TY  - JOUR

T1  - Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy

JO  - Materials Science in Semiconductor Processing

PY  - 2016/10/15

AU  - Sanson A

AU  - El Mubarek HAW

AU  - Gandy AS

AU  - De Salvador D

AU  - Napolitani E

AU  - Carnera A

ED  - 

DO  - DOI: 10.1016/j.mssp.2016.10.007

Y2  - 2025/01/13

ER  -