Professor Chee Hing Tan
PhD, BEng
School of Electrical and Electronic Engineering
Professor of Opto-Electronic Sensors
Professor of Opto-Electronic Sensors
Semiconductor Materials and Devices Research Group
+44 114 222 5144
Full contact details
School of Electrical and Electronic Engineering
- Profile
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I started as an undergraduate at the Department of Electronic and Electrical Engineering (EEE) at 91直播 in September 1996.
I was awarded a 1st class BEng in Electronic Engineering - Communications, and was fortunate to be given a full scholarship to pursue a PhD degree at EEE.
The PhD in Electronic Engineering significantly broadened my knowledge in Engineering and stimulated my desire to learn and research. In particular, I gained deep understanding of how optical and electronic device properties can be modified by carefully optimised semiconductor crystals.
The ability to select different atoms to be combined in new semiconductor materials has led to many breakthroughs in transistors, lasers, solar cell and detectors.
EEE has provided a wonderful environment for me to explore fundamental engineering questions, advance research to generate lasting impacts and to share my experience with students and researchers.
I have always felt at home because of the strong support from academics, when I was a student, and from colleagues across the department since I became an academic in 2003.
My career has progressed with great support from many great colleagues and students, whom I considered my 鈥渆xtended family鈥. The welcoming environment and strong research and teaching culture in EEE have helped to enrich my experience in work and in life.
In February 2019 I was appointed Head of Department for EEE, a position of responsibility which I am very proud to take up.
- Qualifications
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- PhD (Electronic Engineering), University of 91直播 2002
- BEng (Electronic Engineering - Communications), University of 91直播 1998
- Research interests
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- Avalanche photodiodes with electron-only ionisation for 鈥渘oiseless鈥 avalanche process (F<2) and extremely high gain-bandwidth product (>500 GHz).
- Design, modelling and characterisation of single photon avalanche diode (Si, GaAs, InAlAs, AlGaAsSb)
- High speed avalanche photodiodes for optical fiber communication, utilizing very thin avalanche region for improved excess noise and bandwidth (InP, InAlAs, AlGaAsSb lattice matched to InP)
- Novel multi-colour detectors for radiation thermometry
- High sensitivity detectors for infrared wavelengths bands NIR, SWIR, MWIR, LWIR and VLWIR
- Improving energy resolution of soft X-ray detection using avalanche photodiodes
- Publications
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Journal articles
- . Optica, 11(12), 1632-1632.
- . ACS Photonics, 11(11), 4846-4853.
- . Journal of Lightwave Technology.
- . Applied Physics Letters, 124(25).
- . IEEE Transactions on Electron Devices, 1-6.
- . IEEE Transactions on Electron Devices, 1-0.
- . IEEE Transactions on Electron Devices, 1-5.
- . Optica, 10(9), 1124-1124.
- . AIP Advances, 13(4), 045010-045010.
- . Applied Physics Letters, 122(5), 051103-051103.
- . Materials Science in Semiconductor Processing, 153, 107135-107135.
- . Semiconductor Science and Technology.
- . Optics Express, 30(12), 21758-21758.
- . Optics Express, 30(11), 17946-17946.
- . Journal of Lightwave Technology.
- . IEEE Photonics Technology Letters, 33(20), 1155-1158.
- . Nature Communications, 12(1).
- . IEEE Journal of Selected Topics in Quantum Electronics, 1-1.
- . Journal of Lightwave Technology, 38(15), 4183-4183.
- . Semiconductor Science and Technology.
- . Journal of Lightwave Technology.
- . Journal of Applied Physics, 126(12).
- . Nature Photonics.
- . Journal of Lightwave Technology, 37(10).
- . Optics Express, 27(4), 5835-5842.
- . Optics Express, 26(19), 24904-24916.
- . Scientific Reports, 8(1).
- . Solar Energy Materials and Solar Cells, 179, 334-338.
- . Nanoscale Research Letters, 13(1).
- . Optics Express, 26(3), 3568-3576.
- . Optics Express, 26(3), 3188-3198.
- . Optics Express, 25(26), 33610-33616.
- . IEEE Journal of Selected Topics in Quantum Electronics, 24(2).
- . IEEE Journal of Selected Topics in Quantum Electronics, 24(2).
- . Royal Society Open Science, 4, 170071-170071.
