TY  - CONF

T1  - TEM analysis of dual column FIB processed Si/SiGe MOSFET device structures

JO  - ELECTRON MICROSCOPY AND ANALYSIS 2003

PY  - 2004/01/01

AU  - Chang ACK

AU  - Ross IM

AU  - Norris D

AU  - Cullis AG

ED  - McVitie S

ED  - McComb D

IS  - 179

SP  - 371

EP  - 374

Y2  - 2024/12/26

ER  -