Publications by year

A comprehensive list of our research publications in chronological order.

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2022

  • Q. Li, M. Wang,Y. Bai, Q. Zhang, H. Zhang, Z. Tian,Y. Guo, J. Zhu,Y. Liu, F. Yun,T. Wang,Y. Hao, Two-Inch Wafer-Scale Exfoliation of Hexagonal Boron Nitride Films Fabricated by RF-Sputtering, Adv. Funct. Mater (2022), 2206094,

  • J. I. H. Haggar, S. S. Ghataora, V. Trinito, J. Bai, and T. Wang, Study of the Luminescence Decay of a Semipolar Green Light-Emitting Diode for Visible Light Communications by Time-Resolved Electroluminescence, ACS Photonics (2022), 

  • G. Martinez de Arriba, P. Feng, C. Xu, C. Zhu, J. Bai and T. Wang, Simple Approach to Mitigate the Emission Wavelength Instability of III-Nitride 渭LED Arrays, ACS Photonics (2022), 
  • Y. Tian, P. Feng, C. Zhu, X. Chen, C. Xu, V. Esendag, G. Martinez de Arriba and T. Wang, Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance, Materials, 15(10), 3536 (2022), 
  • P. Feng, C. Xu, J. Bai, C. Zhu, I. Farrer, G. Martinez de Arriba, and T. Wang, A Simple Approach to Achieving Ultrasmall III-Nitride Microlight-Emitting Diodes with Red Emission, ACS Appl. Electron. Mater., (2022),
  • R.Tang, G. Li, Y. Jiang, N. Gao, J. Li, C. Li, K. Huang, J. Kang, T. Wang, and R. Zhang, Ga2O3/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response, ACS Appl. Electron. Mater. 4, 1, 188鈥196 (2022),
2021

  • X. Wang, T. Wang, D. Yu and S. Xu, Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells, Journal of Applied Physics 130, 205704 (2021); 

  • V. Esendag, J. Bai, P. Fletcher, P. Feng, C. Zhu, Y. Cai and T. Wang, Investigation of electrical properties of InGaN based micro light emitting diode (碌LED) arrays achieved by direct epitaxy, physica status solidi (a), (2021), 

  • J. I. H. Haggar, Y. Cai, J. Bai, S. Ghataora, and T. Wang, Long-Wavelength Semipolar (11鈥22) InGaN/GaN LEDs with Multi-Gb/s Data Transmission Rates for VLC, ACS Appl. Electron. Mater. (2021), 

  • Y. Cai, C. Zhu, W. Zhong, P. Feng, S. Jiang, and T. Wang, Monolithically Integrated 碌LEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach, Adv. Mater. Technol. (2021), 2100214

  • J. R. Pugh , E. G. H. Harbord , A. Sarua , P. S. Fletcher , Y. Tian , T. Wang and M. J. Cryan, A Tamm Plasmon-Porous GaN Distributed Bragg Reflector Cavity, Journal of Optics, (2021),
  • Y. Cai, J. I. H. Haggar, C. Zhu, P. Feng, J. Bai, and T. Wang, Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth, ACS Appl. Electron. Mater, (2021),
2020
  • P. Coulon, P. Feng, T. Wang, P.A. Shields, Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 炉 2 ) and Non-Polar ( 11 2 炉 0 ) GaN Nanorods, Nanomaterials, 10, 2562 (2020),
  • J. Bruckbauer et al, Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaN, J. Phys. D: Appl. Phys. in press (2020),
  • H. Zeng, X. Yu, H. A. Fonseka, G. Boras, P. Jurczak, T. Wang, A. M. Sanchez and H. Liu, Preferred growth direction of III鈥揤 nanowires on differently oriented Si substrates, Nanotechnology, Volume 31, Number 47 (2020),
  • X. Zhao, K. Huang, J. Bruckbauer, S. Shen, C. Zhu, P. Fletcher, P. Feng, Y. Cai, J. Bai, C. Trager-Cowan, R. W. Martin and T. Wang, Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11鈥22) green LEDs grown on silicon, Scientific Reports, 10, 12650 (2020),
  • J. I. H. Haggar, Y. Cai, S. S. Ghataora, R. M. Smith, J. Bai, and T. Wang, High Modulation Bandwidth of Semipolar (11鈥22) InGaN/GaN LEDs with Long Wavelength Emission, ACS Appl. Electron. Mater. 2020,
  • Hiroshi Amano et al, The 2020 UV Emitter Roadmap, J. Phys. D: Appl. Phys, 2020,
  • J. Bai, Y. Cai, P. Feng, P. Fletcher, C. Zhu, Y. Tian, and T. Wang, Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (渭LEDs) with Narrow Spectral Line Width, ACS Nano, 14, 6, 6906鈥6911 (2020),
  • Y. Cai, S. Shen, C. Zhu, X. Zhao, J. Bai, and T. Wang, Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon, ACS Appl. Mater. Interfaces, Just Accepted Manuscript, (2020),
  • N. Poyiatzis, J. Bai, R. M. Smith, M. Athanasiou, S. Ghataora & T. Wang, Optical polarization properties of (11鈥22) semi-polar InGaN LEDs with a wide spectral range, Scientific Reports volume 10, Article number: 7191 (2020),
  • P-M. Coulon, P. Feng, B. Damilano, S. V茅zian, T. Wang & P. A. Shields, Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays, Scientific Reports, volume 10, Article number: 5642 (2020),
  • C. Trager-Cowan et al, Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope, Semicond. Sci. Technol. 35 054001 (2020),
  • M. Athanasiou, P. Papagiorgis, A. Manoli, C. Bernasconi, N. Poyiatzis P-M. Coulon, P. Shields M. I. Bodnarchuk, M. V. Kovalenko, T. Wang, G. Itskos, InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting, ACS Appl. Nano Mater. 3, 3, 2167-2175 (2020),
  • S. Jiang, Y. Cai, P. Feng, S. Shen, X. Zhao, P. Fletcher, V. Esendag, K. Lee & T. Wang, Exploring an approach toward the intrinsic limits of GaN electronics, ACS Appl. Mater. Interfaces (2020),
  • J. Bai, Y. Cai, P. Feng, P. Fletcher, X. Zhao, C. Zhu, & T. Wang, A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (渭LEDs), ACS Photonics, 7, 2, 411-415, (2020),
  • J. Bruckbauer1, C. Trager-Cowan, B. Hourahine1, A. Winkelmann, P. Venn茅gu猫s, A. Ipsen, X. Yu, X. Zhao, M. J. Wallace, P. R. Edwards, G. Naresh-Kumar, M. Hocker, S. Bauer, R. M眉ller, J. Bai, K. Thonke, T. Wang, and R. W. Martin, Luminescence behavior of semipolar (1011) InGaN/GaN 鈥渂ow-tie鈥 structures on patterned Si substrates, Journal of Applied Physics, 127, 035705 (2020),
2019
  • S. Shen, X. Zhao, X. Yu, C. Zhu, J. Bai, T. Wang, Semi鈥怭olar InGaN鈥怋ased Green Light鈥怑mitting Diodes Grown on Silicon, Phys. Status Solidi A, (2019), 1900654,
  • C. Trager-Cowan, A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, R. Johnston, G. Naresh-Kumar, R. W. Martin, M. Nouf-Allehiani, E. Pascal, L. Spasevski, D. Thomson, S. Vespucci, P. J. Parbrook, M. D. Smith, J. Enslin, F. Mehnke, M. Kneissl, C. Kuhn, T. Wernicke, S. Hagedorn, A. Knauer, V. Kueller, S. Walde, M. Weyers, P.-M. Coulon, P. A. Shields, Y. Zhang, L. Jiu, Y. Gong, R. M. Smith, T. Wang, and A. Winkelmann, Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films, Photonics Research, Vol. 7, Issue 11, pp. B73-B82 (2019),
  • Y. Zhang, R. M. Smith, L. Jiu, J. Bai & T. Wang, Confocal photoluminescence investigation to identify basal stacking fault鈥檚 role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes, Scientific Reports, volume 9, Article number: 9735 (2019),
  • J. Bai, L. Jiu, N. Poyiatzis, P. Fletcher, Y. Gong & T. Wang, Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates, Scientific Reports, volume 9, Article number: 9770 (2019),
  • G. Naresh-Kumar , J. Bruckbauer , A. Winkelmann, X. Yu, B. Hourahine, P. R. Edwards, T. Wang, C. Trager-Cowan, and R. W. Martin, Determining GaN Nanowire Polarity and its Influence on Light Emission in the Scanning Electron Microscope, Nano Letters,
  • Z. A. Syed, Y. Hou, X. Yu, S. Shen, M. Athanasiou, J. Bai , and T. Wang, Ultra-Energy-Efficient Photoelectrode Using Microstriped GaN on Si, ACS Photonics, 6, 1302-1306 (2019),
