}},

 month = {{2}},

 author = {{Vershinin K and Sweet M and Ngwendson L and Thomson J and Waind P and Bruce J and Sankara Narayanan EM}},

 doi = {{10.1109/ispsd.2006.1666102}},

 journal = {{2006 IEEE International Symposium on Power Semiconductor Devices & IC's}},

 note = {{Accessed on 2024/12/26}}}