Professor David Mowbray
School of Mathematical and Physical Sciences
Professor of Physics
+44 114 222 4561
Full contact details
School of Mathematical and Physical Sciences
E19
Hicks Building
Hounsfield Road
91Ö±²¥
S3 7RH
- Profile
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My research involves the application of a range of optical spectroscopic techniques to study physical processes in III-V semiconductors and related nanostructures and devices.
Particular interests are wide band gap materials (AlGaInP and (Al)InGaN) for visible and uv light emitters and quantum dots for high efficiency lasers and novel light emitters.
I was the first person to deduce the band structure of AlGaInP, a semiconductor now used as the basis for high efficiency red, orange and yellow LEDs and red lasers.
I have developed 1.3 um emitting lasers using InAs self-assembled quantum dots which exhibit extremely low operating currents and high temperature stability.
A recent project developed quantum dots lasers on Si substrates, providing the potential for the direct integration of III-V light emitters with Si CMOS electronics.
My current research is a joint project with colleagues at UCL and Warwick to grow and study quantum dots placed within quantum wires. This offers the prospect for high efficiency single photon sources and nanoscale lasers.
Career history
- PDRA Department of Physics, Oxford University 1987-1989
- Junior Research Fellow, Worcester College, Oxford University 1987-1989
- Alexander von Humboldt Fellow, Max Planck Institute, Stuttgart, Germany 1989-1990
- University Lecturer, Department of Physics, University of 91Ö±²¥ 1991-1997
- EPSRC Advanced Fellowship, Department of Physics, University of 91Ö±²¥, 1994-1999
- Reader in Physics, Department of Physics, University of 91Ö±²¥, 1997-2005
- Professor of Physics, Department of Physics, University of 91Ö±²¥ 2005-
- Qualifications
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- Physics BA (1981-1984, Hertford College, Oxford University)
- Physics DPhil (1984-1989, Hertford College, Oxford University)
- Research interests
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My recent research has focussed on the application of self-assembled quantum dots to produce high efficiency semiconductor lasers. Conventional semiconductor lasers have many desirable properties but their operating current (threshold current) can be high and this current typically increases rapidly with increasing temperature.
By using quantum dots as the light emitting region it is possible to reduce significantly both the operating current and the temperature sensitivity of this current.
By optimising the epitaxial growth myself and co-workers were able to produce InAs self-assembled quantum dots lasers emitting at 1.3 um with threshold current densities much smaller than comparable quantum well lasers and at the time the lowest ever reported. Later work applied p-type modulation doping to obtain high stability at room temperature.
More recently the ability of quantum dots to trap charges has been used to fabricated high performance lasers on Si substrates. Growth of III-V semiconductors on Si is very challenging as a large density of defects are produced at the Si / III-V interface.
These propagate to the light producing region of the device and significantly degrade its efficiency. By using quantum dots, which prevent carriers migrating to these defects, high light producing efficiency is possible.
Other work has used the capping of InAs quantum dots with a thin GaAsSb layer to extend the emission wavelength out to the main telecommunications band at 1.55 um.
My current work focuses on the study of a new type of quantum dot. These are grown within long nanowires that form from small holes made in an inert layer on a semiconductor substrate or metallic particles deposited on a semiconductor surface.
Unlike self-assembled quantum dots, which form at random position, these nanowire quantum dots can be made to form at pre-definied positions.
In addition there is considerably more control over their shape and size and it is possible to form stacks with a large number of identical dots, allowing the formation of nanoscale lasers.
The nanowire may act as an optical cavity to give very high light extraction for optical emitters. This project is a collaboration with University College London and the University of Warwick.
- Publications
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Show: Featured publications All publications
Featured publications
Journal articles
- . Nano Letters, 21(13), 5722-5729.
- . Nano Letters, 19(6), 4158-4165.
- . ACS Nano, 13(5), 5931-5938.
- . ACS Photonics, 4(7), 1740-1746.
- . PHYS REV B, 80(16).
- . APPL PHYS LETT, 90(11).