  • Qiang Li, Zhenhuan Tian, Yuantao Zhang, Zuming Wang, Yufeng Li, Wen Ding, Tao Wang & Feng Yun, 3D ITO-nanowire networks as transparent electrode for all-terrain substrate, Scientific Reports, volume 9, Article number: 4983 (2019),
  • Y. Cai, X. Yu, S. Shen, X. Zhao, L. Jiu, C. Zhu, J. Bai and T. Wang, Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method, Semiconductor Science and Technology, Volume 34, Number 4 (2019),
  • N. Poyiatzis, M. Athanasiou, J. Bai, Y. Gong & T. Wang, Monolithically integrated white light LEDs on (11鈥22) semi-polar GaN templates, Scientific Reports, Volume 9, 1383 (2019),
  • Y. Gong, L. Jiu, J. Bruckbauer, J. Bai, R. W. Martin & T. Wang, Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN, Scientific Reports, Volume 9, 986, (2019),
2018
  • Qiang Li, Yuantao Zhang, Zuming Wang, Yufeng Li, Wen Ding, Tao Wang, and Feng Yun, Heavily tin-doped indium oxide nano-pyramids as high-performance gas sensor, AIP Advances, 8, 115316 (2018);
  • Yuefei Cai, Chenqi Zhu, Ling Jiu, Yipin Gong, Xiang Yu, Jie Bai, Volkan Esendag and Tao Wang, Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1鈭抶N Layers, Materials (2018), 11(10), 1968;
  • Yuefei Cai, Yipin Gong, Jie Bai, Xiang Yu, Chenqi Zhu, Volkan Esendag, Kean Boon Lee, Tao Wang, Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices, IEEE Photonics Journal (2018),
  • G. Naresh-Kumar, David Thomson, Y. Zhang, J. Bai, L. Jiu, X. Yu, Y. P. Gong, Richard Martin Smith, Tao Wang, and Carol Trager-Cowan, Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging, Journal of Applied Physics 124, 065301 (2018);
  • L. Jiu, Y. Gong & T. Wang, Overgrowth and strain investigation of (11鈥20) non-polar GaN on patterned templates on sapphire, Scientific Reports, Volume 8, Article number: 9898 (2018);
  • Q. Li, Y. Zhang, L. Feng, Z.Wang, T. Wang & F. Yun, Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering, Nanotechnology 29 165708 (11pp) (2018)
  • C. Brasser, J. Bruckbauer, Y. Gong, L. Jiu, J. Bai, M. Warzecha, P. R. Edwards, T. Wang, and R. W. Martin, Cathodoluminescence studies of chevron features in semi-polar (112鈳幆2) InGaN/GaN multiple quantum well structures, Journal of Applied Physics 123, 174502 (2018);
  • S. Ghataora, R. M. Smith, M. Athanasiou, and T. Wang, Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes with Nonradiative F枚rster Resonance Energy Transfer, ACS Photonics 5 (2), pp 642鈥647 (2018)
  • J Bai, YP Gong, Z Li, Y Zhang, T Wang, Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560nm, Solar Energy Materials and Solar Cells 175, 47-51, (2018)
2017
  • Y. Hou, Z. Ahmed Syed, L. Jiu, J. Bai, and T. Wang, Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes, Appl. Phys. Lett. 111, 203901 (2017);
  • P. -M. Coulon, J. R. Pugh, M. Athanasiou, G. Kusch, E. D. Le Boulbar, A. Sarua, R. Smith, R. W. Martin, T. Wang, M. Cryan, D. W. E. Allsopp, and P. A. Shields, Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities, Optics Express, Vol. 25, Issue 23, pp. 28246-28257 (2017)
  • T Wang, Y Hou, Nanofabrication of III-Nitride Emitters for Solid-State Lighting, pages 31鈥65, Handbook of Solid-State Lighting and LEDs, Print ISBN: 978-1-4987-4141-5, eBook ISBN: 978-1-4987-4142-2,
  • J. Bruckbauer, Z. Li, G. Naresh-Kumar, M.Warzecha, P. R. Edwards, L. Jiu, Y. Gong, J. Bai, T. Wang, C. Trager-Cowan & R. W. Martin, Spatially-resolved optical and structural properties of semi-polar (112炉2) Al x Ga1鈭抶 N with x up to 0.56, Scientific Reports 7, Article number: 10804 (2017);
  • M. Athanasiou, R. M. Smith, J. Pugh, Y. Gong, M. J. Cryan & T. Wang, Monolithically multi-color lasing from an InGaN microdisk on a Si substrate, Scientific Reports 7, Article number: 10086 (2017),
  • B. Xu, L. Jiu, Y. Gong, Y. Zhang, L. C. Wang, J. Bai, and T. Wang (2017), Advances Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire. AIP Advances 7, 045009 (2017);
  • Li, Z., Wang, L., Jiu, L., Bruckbauer, J., Gong, Y., Zhang, Y., Bai, J., Martin, R. W. and Wang, T. (2017), Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition. Applied Physics Letters, 110 (9). 091102;
  • Li, Z.,  Jiu, L., Gong, Y., Wang, L.,  Zhang, Y., Bai, J., and Wang, T. (2017), Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue. Applied Physics Letters, 110, 082103;
  • Athanasiou, M., Smith, R. M, Ghataora, S. & Wang, T. (2017), Polarized white light from hybrid organic/III-nitrides grating structures. Scientific Reports 7, Article number: 39677.
2016
  • Wang, T. (2016), Development of III-nitride nanostructures for low threshold lasing and semipolar GaN towards Yellow/Orange lasing. Photonics Conference (IPC), 2016 IEEE,
  • Wang, T. (2016), Semi-polar InGaN/GaN based long emission wavelength emitter for lighting and displays. Photonics Conference (IPC), 2016 IEEE,
  • Zhang, Y., Bai, J., Hou, Y., Yu, X., Gong,Y., Smith, R. M. , and Wang, T. (2016) Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates, Applied Physics Letters 109(24) Article number 241906 Dec 2016
  • Hou, Y., Yu, X., Syed, Z. A., Shen, S., Bai, J., & Wang, T. (2016). GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting.. Nanotechnology, 27(45).
  • Wang, T. (2016). Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission. Semiconductor Science and Technology, 31(9), 093003.
  • Zhang, Y., Huang, J. -A., Li, K. H., Bai, D., Wang, Y., Wang, T., & Choi, H. W. (2016). Influence of strain on emission from GaN-on-Si microdisks. Journal of Physics D: Applied Physics, 49(37), 375103.
  • Hou, Y., Syed, Z. A., Smith, R., Athanasiou, M., Gong, Y., Yu, X., . . . Wang, T. (2016). Enhanced water splitting with silver decorated GaN photoelectrode. Journal of Physics D: Applied Physics, 49(26), 265601.
  • Hou, Y., Bai, J., Smith, R., & Wang, T. (2016). A single blue nanorod light emitting diode. Nanotechnology, 27(20).
  • Yu, X., Hou, Y., Shen, S., Bai, J., Gong, Y., Zhang, Y., & Wang, T. (2016). Semi-polar (11-22) GaN grown on patterned (113) Si substrate. physica status solidi (c), 13(5-6), 190-194.
  • Southern-Holland, R., Halsall, M., Wang, T., & Gong, Y. (2016). Power density dependent photoluminescence spectroscopy and Raman mapping of semi-polar and polar InGaN/GaN multiple quantum well samples. physica status solidi (c), 13(5-6), 274-277.
  • Bai, J., Athanasiou, M., & Wang, T. (2016). Effect of an ITO current spreading layer on the performance of InGaN MQW solar cells. physica status solidi (c), 13(5-6), 297-300.
  • Bai, J., Athanasiou, M., & Wang, T. (2016). Influence of the ITO current spreading layer on efficiencies of InGaN-based solar cells. Solar Energy Materials and Solar Cells, 145, 226-230.
  • Zhang, Y., Bai, J., Hou, Y., Smith, R. M., Yu, X., Gong, Y., & Wang, T. (2016). Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template. AIP Advances, 6(2), 025201.
  • Zhang, Y., Smith, R. M., Hou, Y., Xu, B., Gong, Y., Bai, J., & Wang, T. (2016). Stokes shift in semi-polar ( 112炉2) InGaN/GaN multiple quantum wells. Applied Physics Letters, 108(3), 031108.