- . Optics Express, 25(3), 2818-2825.
- . Applied Physics Letters, 109(18).
- . Optics Express, 24(21), 24242-24247.
- . IEEE Photonics Technology Letters, 28(22), 2495-2498.
- . Journal of Instrumentation, 11(3).
- . Electronics Letters, 52(5), 385-386.
- . Royal Society Open Science, 3(3), 150584-150584.
- . Journal of Lightwave Technology, 34(11), 2639-2644.
- . IEEE Transactions on Electron Devices, 62(9), 2928-2932.
- . IEEE Photonics Technology Letters, 27(16), 1745-1748.
- . IEEE Sensors Journal, 15(10), 5555-5560.
- . IEEE Transactions on Instrumentation and Measurement, 64(2), 502-508.
- . Applied Physics Letters, 106(2), 022111-022111.
- . Optics Express, 22(19), 22608-22615.
- . Applied Physics Letters, 104(17).
- . Journal of Instrumentation, 9.
- . IEEE Transactions on Electron Devices, 61(3), 838-843.
- . Opt Express, 21(22), 25780-25787.
- . Semiconductor Science and Technology, 28(9).
- . Opt Express, 21(7), 8630-8637.
- . JOURNAL OF INSTRUMENTATION, 8.
- . IEEE Photonics Journal, 5(4).
- . Optics Express, 20(28), 29568-29576.
- . IEEE Transactions on Electron Devices, 59(4), 1063-1067.
- . Journal of Instrumentation, 7(8).
- . IET Power Electronics, 5(6), 739-746.
- . IEEE Transactions on Electron Devices, 59(5), 1475-1479.
- . Optics Express, 20(10), 10446-10452.
- . Optics Express, 20(8), 8575-8583.
- . Journal of Applied Physics, 111(3).
- . Physica Status Solidi (C) Current Topics in Solid State Physics, 9(2), 310-313.
- . IEEE Journal of Quantum Electronics, 48(1), 36-41.
- . Opt Express, 19(23), 23341-23349.
- . Opt Lett, 36(21), 4287-4289.
- . IEEE J QUANTUM ELECT, 47(11), 1391-1395.
- . IEEE J QUANTUM ELECT, 47(8), 1123-1128.
- . IEEE T ELECTRON DEV, 58(6), 1696-1701.
- . IEEE J QUANTUM ELECT, 47(6), 858-864.
- . IEEE J QUANTUM ELECT, 47(5), 607-613.
- . Journal of Instrumentation, 6(12).
- . Journal of Instrumentation, 6(12).
- . Journal of Physics: Conference Series, 326(1).
- The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
- . Infrared Physics and Technology, 54(3), 228-232.
- . IEEE Journal of Quantum Electronics, 47(2), 190-197.
- . IEEE Transactions on Electron Devices, 58(2), 486-489.
- Modelling results of avalanche multiplication in AlGaAs soft X-ray APDs. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
- . NUCL INSTRUM METH A, 621(1-3), 453-455.
- . IEEE J QUANTUM ELECT, 46(8), 1153-1157.
- Temperature dependence of the avalanche multiplication process and the impact ionization coefficients in Al0.8Ga0.2As. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
- . Journal of Physics: Conference Series, 242.
- . IEEE Transactions on Electron Devices, 57(10), 2631-2638.
- . IEEE PHOTONIC TECH L, 21(13), 866-868.
- . IEEE J QUANTUM ELECT, 45(7), 833-839.
- . IEEE J QUANTUM ELECT, 45(5-6), 566-571.
- . APPL PHYS LETT, 93(11).
- . NUCL INSTRUM METH A, 594(2), 202-205.
- . J APPL PHYS, 104(1).
- . IEEE J SEL TOP QUANT, 14(4), 998-1009.
- . IEEE J QUANTUM ELECT, 44(3-4), 378-382.
- . IEEE T ELECTRON DEV, 54(8), 2051-2054.
- . IEEE J SEL TOP QUANT, 13(4), 906-910.
- . IEEE J QUANTUM ELECT, 43(5-6), 503-507.
- . J MOD OPTIC, 54(2-3), 353-360.
- . IEEE T ELECTRON DEV, 54(1), 11-16.
- . MEAS SCI TECHNOL, 17(7), 1941-1946.
