TY  - CONF

T1  - A study of processed and unprocessed dual channel Si/SiGe MOSFET device structures using FIB and TEM

JO  - Microscopy of Semiconducting Materials

PY  - 2005/01/01

AU  - Chang ACK

AU  - Norris DJ

AU  - Ross IM

AU  - Cullis AG

AU  - Olsen SH

AU  - O'Neill AG

ED  - Cullis AG

ED  - Hutchison JL

VL  - 107

SP  - 111

EP  - 114

Y2  - 2025/04/19

ER  -