  • Zhang, Y., Feng, C., Wang, T., & Choi, H. W. (2016). GaN hemispherical micro-cavities. Applied Physics Letters, 108(3), 031110.
  • Zhuang, Z., Guo, X., Liu, B., Hu, F., Dai, J., Zhang, Y., . . . Zhang, R. (2016). Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale. Nanotechnology, 27(1), 015301.
2015
  • Bai, J., Xu, B., Guzman, F. G., Xing, K., Gong, Y., Hou, Y., & Wang, T. (2015). (11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates. Applied Physics Letters, 107(26), 261103.
  • Athanasiou, M., Smith, R. M., Hou, Y., Zhang, Y., Gong, Y., & Wang, T. (2015). Enhanced polarization of (11鈥22) semi-polar InGaN nanorod array structure. Applied Physics Letters, 107(14), 141110.
  • Smith, R. M., Athanasiou, M., Bai, J., Liu, B., & Wang, T. (2015). Enhanced non-radiative energy transfer in hybrid III-nitride structures. Applied Physics Letters, 107(12), 121108.
  • Humphreys, B., Zhang, T., Griffiths, C., & Wang, T. (2015). Development of high quality and low defect density semipolar and non-polar GaN templates. In 2013 10th China International Forum on Solid State Lighting, ChinaSSL 2013 (pp. 52-55).
  • Bai, J., Yu, X., Gong, Y., Hou, Y. N., Zhang, Y., & Wang, T. (2015). Growth and characterization of semi-polar (11-22) GaN on patterned (113) Si substrates. Semiconductor Science and Technology, 30(6), 065012.
  • Tang, H., Liu, B., & Wang, T. (2015). Influence of piezoelectric fields on InGaN based intermediate band solar cells. Journal of Physics D: Applied Physics, 48(2), 025101.
  • Xu, B., Yu, X., Gong, Y., Xing, K., Bai, J., & Wang, T. (2015). Study of high-quality (11鈭22) semi-polar GaN grown on nanorod templates. physica status solidi (b), 252(5), 1079-1083.
  • Gong, Y., Xing, K., Xu, B., Yu, X., Li, Z., Bai, J., & Wang, T. (2015). (Invited) High Efficiency Green-Yellow Emission from InGaN/GaN Quantum Well Structures Grown on Overgrown Semi-Polar (11-22) GaN on Regularly Arrayed Micro-Rod Templates. In ECS Transactions 66 (pp. 151-155).
2014
  • Liu, B., Smith, R., Athanasiou, M., Yu, X., Bai, J., & Wang, T. (2014). Temporally and spatially resolved photoluminescence investigation of (112炉2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates. Applied Physics Letters, 105(26), 261103. doi:
  • Benton, J., Bai, J., & Wang, T. (2014). Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting. Applied Physics Letters, 105(22), 223902. doi:
  • Athanasiou, M., Smith, R., Liu, B., & Wang, T. (2014). Room temperature continuous鈥搘ave green lasing from an InGaN microdisk on silicon. Scientific Reports, 4. doi:
  • Smith, R. M., Liu, B., Bai, J., & Wang, T. (2014). Temperature dependence of non-radiative energy transfer in hybrid structures of InGaN/GaN nanorods and F8BT films. Applied Physics Letters, 105(17), 171111. doi:
  • Wang, T. (2014). MOCVD growth of nitride DBRs for optoelectronics. In A. H. W. Choi (Ed.), Handbook of Optical Microcavities (pp. 526 pages). CRC Press.
  • Zhang, Y., Ma, Z., Zhang, X., Wang, T., & Choi, H. W. (2014). Optically pumped whispering-gallery mode lasing from 2-渭m GaN micro-disks pivoted on Si. Applied Physics Letters, 104(22), 221106. doi:
  • Kim, T., Liu, B., Smith, R., Athanasiou, M., Gong, Y., & Wang, T. (2014). Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells. Applied Physics Letters, 104(16). doi:
  • Bai, J., Yang, C. C., Athanasiou, M., & Wang, T. (2014). Efficiency enhancement of InGaN/GaN solar cells with nanostructures. Applied Physics Letters, 104(5), 051129. doi:
  • Hou, Y., Renwick, P., Liu, B., Bai, J., & Wang, T. (2014). Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold. Scientific Reports, 4. doi:
  • Benton, J., Bai, J., & Wang, T. (2014). Nanoporous GaN for enhanced solar hydrogen production. In Proceedings of SPIE 鈥 The International Society for Optical Engineering 9176. doi:
2013
  • Benton, J., Bai, J., & Wang, T. (2013). Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation. Applied Physics Letters, 103(13), 133904. doi:
  • Bruckbauer, J., Edwards, P. R., Bai, J., Wang, T., & Martin, R. W. (2013). Probing light emission from quantum wells within a single nanorod. Nanotechnology, 24(36). doi:
  • Liu, B., Smith, R., Bai, J., Gong, Y., & Wang, T. (2013). Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures. Applied Physics Letters, 103(10). doi:
  • Xing, K., Gong, Y., Yu, X., Bai, J., & Wang, T. (2013). Improved crystal quality of (11-22) semi-polar GaN grown on a nanorod template. Japanese Journal of Applied Physics, 52(8 PART 2). doi:
  • Smith, R., Liu, B., Bai, J., & Wang, T. (2013). Hybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters.. Nano Lett, 13(7), 3042-3047. doi:
  • Athanasiou, M., Kim, T. K., Liu, B., Smith, R., & Wang, T. (2013). Fabrication of two-dimensional InGaN/GaN photonic crystal structure using a modified nanosphere lithography technique. Applied Physics Letters, 102(19). doi:
  • Benton, J., Bai, J., & Wang, T. (2013). Enhancement in solar hydrogen generation efficiency using a GaN-based nanorod structure. Applied Physics Letters, 102(17), 173905. doi:
  • Bai, J., Gong, Y., Xing, K., Yu, X., & Wang, T. (2013). Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates. Applied Physics Letters, 102(10), 101906. doi:
  • Walther, T., Amari, H., Ross, I. M., Wang, T., & Cullis, A. G. (2013). Lattice resolved annular dark-field scanning transmission electron microscopy of (Al,Ga)GaN/GaN layers for measuring segregation with sub-monolayer precision. Journal of Materials Science, 48, 2883-2892. doi:
2012
  • Edwards, P. R., Jagadamma, L. K., Bruckbauer, J., Liu, C., Shields, P., Allsopp, D., . . . Martin, R. W. (2012). High-Resolution Cathodoluminescence Hyperspectral Imaging of Nitride Nanostructures. In Microscopy and Microanalysis 18 (pp. 1212-1219). doi:
  • Bai, J., Wang, Q., & Wang, T. (2012). Characterization of InGaN-based nanorod light emitting diodes with different indium compositions. Journal of Applied Physics, 111(11), 113103. doi:
  • Renwick, P., Tang, H., Bai, J., & Wang, T. (2012). Reduced longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures. APPLIED PHYSICS LETTERS, 100(18). doi:
  • Wang, Q., Bai, J., Gong, Y. P., & Wang, T. (2012). Investigation of the optical properties of InGaN/GaN nanorods with different indium composition. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(3-4), 620-623.
  • Gong, Y., Xing, K., Bai, J., & Wang, T. (2012). Greatly improved crystal quality of non-polar GaN grown on a-plane GaN nano-rod template obtained using self-organised nano-masks. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(3-4), 564-567.
  • Bai, J., Wang, Q., & Wang, T. (2012). Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes. Physica Status Solidi (A) Applications and Materials Science, 209(3), 477-480.
  • Hueting, N. A., Engin, E., Zain, A. M., Sarua, A., Heard, P. J., Kuball, M., . . . Cryan, M. J. (2012). Gallium Nitride distributed Bragg Reflector cavity for integrated photonics applications. 2012 Conference on Lasers and Electro-Optics, CLEO 2012.
  • Amari, H., Ross, I. M., Wang, T., & Walther, T. (2012). Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEM. In Journal of Physics: Conference Series 371 (pp. 012014 (4 pages)).
  • Amari, H., Ross, I. M., Wang, T., & Walther, T. (2012). Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM. Physica Status Solidi. C: Current Topics in Solid State Physics, 9(3-4), 546-549. doi:
  • Amari, H., Ross, I. M., Wang, T., & Walther, T. (2012). Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(3-4), 546-549.