- . IEEE PHOTONIC TECH L, 17(11), 2412-2414.
- . IEEE J QUANTUM ELECT, 41(8), 1092-1096.
- . IEEE T ELECTRON DEV, 52(7), 1527-1534.
- . IEE P-OPTOELECTRON, 152(2), 140-144.
- . SEMICOND SCI TECH, 19(6), 720-724.
- . J APPL PHYS, 95(10), 5931-5933.
- . APPL PHYS LETT, 84(13), 2322-2324.
- . Journal of Modern Optics, 51(9-10), 1315-1321.
- . APPL PHYS LETT, 83(14), 2820-2822.
- . IEEE T ELECTRON DEV, 50(10), 2021-2026.
- The effect of dead space on gain and excess noise in In0.48Ga0.52P p(+)in(+) diodes. SEMICOND SCI TECH, 18(8), 803-806.
- . IEEE T ELECTRON DEV, 50(4), 901-905.
- . J LIGHTWAVE TECHNOL, 21(1), 155-159.
- A general method for estimating the duration of avalanche multiplication. SEMICOND SCI TECH, 17(10), 1067-1071.
- Effect of dead space on avalanche speed. IEEE T ELECTRON DEV, 49(4), 544-549.
- Treatment of soft threshold in impact ionization. J APPL PHYS, 90(5), 2538-2543.
- Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE T ELECTRON DEV, 48(7), 1310-1317.
- Avalanche noise measurement in thin Si p(+)-i-n(+) diodes. APPL PHYS LETT, 76(26), 3926-3928.
- The effect of an electric-field gradient on avalanche noise. APPL PHYS LETT, 75(19), 2963-2965.
- . Optics Express.
- . Journal of Instrumentation, 10(10), P10030-P10030.
- . Journal of Instrumentation, 9(08), T08005-T08005.
Conference proceedings papers
- . Optical Sensing and Detection VIII (pp 69-69), 7 April 2024 - 12 April 2024.
- . Optical Sensing and Detection VIII (pp 70-70), 7 April 2024 - 12 April 2024.
- . Infrared Technology and Applications L, 21 April 2024 - 26 April 2024.
- . Optical Components and Materials XX, 28 January 2023 - 3 February 2023.
- . Optical Components and Materials XIX, 22 January 2022 - 28 February 2022.
- . Optical Components and Materials XIX, 22 January 2022 - 28 February 2022.
- . Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III, 21 September 2020 - 25 September 2020.
- . Optical Components and Materials XVII, 1 February 2020 - 6 February 2020.
- . 2018 IEEE Photonics Conference (IPC), 30 September 2018 - 4 October 2018.
- . Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19 August 2018 - 23 August 2018.
- . Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19 August 2018 - 23 August 2018.
- . Advanced Photon Counting Techniques XI
- . Proceedings of SPIE, Vol. 9988, 26 September 2016 - 27 September 2016.
- . 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 26 June 2016 - 30 June 2016.
- . 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 26 June 2016 - 30 June 2016.
- . 2016 IEEE 6th International Conference on Photonics (ICP), 14 March 2016 - 16 March 2016.
- . MRS Advances, Vol. 1(48) (pp 3301-3306)
- Temperature dependence of avalanche gain in Al0.85Ga0.15As0.56Sb0.44 APD. 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)
- . 2015 IEEE Photonics Conference (IPC), 4 October 2015 - 8 October 2015.
- . Sensors, Systems, and Next-Generation Satellites XIX
- . 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS), 7 December 2014 - 10 December 2014.
