TY  - JOUR

T1  - Analysis of lateral IGBT with a variation in lateral doping drift region in junction isolation technology

JO  - IEEE Transactions on Electron Devices

PY  - 2006/01/01

AU  - Tadikonda R

AU  - Hardikar S

AU  - Green DW

AU  - Sweet M

AU  - Narayanan EMS

ED  - 

DO  - DOI: 10.1109/TED.2006.876276

VL  - 53

IS  - 7

SP  - 1740

EP  - 1744

Y2  - 2024/12/26

ER  -