- . ELECTRON LETT, 42(16), 922-923.
- . APPL PHYS LETT, 88(8).
- . ELECTRON LETT, 40(22), 1412-1413.
- . APPL PHYS LETT, 85(5), 704-706.
- Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot. PHYS REV B, 63(16).
- Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots. PHYS REV B, 6307(7).
- . Phys Rev Lett, 84(4), 733-736.
- GALNP-ALGALNP BAND OFFSETS DETERMINED FROM HYDROSTATIC-PRESSURE MEASUREMENTS. APPL PHYS LETT, 66(5), 619-621.
- ELECTRONIC BAND-STRUCTURE OF ALGAINP GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 65(2), 213-215.
- . Physical Review B, 43(2), 1598-1603.
- . Physical Review Letters, 58(20), 2130-2133.
All publications
Journal articles
- . Nano Letters, 21(13), 5722-5729.
- . Nano Letters, 19(6), 4158-4165.
- . ACS Nano, 13(5), 5931-5938.
- . Nano Letters, 18(7), 4206-4213.
- . ACS Photonics, 4(7), 1740-1746.
- . IEEE Journal of Selected Topics in Quantum Electronics, 23(6), 1-8.
- . Optics Express, 24(6), 6196-6202.
- . Applied Physics Letters, 101(23).
- . PHYSICAL REVIEW B, 85(3).
- Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems. Physical Review B - Condensed Matter and Materials Physics, 85(3).
- . Journal of Applied Physics, 112(3).
- . J APPL PHYS, 109(11).
- . AIP Conference Proceedings, 1328, 136-138.
- . APPL PHYS LETT, 96(25).
- . Journal of Physics: Conference Series, 245, 012065-012065.
- . IEEE Journal of Quantum Electronics, 46(12), 1847-1853.
- . APPL PHYS LETT, 95(17).
- . PHYS REV B, 80(16).
- . APPL PHYS LETT, 95(11).
- . APPL PHYS LETT, 95(10).
- . J APPL PHYS, 105(5).
- . Physica Status Solidi (C) Current Topics in Solid State Physics, 6(SUPPL. 2).
- . IEEE J QUANTUM ELECT, 45(1-2), 79-85.
- . APPL PHYS LETT, 93(10).
- . J APPL PHYS, 104(5).
- . APPL PHYS LETT, 92(25).
- . 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08, 111-112.
- . J APPL PHYS, 103(1).
- . IEEE J QUANTUM ELECT, 43(11-12), 1129-1139.
- . J CRYST GROWTH, 307(2), 363-366.
- . IEEE J SEL TOP QUANT, 13(5), 1261-1266.
- . APPL PHYS LETT, 91(9).
- . PHYS REV B, 76(8).
- . APPL PHYS LETT, 91(2).
- . ELECTRON LETT, 43(12), 670-672.
- . APPL PHYS LETT, 90(21).
- . APPL PHYS LETT, 90(11).
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
- Systematic study of the effects of δ-p-doping on 1.3μm dot-in-well lasers. Optics InfoBase Conference Papers.
- . Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 435-436.
- . PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 244(1), 82-86.
- . IEEE J QUANTUM ELECT, 42(11-12), 1259-1265.
- . APPL PHYS LETT, 89(15).
- . APPL PHYS LETT, 89(7).
- . APPL PHYS LETT, 89(7).
- . ELECTRON LETT, 42(16), 922-923.
- . IEEE PHOTONIC TECH L, 18(13-16), 1557-1559.
- . PHYS REV B, 73(16).
- . APPL PHYS LETT, 88(13).
- . APPL PHYS LETT, 88(11).
- . APPL PHYS LETT, 88(11).
- . IEEE PHOTONIC TECH L, 18(5-8), 965-967.
- . APPL PHYS LETT, 88(8).
- . J APPL PHYS, 99(4).
- Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures. Optics InfoBase Conference Papers.
- . Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006.
- . Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006.
- . Conference Digest - IEEE International Semiconductor Laser Conference, 155-156.