  • Hueting, N. A., Pugh, J. R., Engin, E., Zain, A. M., Sarua, A., Heard, P. J., . . . Cryan, M. J. (2012). A gallium nitride Distributed Bragg Reflector cavity for integrated photonics applications. International Conference on Transparent Optical Networks. doi:
  • Hueting, N. A., Engin, E., Zain, A. M., Sarua, A., Heard, P. J., Kuball, M., . . . Cryan, M. J. (2012). A gallium nitride distributed bragg reflector cavity for integrated photonics applications. CLEO: Science and Innovations, CLEO_SI 2012.
  • Hueting, N. A., Engin, E., Md Zain, A., Sarua, A., Heard, P. J., Kuball, M., . . . Cryan, M. J. (2012). A gallium nitride distributed bragg reflector cavity for integrated photonics applications. CLEO: Applications and Technology, CLEO_AT 2012.
  • Hueting, N. A., Engin, E., Md Zain, A., Sarua, A., Heard, P. J., Kuball, M., . . . Cryan, M. J. (2012). A gallium nitride distributed bragg reflector cavity for integrated photonics applications. Optics InfoBase Conference Papers.
2011
  • Xing, K., Gong, Y., Bai, J., & Wang, T. (2011). InGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using self-organized nano-masks. APPLIED PHYSICS LETTERS, 99(18). doi:
  • Gong, Y. P., Xing, K., & Wang, T. (2011). Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures. APPLIED PHYSICS LETTERS, 99(17). doi:
  • Parbrook, P. J., & Wang, T. (2011). Light Emitting and Laser Diodes in the Ultraviolet. IEEE J SEL TOP QUANT, 17(5), 1402-1411. doi:
  • Bruckbauer, J., Edwards, P. R., Wang, T., & Martin, R. W. (2011). High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures. APPL PHYS LETT, 98(14), . doi:
  • Gong, Y. P., Xing, K., & Wang, T. (2011). Optical gain in AlGaN/AlGaN multiple quantum wells grown on high temperature AlN multiple buffers. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(7-8), 2056-2058. doi:
  • Xing, K., Gong, Y., Bai, J., & Wang, T. (2011). InGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using self-organized nano-masks. Applied Physics Letters, 99(18). doi:
  • Wang, Q., Bai, J., Gong, Y. P., & Wang, T. (2011). Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods. Journal of Physics D: Applied Physics, 44(39). doi:
  • Gong, Y. P., Xing, K., & Wang, T. (2011). Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures. Applied Physics Letters, 99(17). doi:
  • Renwick, P., Tang, H., Wang, Q., Smith, R., & Wang, T. (2011). Enhanced internal quantum efficiency of an ingan/gan quantum well as a function of silver thickness due to surface plasmon coupling. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(7-8), 2176-2178. doi:
2010
  • Lee, K. B., Parbrook, P. J., Wang, T., Bai, J., Ranalli, F., Airey, R. J., & Hill, G. (2010). The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes. In PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 247 (pp. 1761-1763). doi:
  • Green, R. T., Luxmoore, J., Lee, K. B., Houston, P. A., Ranalli, F., Wang, T., . . . Martin, T. (2010). Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe. J APPL PHYS, 108(1), . doi:
  • Davies, S. C., Mowbray, D. J., Ranalli, F., & Wang, T. (2010). Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures. APPL PHYS LETT, 96(25), . doi:
  • Chen, R., Sun, H. D., Wang, T., Hui, K. N., & Choi, H. W. (2010). Optically pumped ultraviolet lasing from nitride nanopillars at room temperature. APPL PHYS LETT, 96(24), . doi:
  • Lari, L., Amari, H., Walther, T., Bai, J., Wang, T., & Cullis, A. G. (2010). Electron microscopy of AlGaN-based multilayers for UV laser devices. Journal of Physics: Conference Series, 241. doi:
2009
  • Wang, Q., Gong, Y. P., Zhang, J. F., Bai, J., Ranalli, F., & Wang, T. (2009). Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire. APPL PHYS LETT, 95(16), . doi:
  • Davies, S. C., Mowbray, D. J., Ranalli, F., Parbrook, P. J., Wang, Q., Wang, T., . . . Bangert, U. (2009). Optical and microstructural studies of InGaN/GaN quantum dot ensembles. Applied Physics Letters, 95(11), 111903. doi:
  • Davies, S. C., Mowbray, D. J., Wang, Q., Ranalli, F., & Wang, T. (2009). Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots. Applied Physics Letters, 95(10), 101909. doi:
  • Green, R. T., Luxmoore, I. J., Houston, P. A., Ranalli, F., Wang, T., Parbrook, P. J., . . . Martin, T. (2009). Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes. Semiconductor Science and Technology, 24(7), 075020. doi:
  • Lee, K. B., Parbrook, P. J., Wang, T., Bai, J., Ranalli, F., Airey, R. J., & Hill, G. (2009). Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes. In Journal of Crystal Growth 311 (pp. 2857-2859). doi:
  • Fang, L., Tao, W., Bo, S., Sen, H., Fang, L., Nan, M., . . . Jian-Quan, Y. (2009). Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts. Chinese Physics B, 18(4), 1618-1621. doi:
  • Fang, L., Tao, W., Bo, S., Sen, H., Fang, L., Nan, M., . . . Jian-Quan, Y. (2009). The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al 0.245 Ga 0.755 N/GaN heterostructure and Ni/Au Schottky contact. Chinese Physics B, 18(4), 1614-1617. doi:
  • Bai, J., Wang, Q., Wang, T., Cullis, A. G., & Parbrook, P. J. (2009). Optical and microstructural study of a single layer of InGaN quantum dots. Journal of Applied Physics, 105(5), 053505. doi:
  • Davies, S. C., Mowbray, D. J., Parbrook, P. J., Ranalli, F., & Wang, T. (2009). Optical spectroscopy of InGaN-GaN quantum dot ensembles. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(SUPPL. 2). doi:
  • Davies, S. C., Mowbray, D. J., Parbrook, P. J., Ranalli, F., & Wang, T. (2009). Optical spectroscopy of InGaN-GaN quantum dot ensembles. In R. Butte (Ed.), PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 (pp. S586-S589). doi:
  • Ranalli, F., Parbrook, P. J., Bai, J., Lee, K. B., Wang, T., & Cullis, A. G. (2009). Non-polar AlN and GaN/AlN on r-plane sapphire. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(SUPPL. 2). doi:
  • Ranalli, F., Parbrook, P. J., Bai, J., Lee, K. B., Wang, T., & Cullis, A. G. (2009). Non-polar AlN and GaN/AlN on r-plane sapphire. In R. Butte (Ed.), PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 (pp. S780-S783). doi:
  • Wang, Q., Bai, J., Wang, T., Cullis, A. G., Parbrook, P. J., & Ranalli, F. (2009). MOCVD growth and optical study of InGaN quantum dots and their emitters on a high quality GaN layer grown using a high temperature AlN as buffer. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(SUPPL. 2). doi:
  • Wang, Q., Bai, J., Wang, T., Cullis, A. G., Parbrook, P. J., & Ranalli, F. (2009). MOCVD growth and optical study of InGaN quantum dots and their emitters on a high quality GaN layer grown using a high temperature AlN as buffer. In R. Butte (Ed.), PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 (pp. S582-S585). doi:
2008
  • Brown, J., Wells, J. -P. R., Kundys, D. O., Fox, A. M., Wang, T., Parbrook, P. J., . . . Skolnick, M. S. (2008). Excitonic spin lifetimes in InGaN quantum wells and epilayers. Journal of Applied Physics, 104(5), 053523. doi:
  • Wang, Q., Wang, T., Bai, J., Cullis, A. G., Parbrook, P. J., & Ranalli, F. (2008). Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes. Applied Physics Letters, 93(8), 081915. doi:
  • Bai, J., Wang, T., Lee, K. B., Parbrook, P. J., Wang, Q., & Cullis, A. G. (2008). Generation of misfit dislocations in highly mismatched GaN/AlN layers. Surface Science, 602(15), 2643-2646. doi:
  • Wang, Q., Wang, T., Bai, J., Cullis, A. G., Parbrook, P. J., & Ranalli, F. (2008). Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer. Journal of Applied Physics, 103(12), 123522. doi:
