TY  - JOUR

T1  - Deep levels in H-irradiated GaAs <inf>1-x</inf>N <inf>x</inf> (x &lt; 0.01) grown by molecular beam epitaxy

JO  - Journal of Applied Physics

PY  - 2011/01/01

AU  - Shafi M

AU  - Mari RH

AU  - Khatab A

AU  - Henini M

AU  - Polimeni A

AU  - Capizzi M

AU  - Hopkinson M

ED  - 

DO  - DOI: 10.1063/1.3664823

VL  - 110

IS  - 12

Y2  - 2024/12/25

ER  -