- Maximising the gain and minimising the non-radiative recombination in 1.3μm quantum dot lasers. Conference Digest - IEEE International Semiconductor Laser Conference, 75-76.
- . APPL PHYS LETT, 87(23).
- . J APPL PHYS, 98(8).
- . IEEE PHOTONIC TECH L, 17(10), 2011-2013.
- . IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 11(5), 1041-1047.
- . IEEE PHOTONIC TECH L, 17(9), 1785-1787.
- . J PHYS D APPL PHYS, 38(13), 2059-2076.
- Quantum-dot lasers close in on their quantum-well rivals. Laser Focus World, 41(6), 157-159.
- . IEEE PHOTONIC TECH L, 17(6), 1139-1141.
- . APPL PHYS LETT, 86(14).
- . JPN J APPL PHYS 1, 44(4B), 2520-2522.
- . APPL PHYS LETT, 86(1).
- Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures. Optics InfoBase Conference Papers.
- Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures. Optics InfoBase Conference Papers.
- . 2005 European Quantum Electronics Conference, EQEC '05, 2005, 20.
- Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures. Quantum Electronics and Laser Science Conference (QELS), 3, 1938-1940.
- . PHYS REV B, 70(19).
- . PHYS REV B, 70(20).
- . ELECTRON LETT, 40(22), 1412-1413.
- . APPL PHYS LETT, 85(12), 2226-2228.
- . Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
- . J APPL PHYS, 96(4), 1988-1992.
- . APPL PHYS LETT, 85(5), 704-706.
- . Phys Rev Lett, 93(5), 057401.
- . APPL PHYS LETT, 84(16), 3052-3054.
- . PHYS REV B, 69(15).
- . ANNU REV MATER RES, 34, 181-218.
- . APPL PHYS LETT, 83(23), 4710-4712.
- . PHYS REV B, 68(23).
- . APPL PHYS LETT, 83(18), 3716-3718.
- . J APPL PHYS, 93(6), 3524-3528.
- . J APPL PHYS, 93(5), 2931-2936.
- . APPL PHYS LETT, 81(22), 4118-4120.
- . PHYS REV B, 66(15).
- . PHYS REV B, 66(4).
- . APPL PHYS LETT, 81(1), 1-3.
- . APPL PHYS LETT, 80(20), 3769-3771.
- Influence of GaN barrier growth temperature on the photoluminescence of InGaN/GaN heterostructures. J PHYS D APPL PHYS, 35(7), 599-603.
- . Applied Physics Letters, 80(20), 3769-3771.
- Staircase-like dynamics of stimulated emission in InAs quantum dot amplifiers. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, 74, 178-179.
- Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots. J APPL PHYS, 90(12), 6374-6378.
- . IEE P-OPTOELECTRON, 148(5-6), 238-242.
- Electrically pumped InGaAs quantum dot ring and cylindrical cavity lasers. ELECTRON LETT, 37(20), 1220-1222.
- Intensity noise in quantum-dot laser diodes. APPL PHYS LETT, 78(23), 3577-3579.
- Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot. PHYS REV B, 63(16).
- Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots. PHYS REV B, 63(16).
- Optical spectroscopic study of carrier processes in self-assembled In(Ga)As-Ga(Al)As quantum dot lasers. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 224(1), 123-127.
- Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots. PHYS REV B, 6307(7).
- Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots. APPL PHYS LETT, 77(26), 4344-4346.
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYS REV B, 62(24), 16784-16791.
- . Physics World, 13(7), 27-28.
- Electronic structure of InAs-GaAs self-assembled quantum dots studied by perturbation spectroscopy. PHYSICA E, 6(1-4), 348-357.
- . Phys Rev Lett, 84(4), 733-736.
- . Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088).
- Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers. J APPL PHYS, 87(1), 615-617.
- Gain characteristics of InAs/GaAs self-organized quantum-dot lasers. APPL PHYS LETT, 75(22), 3512-3514.
- Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots. J APPL PHYS, 86(5), 2555-2561.
- Excited states and selection rules in self-assembled InAs/GaAs quantum dots. PHYS REV B, 60(4), R2185-R2188.