  • Wang, T., Lee, K. B., Bai, J., Parbrook, P. J., Ranalli, F., Wang, Q., . . . Dawson, M. D. (2008). The 310鈥340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer. Journal of Physics D: Applied Physics, 41(9), 094003. doi:
  • Airey, R. J., Lee, K. B., Parbrook, P. J., Bai, J., Ranalli, F., Wang, T., & Hill, G. (2008). Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer. Journal of Physics D: Applied Physics, 41(9), 094004. doi:
  • Wang, Q., Wang, T., Parbrook, P. J., Bai, J., & Cullis, A. G. (2008). Optical Properties of InGaN Quantum Dots With and Without a GaN Capping Layer. In MICROSCOPY OF SEMICONDUCTING MATERIALS 2007 120 (pp. 21-24).Retrieved from 
  • Bai, J., Wang, T., Parbrook, P. J., Lee, K. B., Wang, Q., & Cullis, A. G. (2008). Generation of Misfit Dislocations in Highly Mismatched GaN/AlN Layers. In MICROSCOPY OF SEMICONDUCTING MATERIALS 2007 120 (pp. 33-36). Retrieved from 
  • Trager-Cowan, C., Sweeney, F., Edwards, P. R., Dynowski, F. L., Wilkinson, A. J., Winkelmann, A., . . . Joy, D. C. (2008). Electron channeling and ion channeling contrast imaging of dislocations in nitride thin films. Microscopy and Microanalysis, 14(SUPPL. 2), 1194-1195. doi:
2007
  • Wang, T. (2007). Nitride Emitters 鈥 Recent Progress. In Wide Bandgap Light Emitting Materials and Devices (pp. 109-144). doi:
  • Sherliker, B., Halsall, M., Kasalynas, I., Seliuta, D., Valusis, G., Vengris, M., . . . Buckle, P. D. (2007). Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3鈥4 碌m wavelength range. Semiconductor Science and Technology, 22(11), 1240-1244. doi:
  • Bai, J., Wang, T., Parbrook, P. J., Wang, Q., Lee, K. B., & Cullis, A. G. (2007). Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer. Applied Physics Letters, 91(13), 131903. doi:
  • Fan, W. H., Olaizola, S. M., Wells, J. P. R., Fox, A. M., Wang, T., Parbrook, P. J., . . . Skolnick, M. S. (2007). Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells (vol 84, pg 3052, 2004). APPL PHYS LETT, 91(9), . doi:
  • Wang, Q., Wang, T., Parbrook, P. J., Bai, J., & Cullis, A. G. (2007). The influence of a capping layer on optical properties of self-assembled InGaN quantum dots. Journal of Applied Physics, 101(11), 113520. doi:
  • Alyamani, A., Sanvitto, D., Khalifa, A. A., Skolnick, M. S., Wang, T., Ranalli, F., . . . Airey, R. (2007). GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates. Journal of Applied Physics, 101(9), 093110. doi:
  • Green, R. T., Tan, W. S., Houston, P. A., Wang, T., & Parbrook, P. J. (2007). Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination. In Journal of Electronic Materials 36 (pp. 397-402). doi:
  • King, P. D. C., Veal, T. D., Jefferson, P. H., McConville, C. F., Wang, T., Parbrook, P. J., . . . Schaff, W. J. (2007). Valence band offset of InN鈭旳lN heterojunctions measured by x-ray photoelectron spectroscopy. Applied Physics Letters, 90(13), 132105. doi:
  • Lee, K. B., Parbrook, P. J., Wang, T., Ranalli, F., Martin, T., Balmer, R. S., & Wallis, D. J. (2007). Optical investigation of exciton localization in AlxGa1-xN. J APPL PHYS, 101(5), . doi:
  • Ranalli, F., Parbrook, P. J., Wang, T., Bai, J., Lee, K. B., Airey, R. J., . . . Cullis, A. G. (2007). Improved AlN buffer layer technologies for UV-LEDs. In physica status solidi (c) 4 (pp. 120-124). doi:
  • Fan, W. H., Olaizola, S. M., Wells, J. P. R., Fox, A. M., Wang, T., Parbrook, P. J., . . . Skolnick, M. S. (2007). Erratum: Femtosecond studies of electron capture times in InGaNGaN multiple quantum wells (Applied Physics Letters (2004) 84 (3052)). Applied Physics Letters, 91(9). doi:
2006
  • Na, J. H., Taylor, R. A., Lee, K. H., Wang, T., Tahraoui, A., Parbrook, P., . . . Lee, J. S. (2006). Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness. APPL PHYS LETT, 89(25), . doi:
  • Aliev, G. N., Zeng, S., Bingham, S. J., Wolverson, D., Davies, J. J., Wang, T., & Parbrook, P. J. (2006). Optically-detected magnetic resonance of spin-paired complexes emitting in the spectral region in Mg-doped GaN. Physical Review B, 74(23). doi:
  • Bai, J., Wang, T., Parbrook, P. J., & Cullis, A. G. (2006). Mechanisms of dislocation reduction in an Al[sub 0.98]Ga[sub 0.02]N layer grown using a porous AlN buffer. Applied Physics Letters, 89(13), 131925. doi:
  • Wang, T., Lee, K. B., Bai, J., Parbrook, P. J., Airey, R. J., Wang, Q., . . . Cullis, A. G. (2006). Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer. Applied Physics Letters, 89(8), 081126. doi:
  • Zeng, S., Aliev, G. N., Wolverson, D., Davies, J. J., Bingham, S. J., Abdulmalik, D. A., . . . Parbrook, P. J. (2006). Origin of the red luminescence in Mg-doped GaN. Applied Physics Letters, 89(2), 022107. doi:
  • Brown, J., Wells, J. P. R., Hashemizadeh, S. A., Parbrook, P. J., Wang, T., Fox, A. M., . . . Skolnick, M. S. (2006). Fast spin relaxation in InGaN/GaN multiple quantum wells. In PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 243 (pp. 1643-1646). doi:
  • Kundys, D. O., Wells, J. P. R., Andreev, A. D., Hashemizadeh, S. A., Wang, T., Parbrook, P. J., . . . Skolnick, M. S. (2006). Resolution of discrete excited states in InxGa1-xN multiple quantum wells using degenerate four-wave mixing. PHYS REV B, 73(16), . doi:
  • Sherliker, B., Halsall, M. P., Buckle, P. D., Parbrook, P. J., & Wang, T. (2006). Effects of depletion on the emission from individual InGaN dots. Applied Physics Letters, 88(12), 122115. doi:
  • Bai, J., Wang, T., Parbrook, P. J., Ross, I. M., & Cullis, A. G. (2006). V-shaped pits formed at the GaN/AlN interface. Journal of Crystal Growth, 289(1), 63-67. doi:
  • Thomson, J. D., Pope, I. A., Smowton, P. M., Blood, P., Lynch, R. J., Hill, G., . . . Parbrook, P. (2006). The influence of acceptor anneal temperature on the performance of InGaN/GaN quantum well light-emitting diodes. Journal of Applied Physics, 99(2), 024507. doi:
  • Bai, J., Wang, T., Comming, P., Parbrook, P. J., David, J. P. R., & Cullis, A. G. (2006). Optical properties of AlGaN鈭旼aN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate. Journal of Applied Physics, 99(2), 023513. doi:
  • Zeng, S., Aliev, G. N., Wolverson, D., Davies, J. J., Bingham, S. J., Abdulmalik, D. A., . . . Parbrook, P. J. (2006). The role of vacancies in the red luminescence from Mg-doped GaN. Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1919-1922. doi:
  • Aliev, G. N., Zeng, S., Davies, J. J., Wolverson, D., Bingham, S. J., Parbrook, P. J., & Wang, T. (2006). The magnesium acceptor states in GaN: An investigation by optically-detected magnetic resonance. Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1892-1896. doi:
  • Hashemizadeh, S. A., Wells, J. P. R., Brown, J., Murzyn, P., Jones, B. D., Wang, T., . . . Skolnick, M. S. (2006). Stimulated emission and carrier dynamics in AlInGaN multi-quantum wells. In S. Hildebrandt, & M. Stutzmann (Eds.), PHYSICA STATUS SOLIDI C 鈥 CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 3 (pp. 1958-1961). doi:
  • Wang, T. (2006). Optical investigation of InGaN related quantum well structures. In Z. C. Feng (Ed.), III-Nitride Semiconductor Materials (pp. 305-343). Retrieved from 
2005
  • Hashemizadeh, S. A., Wells, J. P. R., Murzyn, P., Brown, J., Jones, B. D., Wang, T., . . . Skolnick, M. S. (2005). Picosecond carrier dynamics in AllnGaN multiple quantum wells. APPL PHYS LETT, 87(23), . doi:
  • Wang, T., Bai, J., Parbrook, P. J., & Cullis, A. G. (2005). Air-bridged lateral growth of an Al[sub 0.98]Ga[sub 0.02]N layer by introduction of porosity in an AlN buffer. Applied Physics Letters, 87(15), 151906. doi:
