TY - JOUR
T1 - Breakdown characteristics of (AlxGa1-x)0.52In0.48P p-i-n diodes
JO - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PY - 1997/01/01
AU - David JPR
AU - Ghin R
AU - Plimmer SA
AU - Hopkinson M
AU - Allam J
ED -
SP - 256
EP - 260
Y2 - 2024/12/25
ER -