- . Physics and Simulation of Optoelectronic Devices VII.
- Observation of wire width fluctuations in the optical spectra of GaAs-AlGaAs V-groove quantum wires. APPL PHYS LETT, 73(23), 3420-3422.
- Nanostructure of ordering variants in (AlxGa1-x)(0.52)In0.48P grown on different vicinal GaAs substrates. APPL PHYS LETT, 73(12), 1679-1681.
- Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers. APPL PHYS LETT, 73(7), 969-971.
- Stimulated emission from localized states in partially ordered (AlxGa1-x)(0.52)In0.48P. APPL PHYS LETT, 72(7), 821-823.
- Optical properties of (AlxGa1-x)(0.52)In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor. J APPL PHYS, 83(4), 2241-2249.
- Magneto-optical studies of self-organized InAs/GaAs quantum dots. PHYS REV B, 57(4), R2073-R2076.
- In- and out-going resonant Raman scattering from the cavity polaritons of semiconductor quantum microcavities. PHYS REV B, 56(19), 12429-12433.
- Polarization-dependent phenomena in the reflectivity spectra of semiconductor quantum microcavities. PHYS REV B, 56(16), 10032-10035.
- Electrical and optical bistability in InxGa1-xAs-GaAs piezoelectric quantum wells. PHYS REV B, 55(24), 16045-16048.
- Emission mechanisms and band filling effects in GaAs-AlGaAs V-groove quantum wires. APPL PHYS LETT, 70(8), 993-995.
- Electrical and optical bistability in [111]GaInAs-GaAs piezo-electric quantum wells. SUPERLATTICE MICROST, 21(1), 113-118.
- . Phys Rev B Condens Matter, 54(24), 17738-17744.
- . Phys Rev B Condens Matter, 54(7), 4472-4475.
- Optical spectroscopic observation of spontaneous long range ordering in AlGaInP. APPL PHYS LETT, 68(23), 3266-3268.
- . Phys Rev B Condens Matter, 53(16), 10830-10836.
- Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices. MICROELECTR J, 26(8), 811-820.
- . Phys Rev B Condens Matter, 52(20), 14340-14343.
- BAND-GAP OF COMPLETELY DISORDERED GA0.52IN0.48P. APPL PHYS LETT, 66(23), 3185-3187.
- GALNP-ALGALNP BAND OFFSETS DETERMINED FROM HYDROSTATIC-PRESSURE MEASUREMENTS. APPL PHYS LETT, 66(5), 619-621.
- . Phys Rev B Condens Matter, 50(15), 11190-11191.
- OPTICAL AND ELECTRICAL INVESTIGATION OF AN ASYMMETRIC STRAINED-LAYER DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE. SEMICOND SCI TECH, 9(9), 1608-1615.
- GROWTH AND CHARACTERIZATION OF (111)B INGAAS/GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES. J ELECTRON MATER, 23(9), 975-982.
- ELECTRONIC BAND-STRUCTURE OF ALGAINP GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 65(2), 213-215.
- . Phys Rev B Condens Matter, 49(16), 11173-11184.
- SOLID-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAINP AND GAINP-CONTAINING QUANTUM-WELLS. J APPL PHYS, 75(4), 2029-2034.
- INDIRECT EXCITON ABSORPTION AND RAMAN-SCATTERING IN GAAS-ALGAAS SUPERLATTICES. SUPERLATTICE MICROST, 15(3), 317-320.
- MAGNETOOPTICAL STUDIES OF BALLISTIC ELECTRON-TRANSPORT IN SINGLE BARRIER HETEROSTRUCTURES. SUPERLATTICE MICROST, 15(4), 373-376.
- OPTICAL SPECTROSCOPY OF ALGAINP BASED WIDE-BAND GAP QUANTUM-WELLS. SUPERLATTICE MICROST, 15(3), 313-316.
- . Phys Rev B Condens Matter, 48(11), 8491-8494.