  • Bai, J., Wang, T., Parbrook, P. J., Lee, K. B., & Cullis, A. G. (2005). A study of dislocations in AlN and GaN films grown on sapphire substrates. Journal of Crystal Growth, 282(3-4), 290-296. doi:
  • Aliev, G. N., Zeng, S., Davies, J. J., Wolverson, D., Bingham, S. J., Parbrook, P. J., & Wang, T. (2005). Nature of acceptor states in magnesium-doped gallium nitride. Physical Review B, 71(19). doi:
  • Wang, T., Raviprakash, G., Ranalli, F., Harrison, C. N., Bai, J., David, J. P. R., . . . Ohno, Y. (2005). Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes. Journal of Applied Physics, 97(8), 083104. doi:
  • Wang, T., Ranalli, F., Parbrook, P. J., Airey, R., Bai, J., Rattlidge, R., & Hill, G. (2005). Fabrication and optical investigation of a high-density GaN nanowire array. APPL PHYS LETT, 86(10), . doi:
  • Sherliker, B., Harmer, P., Halsall, M. P., Buckle, P., Parbrook, P. J., & Wang, T. (2005). Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN. In Microelectronics Journal 36 (pp. 223-226). doi:
  • Thomson, J. D., Pope, I. A., Smowton, P. M., Blood, P., Lynch, R. J., Hill, G., . . . Parbrook, P. J. (2005). The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes. In Proceedings of SPIE 鈥 The International Society for Optical Engineering 5722 (pp. 425-430). doi:
  • Hung, W. C., Wang, T., Lin, H. -C., Chen, G. -T., Chyi, J. -I., & Cullis, A. G. (2005). Focused ion beam micromilling of GaN photonic devices with gas enhanced etching techniques. In Microscopy of Semiconducting Materials 107 (pp. 423-426). Retrieved from 
  • Alyamani, A., Sanvitto, D., Wang, T., Parbrook, P. J., Whittaker, D. M., Ross, I. M., . . . Skolnick, M. S. (2005). AlGaN-based Bragg mirrors and hybrid microcavities for the ultra-violet spectral region. In physica status solidi (c) 2 (pp. 813-816). doi:
2004
  • Wang, T., Parbrook, P. J., Whitehead, M. A., Fan, W. H., & Fox, A. M. (2004). Study of stimulated emission from InGaN/GaN multiple quantum well structures. Journal of Crystal Growth, 273(1-2), 48-53. doi:
  • Liu, Y. H., Li, H. D., Ao, J. P., Lee, Y. B., Wang, T., & Sakai, S. (2004). Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes. Journal of Crystal Growth, 268(1-2), 30-34. doi:
  • Wang, T., Lynch, R. J., Parbrook, P. J., Butt茅, R., Alyamani, A., Sanvitto, D., . . . Skolnick, M. S. (2004). High-reflectivity Al[sub x]Ga[sub 1鈭抶]N鈭旳l[sub y]Ga[sub 1鈭抷]N distributed Bragg reflectors with peak wavelength around 350 nm. Applied Physics Letters, 85(1), 43. doi:
  • Wang, T., Parbrook, P. J., Harrison, C. N., Ao, J. P., & Ohno, Y. (2004). Highly improved performance of a 350nm ultraviolet light-emitting diode containing AlxGa1鈭抶N/AlyGa1鈭抷N distributed Bragg reflectors. Journal of Crystal Growth, 267(3-4), 583-587. doi:
  • Wang, T., Parbrook, P. J., Fan, W. H., & Fox, A. M. (2004). Optical investigation of InGaN/GaN multiple-quantum wells under high excitation. APPL PHYS LETT, 84(25), 5159-5161. doi:
  • Fan, W. H., Olaizola, S. M., Wells, J. P. R., Fox, A. M., Wang, T., Parbrook, P. J., . . . Skolnick, M. S. (2004). Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells. APPL PHYS LETT, 84(16), 3052-3054. doi:
  • O鈥橬eill, J. P., Ross, I. M., Cullis, A. G., Wang, T., & Parbrook, P. J. (2004). Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells (vol 83, pg 1965, 2003). APPL PHYS LETT, 84(9), 1612. doi:
  • Kudrawiec, R., Sek, G., Sitarek, P., Ryczko, K., Misiewicz, J., Wang, T., & Forchel, A. (2004). Three beam photoreflectance as a powerful method to investigate semiconductor heterostructures. In Thin Solid Films 450 (pp. 71-74). doi:
  • Cullis, A. G., Norris, D. J., O鈥橬eill, J. P., Ross, I. M., Migliorato, M. A., Hopkinson, M., . . . Walther, T. (2004). Segregation in compound semiconductors: the Stranski-Krastanow epitaxial transition and electron beam damage processes. In D. Schryvers, J. P. Timmermans, & G. van Tendeloo (Eds.), 13th European Microscopy Congress (EMC 2004) 2 (Materials Sciences) (pp. 417-418). Herentals: Belgian Society for Microscopy, Liege.
  • Sasaki, A., Nishizuka, K., Wang, T., Sakai, S., Kaneta, A., Kawakami, Y., & Fujita, S. (2004). Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well. Solid State Communications, 129(1), 31-35. doi:
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2003
  • Vaitkus, J., Gaubas, E., Shirahama, T., Sakai, S., Wang, T., Smith, K. M., & Cunningham, W. (2003). Space charge effects, carrier capture transient behaviour and 伪 particle detection in semi-insulating GaN. In Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 514 (pp. 141-145). doi:
  • Fan, W. H., Olaizola, S. M., Wang, T., Parbrook, P. J., Wells, J. P. R., Mowbray, D. J., . . . Fox, A. M. (2003). Carrier capture times in InGaN/GaN multiple quantum wells. In PHYSICA STATUS SOLIDI B-BASIC RESEARCH 240 (pp. 364-367). doi:
  • O鈥橬eill, J. P., Ross, I. M., Cullis, A. G., Wang, T., & Parbrook, P. J. (2003). Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells. APPL PHYS LETT, 83(10), 1965-1967. doi:
  • Vaitkus, J., Cunningham, W., Gaubas, E., Rahman, M., Sakai, S., Smith, K. M., & Wang, T. (2003). Semi-insulating GaN and its evaluation for 伪 particle detection. In Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 509 (pp. 60-64). doi:
  • Ao, J. P., Wang, T., Kikuta, D., Liu, Y. H., Sakai, S., & Ohno, Y. (2003). AlGaN/GaN high electron mobility transistor with thin buffer layers. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(4 A), 1588-1589.
  • Ao, J. P., Wang, T., Kikuta, D., Liu, Y. H., Sakai, S., & Ohno, Y. (2003). AlGaN/GaN high electron mobility transistor with thin buffer layers. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(4A), 1588-1589. doi:
  • Vaitkus, J. V., Gaubas, E., Sakai, S., Lacroix, Y., Wang, T., Smith, K. M., . . . Cunningham, W. (2003). Role of Potential Barriers in Epitaxial Layers of Semi-Insulating GaN Layers. In Solid State Phenomena 93 (pp. 301-306).
  • Halsall, M. P., Harmer, P., Parbrook, P. J., Wang, T., & Wells, J. -P. R. (2003). Photoluminescence of single InGaN quantum dots grown at low surface densities by MOVPE. In physica status solidi (c) 0 (pp. 2721-2724). doi:
  • O鈥橬eill, J. P., Ross, I. M., Cullis, A. G., Wang, T., & Parbrook, P. J. (2003). Nano-clustering anomalies in InGaN/GaN multiple quantum well structures. In A. G. Cullis, & P. A. Midgley (Eds.), MICROSCOPY OF SEMICONDUCTING MATERIALS 2003 (pp. 297-300).
  • Wang, T., Parbrook, P. J., & Whitehead, M. A. (2003). MOCVD growth and optical investigation of the AlInGaN quaternary system. In Physica Status Solidi C: Conferences (pp. 2019-2022). doi:
  • Li, H. D., Wang, T., Jiang, N., Liu, Y. H., Bai, J., & Sakai, S. (2003). Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy. Journal of Crystal Growth, 247(1-2), 28-34. doi:
  • Parbrook, P. J., Wang, T., Whitehead, M. A., Harrison, C. N., Lynch, R. J., & Murray, R. T. (2003). Crack formation and development in AlGaN/GaN structures. In physica status solidi (c) 0 (pp. 2055-2058). doi:
  • Amabile, D., Martin, R. W., Wang, T., Whitehead, M. A., & Parbrook, P. J. (2003). Compositional analysis of AlInGaN quaternary layers grown by metalorganic vapour phase epitaxy. In physica status solidi (c) 0 (pp. 2478-2481). doi:
2002
  • Bai, J., Wang, T., Liu, Y., Naoi, Y., Li, H., & Sakai, S. (2002). Influence of pyramidal defects on photoluminescence of Mg-doped AlGaN/GaN superlattice structures. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(10), 5909-5911.
