TY  - CONF

T1  - Effect of experimental parameters on doping contrast of Si p-n junctions in a FEG-SEM

JO  - MICROELECTRONIC ENGINEERING

PY  - 2004/06/01

AU  - Kazemian P

AU  - Rodenburg C

AU  - Humphreys CJ

ED  - 

DO  - DOI: 10.1016/j.mee.2004.03.080

VL  - 73-74

SP  - 948

EP  - 953

Y2  - 2024/12/26

ER  -