- TAILORING OF INTERNAL FIELDS IN INGAAS/GAAS MULTIWELL STRUCTURES GROWN ON (111)B GAAS. APPL PHYS LETT, 63(6), 752-754.
- PHOTOLUMINESCENCE, PHOTOLUMINESCENCE EXCITATION, AND RESONANT RAMAN-SPECTROSCOPY OF DISORDERED AND ORDERED GA0.52IN0.48P. J APPL PHYS, 73(10), 5163-5172.
- . Phys Rev B Condens Matter, 47(11), 6823-6826.
- . Phys Rev B Condens Matter, 46(11), 7232-7235.
- . Journal of Applied Physics, 69(2), 786-792.
- . Solid State Communications, 79(3), 223-226.
- . Journal of Luminescence, 48-49, 755-758.
- . Semiconductor Science and Technology, 5(1), 83-89.
- . Journal of Molecular Structure, 219, 107-110.
- . Journal of Non-Crystalline Solids, 122(1), 1-9.
- . Journal of Luminescence, 44(4-6), 315-346.
- . Journal of Physics C: Solid State Physics, 21(31), L1065-L1068.
- ELECTRIC-FIELD-DEPENDENT PHOTOCONDUCTIVITY IN GAINAS-INP QUANTUM WELLS. APPL PHYS LETT, 53(9), 752-754.
- . Superlattices and Microstructures, 4(4-5), 551-552.
- . Semiconductor Science and Technology, 2(12), 822-827.
- . Le Journal de Physique Colloques, 48(C5).
- . Superlattices and Microstructures, 3(5), 471-475.
- . Superlattices and Microstructures, 3(1), 83-87.
- . Applied Physics Letters, 51(1), 24-26.
- . Nano Letters.
- . The Journal of Physical Chemistry C.
- . 2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666).
- . Physical Review B, 43(2), 1598-1603.
- . Physical Review B, 43(11), 9152-9157.
- . Physical Review B, 43(14), 11815-11824.
- . Physical Review Letters, 58(20), 2130-2133.
- . Physical Review B, 35(11), 5925-5928.
Chapters
Conference proceedings papers
- . Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII, 1 February 2020 - 6 February 2020.
- Strain balancing of MOVPE InAs/GaAs quantum dots using GaAs0.8P0.2. International Semiconductor Laser Conference (ISLC)
- . Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII
- . Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII
- . Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII
- . MICROELECTRONICS JOURNAL, Vol. 40(3) (pp 533-536)
- . OPTICAL AND QUANTUM ELECTRONICS, Vol. 40(14-15) (pp 1143-1148)
- . Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- . Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6909
- Effects of spacer growth temperature on the optical properties of quantum dot laser structures - art. no. 68000U. DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV, Vol. 6800 (pp U8000-U8000)
- . SUPERLATTICES AND MICROSTRUCTURES, Vol. 41(5-6) (pp 419-424)
- . JOURNAL OF APPLIED PHYSICS, Vol. 101(8)
- . Conference on Lasers and Electro-Optics, 2007, CLEO 2007
- . AIP Conference Proceedings, Vol. 893 (pp 909-910)
- . Conference on Lasers and Electro-Optics Europe - Technical Digest
- Photon Coupling Mechanism in 1.3-mu m Quantum-Dot Lasers. 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 (pp 2340-2341)
- . International Journal of Nanoscience, Vol. 06(03n04) (pp 291-296)
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6468
- Systematic study of the effects of modulation p-doping on 1.3 mu m InAs/GaAs dot-in-well lasers. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 517-520)
- . Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, Vol. 6471 (pp J4710-J4710)
- Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots. Physics of Semiconductors, Pts A and B, Vol. 893 (pp 951-952)
- . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 153(6) (pp 280-283)
- . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 153(6) (pp 316-320)
- . PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 243(7) (pp 1643-1646)
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6133
- 1.3 mu m emitting, self assembled quantum dot lasers. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 867-867)
- . Semiconductor Lasers and Laser Dynamics II, Vol. 6184 (pp 18417-18417)
- . PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, Vol. 3(6) (pp 1958-1961)
- . MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 779-783)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 129-132)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 302-307)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 382-385)
- . Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2005 (pp 402-403)
- . Novel In-Plane Semiconductor Lasers IV, Vol. 5738 (pp 332-346)
- Physics and applications of self-assembled semiconductor quantum dots. Physics of Semiconductors, Pts A and B, Vol. 772 (pp 50-55)
- Growth and characterization of 1.3 mu m multi-layer quantum dots lasers incorporating high growth temperature spacer layers. Physics of Semiconductors, Pts A and B, Vol. 772 (pp 1547-1548)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21(2-4) (pp 155-163)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21(2-4) (pp 199-203)
- . Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, 2004.
- Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers. Conference Digest - IEEE International Semiconductor Laser Conference (pp 57-58)
- Long-lived spin coherence and temperature-induced dephasing in InAs quantum dots measured via quantum beats. OSA Trends in Optics and Photonics Series, Vol. 97 (pp 667-668)
- Optimization of gain in multilayer GaInP quantum dots. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2 (pp 695-696)
- Improved gain and loss performance of 1.3 mu m quantum dot lasers using high growth temperature GaAs Spacer layer. 2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 212-213)
- . ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, Vol. 5352 (pp 348-354)
- . PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 240(2) (pp 364-367)
- . MICROELECTRONICS JOURNAL, Vol. 34(5-8) (pp 667-669)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 17(1-4) (pp 37-39)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 17(1-4) (pp 109-110)
- Optical properties of single charge tuneable InGaAs quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 13(2-4) (pp 127-130)
- Optical characterisation of AlGaN epitaxial layers and GaN/AlGaN quantum wells. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 188(2) (pp 871-875)
- Excitation and relaxation mechanisms in single In(Ga)As quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 373-378)
- Recombination of many-particle states in InAs self-organized quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 409-412)
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 497-502)
- Optical spectroscopy of single InAs quantum dots: excitation and relaxation mechanisms. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, Vol. 87 (pp 1195-1196)
- Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy. PHYSICA E, Vol. 9(1) (pp 106-113)
- Bandgap renormalization and carrier relaxation in self-organized InAs quantum dots. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, Vol. 87 (pp 1131-1132)
- Electronic properties of InAs/GaAs self-assembled quantum dot structures and devices studied by photocurrent spectroscopy. ACTA PHYSICA POLONICA A, Vol. 98(3) (pp 279-293)
- InAs-GaAs self-assembled quantum dot lasers: physical processes and device characteristics. PHYSICA E, Vol. 7(3-4) (pp 489-493)
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment. PHYSICA E, Vol. 7(3-4) (pp 408-412)
- Dynamical band gap renormalization in self-organized InAs/GaAs quantum dots. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 178(1) (pp 345-348)
- Quantum confined Stark effect and permanent dipole moment of InAs-GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 178(1) (pp 269-275)
- The stark effect and electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots. OPTICAL PROPERTIES OF SEMICONDUCTOR NANOSTRUCTURES, Vol. 81 (pp 337-346)
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: Observation of a permanent dipole moment. SEMICONDUCTOR QUANTUM DOTS, Vol. 571 (pp 147-152)
- Many-body effects in carrier capture and energy relaxation in self-organized InAs/GaAs quantum dots. PHYSICA B, Vol. 272(1-4) (pp 12-14)
- An optical study of the properties of (AlxGa1-x)(0.5)In0.49P epitaxial layers with varying composition, hydrostatic pressure and GaAs substrate orientation. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 66(1-3) (pp 126-130)
- Characterisation of the effects of Al incorporation in AlGaInP light emitters. COMPOUND SEMICONDUCTORS 1998(162) (pp 161-166)
- Effect of growth rate on the morphology and composition of InAs quantum dots grown on GaAs by MBE. MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS(164) (pp 111-116)
- TEM nanoscale analysis of InAs quantum dots grown on GaAs by MBE. ELECTRON MICROSCOPY AND ANALYSIS 1999(161) (pp 585-588)