  • Lee, Y. B., Wang, T., Liu, Y. H., Ao, J. P., Li, H. D., Sato, H., . . . Sakai, S. (2002). Fabrication of high-output-power AlGaN/GaN-based UV-light-emitting diode using a Ga droplet layer. Japanese Journal of Applied Physics, Part 2: Letters, 41(10 A).
  • Lee, Y. B., Wang, T., Liu, Y. H., Ao, J. P., Li, H. D., Sato, H., . . . Sakai, S. (2002). Fabrication of high-output-power AlGaN/GaN-based UV-Light-Emitting diode using a Ga droplet layer. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(10A), L1037-L1039. doi:
  • Wang, T., Liu, Y. H., Lee, Y. B., Ao, J. P., Bai, J., & Sakai, S. (2002). 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate. Applied Physics Letters, 81(14), 2508. doi:
  • Lee, Y. B., Wang, T., Liu, Y. H., Ao, J. P., Izumi, Y., Lacroix, Y., . . . Sakai, S. (2002). High-performance 348 nm AlGaN/GaN-based ultraviolet-light-emitting diode with a SiN buffer layer. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(7 A), 4450-4453.
  • Lee, Y. B., Wang, T., Liu, Y. H., Ao, J. P., Izumi, Y., Lacroix, Y., . . . Sakai, S. (2002). High-performance 348 nm AlGaN/GaN-based ultraviolet-light-emitting diode with a SiN buffer layer. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41(7A), 4450-4453. doi:
  • Li, H. D., Wang, T., Liu, Y., Ao, J. P., & Sakai, S. (2002). V-shaped defects in AlGaN/GaN superlattices grown on thin undoped-GaN layers on sapphire substrate. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(6B), L732-L735. doi:
  • Li, H., Wang, T., Liu, Y., Ao, J., & Sakai, S. (2002). V-shaped defects in AlGaN/GaN superlattices grown in thin undoped-GaN layers on sapphire substrate. Japanese Journal of Applied Physics, Part 2: Letters, 41(6 B).
  • Wang, T., Liu, Y. H., Lee, Y. B., Izumi, Y., Ao, J. P., Bai, J., . . . Sakai, S. (2002). Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes. Journal of Crystal Growth, 235(1-4), 177-182. doi:
  • Vaitkus, J., Gaubas, E., Ka啪ukauskas, V., Lacroix, Y., Sakai, S., Smith, K., . . . Wang, T. (2002). Space charge effects and carrier capture transient behaviour in semi-insulating GaAs and GaN. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (pp. 185-189). Akimov, A. V., Cavill, S. A., Kent, A. J., Stanton, N. M., Wang, T., & Sakai, S. (2002). Phonon emission by photoexcited carriers in InGaN/GaN multiple quantum wells. Journal of Physics: Condensed Matter, 14(13), 3445-3455. doi:
  • Sakai, S., Wang, T., Wang, H. X., & Bai, J. (2002). MOCVD Growth of Wide-bandgap Nitride Semiconductors. In Proceedings of SPIE 鈥 The International Society for Optical Engineering 83 CR (pp. 47-76).
2001
  • Chung, S. H., Park, J. W., Kim, S. T., Wang, T., & Sakai, S. (2001). Annealing effect of oxygen on p-GaN epilayers grown by MOCVD. Journal of the Korean Physical Society, 39(SUPPL. Part 1). Li, H. D., Wang, T., Lacroix, Y., Jiang, N., & Sakai, S. (2001). Influence of inversion domains on formation of V-shaped pits in GaN films. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(11B), L1254-L1256. doi:
  • Li, H., Wang, T., Lacroix, Y., Jiang, N., & Sakai, S. (2001). Influence of inversion domains on formation of V-shaped pits in GaN films. Japanese Journal of Applied Physics, Part 2: Letters, 40(11 B).
  • S臋k, G., Ryczko, K., Misiewicz, J., Bayer, M., Wang, T., & Forchel, A. (2001). Influence of Built-in Electric Field on Forbidden Transitions in In x Ga 1-x As/GaAs Double Quantum Well by Three-Beam Photoreflectance. In Acta Physica Polonica A 100 (pp. 417-424). doi:
  • Bai, J., Wang, T., Li, H. D., Jiang, N., & Sakai, S. (2001). (0001) oriented GaN epilayer grown on sapphire by MOCVD. Journal of Crystal Growth, 231(1-2), 41-47. doi:
  • Bai, J., Wang, T., & Sakai, S. (2001). Study of the strain relaxation in InGaN/GaN multiple quantum well structures. Journal of Applied Physics, 90(4), 1740. doi:
  • Bai, J., Wang, T., & Sakai, S. (2001). Photoluminescence study on InGaN/GaN quantum well structure grown on (112虅0) sapphire substrate. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(7), 4445-4449.
  • Wang, T., Bai, J., & Sakai, S. (2001). Modulation-doping influence on the photoluminescence from the two-dimensional electron gas of AlxGa1-xN/GaN heterostructures. Physical Review B 鈥 Condensed Matter and Materials Physics, 63(20), 2053201-2053204.
  • Lee, K. J., Harris, J. J., Kent, A. J., Wang, T., Sakai, S., Maude, D. K., & Portal, J. -C. (2001). Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures. Applied Physics Letters, 78(19), 2893. doi:
  • Harris, J. J., Lee, K. J., Wang, T., Sakai, S., Bougrioua, Z., Moerman, I., . . . Portal, J. -C. (2001). Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures. Semiconductor Science and Technology, 16(5), 402-405. doi:
  • Wang, T., Bai, J., Sakai, S., & Ho, J. K. (2001). Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes. Applied Physics Letters, 78(18), 2617. doi:
  • Wang, T., Bai, J., & Sakai, S. (2001). Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrates. Journal of Crystal Growth, 224(1-2), 5-10. doi:
  • Harris, J. J., Lee, K. J., Maude, D. K., Portal, J. -C., Wang, T., & Sakai, S. (2001). Phase diagram for the quantum Hall effect in a high-mobility AlGaN/GaN heterostructure. Journal of Physics: Condensed Matter, 13(8), L175-L181. doi:
  • Bai, J., Wang, T., Izumi, Y., & Sakai, S. (2001). A study of dislocations in InGaN/GaN multiple-quantum-well structure grown on () sapphire substrate. Journal of Crystal Growth, 223(1-2), 61-68. doi:
  • Akimov, A. V., Cavill, S. A., Kent, A. J., Stanton, N. M., Wang, T., & Sakai, S. (2001). Phonon and photon emission from optically excited InGaN/GaN multiple quantum wells. Physica Status Solidi (B) Basic Research, 228(1), 107-110. doi:
  • Stanton, N. M., Kent, A. J., Cavill, S. A., Akimov, A. V., Lee, K. J., Harris, J. J., . . . Sakai, S. (2001). Energy relaxation by warm two-dimensional electrons in a GaN/AlGaN heterostructure. Physica Status Solidi (B) Basic Research, 228(2), 607-611. doi:
2000
  • Sakai, S., Wang, T., Morishima, Y., & Naoi, Y. (2000). A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE. In Journal of Crystal Growth 221 (pp. 334-337). doi:
  • Bai, J., Wang, T., & Sakai, S. (2000). Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures. Journal of Applied Physics, 88(8), 4729. doi:
  • Wang, T., Bayer, M., Forchel, A., Gippius, N. A., & Kulakovskii, V. (2000). Magneto-optical study of excitonic states in multiple coupled quantum wells. Physical Review B, 62(11), 7433-7439. doi:
  • Wang, T., Nakagawa, D., Shirahama, T., Bai, J., & Sakai, S. (2000). SC-7-9 The characterization of AlGaN/GaN Heterostructures grown by MOCVD on sapphire substrates. Proceedings of the Society Conference of IEICE, 2000(2), 151-152.