- . 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
- . 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
- . 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
- . Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III
- . EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
- . 4th International Conference on Photonics, ICP 2013 - Conference Proceeding (pp 78-80)
- . 2012 IEEE Photonics Conference, IPC 2012 (pp 165-166)
- . Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012 (pp 220-221)
- . 2012 IEEE Photonics Conference, IPC 2012 (pp 167-168)
- . IEEE Nuclear Science Symposium Conference Record (pp 4809-4811)
- . IEEE Nuclear Science Symposium Conference Record (pp 4528-4531)
- . IEEE Nuclear Science Symposium Conference Record (pp 2238-2241)
- . IEEE Nuclear Science Symposium Conference Record (pp 2071-2073)
- . IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
- . IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 276-277)
- High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
- . IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 278-279)
- . INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2, Vol. 7660
- . 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 706-707)
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7838
- . Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 421-424)
- . Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 409-412)
- . Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 187-190)
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7681
- The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. PHOTON COUNTING APPLICATIONS, QUANTUM OPTICS, AND QUANTUM INFORMATION TRANSFER AND PROCESSING II, Vol. 7355
- Potential Materials for Avalanche Photodiodes Operating above 10Gb/s. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 442-447)
- Extended Wavelength Avalanche Photodiodes. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 454-457)
- . Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7320
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
- Low Strain Multiple Stack Quantum Dot Infrared Photodetectors for Multispectral and High Resolution Hyperspectral Imaging. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 166-167)
- Type-II photodiode and APD for detection in the 2-2.5 mu m wavelength range. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 293-294)
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
- . Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp 296-297)
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
- DESIGN CONSIDERATIONS FOR IN(0.52)AL(0.48)AS BASED AVALANCHE PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 331-333)
- Impact ionization of sub-micron InP structures. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 515-516)
- Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 513-514)
- The effects of monolayer thickness and sheet doping density on dark current and noise current in Quantum Dot Infrared Photodetectors - art. no. 67400J. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp J7400-J7400)
- Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400)
- InP-based avalanche photodiodes with > 2.1 mu m detection capability. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 293-295)
- Temperature dependence of inp-based avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 296-298)
- Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 81-83)
- . IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194)
- Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788)
- A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 789-790)
- Avalanche noise in In0.53Ga0.44As avalanching regions. 2005 International Conference on Indium Phosphide and Related Materials (pp 428-431)
- . JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321)
- . Device Research Conference - Conference Digest, DRC (pp 79-80)
- InP/InGaAs heterojunction phototransitors for optoelectronic receivers. 2004 IEEE International Conference on Semiconductor Electronics, Proceedings (pp A1-A5)
- Theoretical study of breakdown probabilities in single photon avalanche diodes. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 773-774)
- Avalanche multiplication noise in bulk and thin AlxGa1-xAs (x=0-0.8) PIN and NIP diodes. PHOTODETECTORS: MATERIALS AND DEVICES VI, Vol. 4288 (pp 39-46)
- Avalanche multiplication and noise in sub-micron Si p-i-n diodes. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3953 (pp 95-102)
- Low avalanche noise behaviour in bulk Al0.8Ga0.2As. 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 519-523)
- Low avalanche excess noise in thin AlxGa1-xAs (x=0.15 and 0.60) avalanche photodiodes. 2000 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 34-38)
- Avalanche multiplication and noise in sub-micron Si p-i-n diodes. SILICON-BASED OPTOELECTRONICS II, Vol. 3953 (pp 95-102)
- Design of low-noise avalanche photodiodes. OPTOELECTRONIC INTEGRATED CIRCUITS IV, Vol. 3950 (pp 30-38)
- Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 295-298)
- Electric field gradient dependence of excess avalanche noise. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO (pp 230-235)
Patents
- High Gain-Bandwidth Product Avalanche Photodiode. (UK). Appl. 01 Jan 1970.
- Ultra Low Noise InAs Avalanche Photodiodes. GB0723858.7 (UK). Appl. 01 Jan 1970.
Software / Code
Datasets
Other
- Teaching activities
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- Teaching: EEE337, EEE348 and EEE6216
- Undergraduate tutoring and project supervision
- Professional activities and memberships
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- Head of Department
- Member of Departmental Athena SWAN SAT
- Chair in Photon Detectors, Leads the Advanced Detector Centre
- Research students
Student Degree Status Primary/Secondary Das S D PhD Graduated Primary Gomes R B PhD Graduated Primary Hobbs M J PhD Graduated Primary Idris A S PhD Graduated Primary Liew Tat Mun S PhD Graduated Primary Marshall A R J PhD Graduated Primary Moreno Guerrero M A MPhil Graduated Primary Rowe M MPhil Graduated Primary White B S PhD Graduated Primary Xie J PhD Graduated Primary Xie S PhD Graduated Primary Zhou X PhD Graduated Primary GoH Y L PhD Graduated Secondary Goldberg G R PhD Graduated Secondary Ker P PhD Graduated Secondary Meng X PhD Graduated Secondary Tan S PhD Graduated Secondary