- Excited states in self-assembled InAs/GaAs quantum plots under high pressure. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 211(1) (pp 73-77)
- Magneto-optical spectroscopy of InAs/GaAs self-organised quantum dots. PHYSICA E, Vol. 2(1-4) (pp 689-693)
- Optical spectroscopy of GaAs-AlGaAs v-groove quantum wires. PHYSICA E, Vol. 2(1-4) (pp 949-953)
- TEM observations of the variation in the configuration of self-assembled InAs quantum dots on GaAs. ELECTRON MICROSCOPY 1998, VOL 3 (pp 371-372)
- Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets. IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, Vol. 3001 (pp 135-146)
- Stimulated and spontaneous emission studies in ZnS1-xTex/ZnSe strain layer superlattices. JOURNAL OF CRYSTAL GROWTH, Vol. 159(1-4) (pp 689-693)
- Wannier-Stark ladder spectra in InxGa1-xAs-GaAs strained layer piezo-electric superlattices. SOLID-STATE ELECTRONICS, Vol. 40(1-8) (pp 167-170)
- Stark ladders in piezoelectric superlattices.. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, Vol. 17(11-12) (pp 1775-1779)
- SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS/GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES. SOLID-STATE ELECTRONICS, Vol. 37(4-6) (pp 645-648)
- FERMI SEA SHAKE-UP IN QUANTUM-WELL LUMINESCENCE SPECTRA. SOLID-STATE ELECTRONICS, Vol. 37(4-6) (pp 825-829)
- Optical properties and electroluminescence of ordered and disordered AlAs/GaAs superlattices. Materials Research Society Symposium Proceedings, Vol. 325 (pp 499-505)
- GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINP/ALGAINP QUANTUM-WELLS BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 551-554)
- THE BAND-GAP OF PERFECTLY DISORDERED GA0.52IN0.48P. 12TH NREL PHOTOVOLTAIC PROGRAM REVIEW(306) (pp 529-537)
- (pp 387-399)
- . AIP Conference Proceedings
- . International Conference on Molecular Bean Epitaxy
Preprints
- Research group
- Grants
-
- EPSRC InAs quantum dot lasers on Si substrates April 2012 – March 2016
- Innovate UK Fibre wavelength quantum light sources July 2015 – September 2020
- EPSRC Self-catalysed GaAsP/GaAs nanowire quantum dots for silicon-based novel quantum emitters October 2016 – March 2020
- Teaching activities
-
Current
- PHY21005 Fourier Techniques
- PHY21005 Electromagnetism
- PHY340 Problem solving
- Year 2 Physics Tutor
- Head of Year 2 Physics
- Senior Tutor
Recent
- PHY119 Nanotechnology
- PHY251 Solids
Recent undergraduate projects supervised
- The physics of digital photography (year 3)
- The physics of projectiles (year 3)
- Environmental sensing with a Raspberry Pi (year 3)
- Development of a presentation to teach the topic of sound to primary school children (year 3)
- Developing experiments to demonstrate the properties of light (year 3)
- Optical spectroscopy of semiconductor nanowires incorporating quantum dots (year 4)
Schools outreach talks
- Electricity (primary school)
- Sound (primary school)
- Light (primary school)
- Electromagnetic spectrum (secondary / 6th Form)
- Nanotechnology (6th Form)
- Solar Energy (6th Form)
- Quantum Mechanics (6th Form)
- Professional activities and memberships
-
- Member of the Institute of Physics
- Member of Institute of Physics Degree Accreditation Committee
- External Member of Open University Qualifications and Assessment Committee 2016-2021
- External Examiner Newcastle University 2016-2020
- External Examiner University of St Andrews 2019-
Departmental administration
- Head of Teaching 2004-2012
- Head of Department 2006-2012, Jan-Dec 2017
- Chair Equality and Diversity Committee 2012-2016
- Coordinator 91Ö±²¥-Nanjing Technical University Materials Physics Joint Degree 2013-2020
- Senior Tutor 2018-
- Head of Year 2 Physics 2020-