TY  - JOUR

T1  - InGaN/GaN quantum wells with low growth temperature GaN cap layers

JO  - J CRYST GROWTH

PY  - 2007/09/15

AU  - Pendlebury ST

AU  - Parbrook PJ

AU  - Mowbray DJ

AU  - Wood DA

AU  - Lee KB

ED  - 

DO  - DOI: 10.1016/j.jcrysgro.2007.07.018

VL  - 307

IS  - 2

SP  - 363

EP  - 366

Y2  - 2024/12/26

ER  -