TY  - JOUR

T1  - Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots

JO  - APPL PHYS LETT

PY  - 2009/09/07

AU  - Davies SC

AU  - Mowbray DJ

AU  - Wang Q

AU  - Ranalli F

AU  - Wang T

ED  - 

DO  - DOI: 10.1063/1.3224897

VL  - 95

IS  - 10

Y2  - 2024/12/26

ER  -