  • Wang, H. X., Wang, T., Mahanty, S., Komatsu, F., Inaoka, T., Nishino, K., & Sakai, S. (2000). Growth of GaN layer by metal-organic chemical vapor deposition system with a novel three-flow reactor. Journal of Crystal Growth, 218(2-4), 148-154. doi:
  • Lachab, M., Youn, D. -H., Qhalid Fareed, R. S., Wang, T., & Sakai, S. (2000). Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition. Solid-State Electronics, 44(9), 1669-1677. doi:
  • Chung, S. H., Lachab, M., Wang, T., Lacroix, Y., Basak, D., Fareed, Q., . . . Sakai, S. (2000). Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapor deposition. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(8), 4749-4750.
  • Davidson, J. A., Dawson, P., Wang, T., Sugahara, T., Orton, J. W., & Sakai, S. (2000). Photoluminescence studies of InGaN/GaN multi-quantum wells. Semiconductor Science and Technology, 15(6), 497-505. doi:
  • Wang, T., Bai, J., Sakai, S., Ohno, Y., & Ohno, H. (2000). Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time. Applied Physics Letters, 76(19), 2737. doi:
  • Wang, T., Morishima, Y., Naoi, N., & Sakai, S. (2000). A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate. Journal of Crystal Growth, 213(1-2), 188-192. doi:
  • Wang, T., Shirahama, T., Sun, H. B., Wang, H. X., Bai, J., Sakai, S., & Misawa, H. (2000). Influence of buffer layer and growth temperature on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition. Applied Physics Letters, 76(16), 2220. doi:
  • S醛k, G., Ryczko, K., Kubisa, M., Misiewicz, J., Bayer, M., Wang, T., . . . Forchel, A. (2000). Photoreflectance spectroscopy of coupled InxGa1鈭抶As/GaAs quantum wells. In Thin Solid Films 364 (pp. 220-223). doi:
  • Wang, T., Saeki, H., Bai, J., Shirahama, T., Lachab, M., Sakai, S., & Eliseev, P. (2000). Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures. Applied Physics Letters, 76(13), 1737. doi:
  • Lachab, M., Nozaki, M., Wang, J., Ishikawa, Y., Fareed, Q., Wang, T., . . . Sakai, S. (2000). Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process. Journal of Applied Physics, 87(3), 1374. doi:
  • Fewster, P. F., Andrew, N. L., Hughes, O. H., Staddon, C., Foxon, C. T., Bell, A., . . . Moerman, I. (2000). X-ray studies of group III-nitride quantum wells with high quality interfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 18(4), 2300. doi:
  • Wang, T., Bai, J., Sakai, S., IPAP., IPAP., & IPAP. (2000). The investigation on the emission mechanism of InGaN/GaN quantum well structure. In PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 (pp. 524-527). Retrieved from 
  • Sun, H. B., Juodkazis, S., Eliseev, P. G., Sugahara, T., Wang, T., Matsuo, S., . . . Misawa, H. (2000). Laser-induced damage threshold and laser processing of GaN. In HIGH-POWER LASER ABLATION II 3885 (pp. 311-322). doi:
  • Sakai, S., Saeki, F., Izumi, Y., Wang, T., IPAP., IPAP., & IPAP. (2000). Indium silicon co-doping in AlGaN/GaN multiple quantum wells. In PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 (pp. 637-639). Retrieved from 
  • Wang, T., Bai, J., Sakai, S., IPAP., IPAP., & IPAP. (2000). Comparison of the optical properties in InGaN/GaN quantum well structures grown on (0001) and (11(2)over-bar0) sapphire substrates. In PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 (pp. 382-385). Retrieved from 
Pre 2000
  • Wang, T., Ohno, Y., Lachab, M., Nakagawa, D., Shirahama, T., Sakai, S., & Ohno, H. (1999). MOCVD growth and transport investigation of two-dimensional electron gas in AlGaN/GaN heterostructures on sapphire substrates. Physica Status Solidi (B) Basic Research, 216(1), 743-748.
  • Wang, T., Nakagawa, D., Lachab, M., Sugahara, T., & Sakai, S. (1999). Investigation of the optical properties in InGaN/GaN quantum well structure. In Physica Status Solidi (B) Basic Research 216 (pp. 279-285).
  • Sugahara, T., Sakai, S., Lachab, M., Fareed, R. S. Q., Tottori, S., & Wang, T. (1999). Investigation of InGaN/GaN quantum wells grown on sapphire and bulk GaN substrates. In Physica Status Solidi (B) Basic Research 216 (pp. 273-277).
  • SUGAHARA, T., FAREED, R. S. Q., WANG, T., NAOI, Y., NISHINO, K., & SAKAI, S. (1999). Cathodoluminescence Characterization of Dislocation Property in Nitride Semiconductors. Electron-microscopy, 34, 225-228.
  • Mahanty, S., Hao, M., Sugahara, T., Fareed, R. S. Q., Morishima, Y., Naoi, Y., . . . Sakai, S. (1999). V-shaped defects in InGaN/GaN multiquantum wells. Materials Letters, 41(2), 67-71. doi:
  • Wang, H. X., Wang, T., Lachab, M., Ishikawa, Y., Hao, M. S., Oyama, K., . . . Tominaga, K. (1999). Growth of a GaN layer on a glass substrate by metal organic chemical vapor deposition. Journal of Crystal Growth, 206(3), 241-244. doi:
  • Wang, J., Nozaki, M., Lachab, M., Ishikawa, Y., Qhalid Fareed, R. S., Wang, T., . . . Sakai, S. (1999). Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots. Applied Physics Letters, 75(7), 950. doi:
  • Wang, T., & Forchel, A. (1999). Experimental and theoretical study of strain-induced AlGaAs/GaAs quantum dots using a self-organized GaSb island as a stressor. Journal of Applied Physics, 86(4), 2001. doi:
  • Wang, T., Ohno, Y., Lachab, M., Nakagawa, D., Shirahama, T., Sakai, S., & Ohno, H. (1999). Electron mobility exceeding 10[sup 4] cm[sup 2]/V s in an AlGaN鈥揋aN heterostructure grown on a sapphire substrate. Applied Physics Letters, 74(23), 3531. doi:
  • Wang, T., Lachab, M., Nakagawa, D., Shirahama, T., & Sakai, S. (1999). Investigation of two-dimensional electron gas in AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition (MOCVD). Journal of Crystal Growth, 203(3), 443-446. doi:
  • Wang, T., Nakagawa, D., Lachab, M., Sugahara, T., & Sakai, S. (1999). Optical investigation of InGaN/GaN multiple quantum wells. Applied Physics Letters, 74(21), 3128. doi:
  • Wang, J., Nozaki, M., Lachab, M., Qhalid Fareed, R. S., Ishikawa, Y., Wang, T., . . . Sakai, S. (1999). Formation and optical properties of InGaN/GaN nano-structures grown on amorphous Si substrates by MOCVD. Journal of Crystal Growth, 200(1-2), 85-89. doi:
  • Wang, T., Sugahara, T., Sakai, S., & Orton, J. (1999). The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diode. Applied Physics Letters, 74(10), 1376. doi:
  • Sugahara, T., Hao, M., Wang, T., Nakagawa, D., Naoi, Y., Nishino, K., & Sakai, S. (1999). Phase separation mechanism around dislocation in an InGaN/GaN quantum well structure. In COMPOUND SEMICONDUCTORS 1998 (pp. 645-650). Retrieved from 
  • Wang, T., & Forchel, A. (1999). Growth of self-organized GaSb islands on a GaAs surface by molecular beam epitaxy. Journal of Applied Physics, 85(5), 2591. doi:
  • Wang, J., Nozaki, M., Ishikawa, Y., Lachab, M., Fareed, R. S. Q., Wang, T., & Sakai, S. (1999). Formation and optical properties of selectively grown InGaN/GaN nanostructures. In COMPOUND SEMICONDUCTORS 1998 (pp. 829-832). Retrieved from 
  • Wang, J., Nozakib, Y. Ishikawa, M., Hao, M. S., Morishima, Y., Wang, T., Naoi, Y., & Sakai, S. (1999). Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth. Journal of Crystal Growth, 197(1-2), 48-53. doi:
  • Wang, T., Nakagawa, D., Wang, J., Sugahara, T., & Sakai, S. (1998). Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells. Applied Physics Letters, 73(24), 3571. doi:
  • Sugahara, T., Hao, M., Wang, T., Nakagawa, D., Naoi, Y., Nishino, K., & Sakai, S. (1998). Role of dislocation in InGaN phase Separation. Japanese Journal of Applied Physics, Part 2: Letters, 37(10 SUPPL. B).
  • Sugahara, T., Hao, M., Wang, T., Nakagawa, D., Naoi, Y., Nishino, K., & Sakai, S. (1998). Role of dislocation in InGaN phase separation. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 37(10B), L1195-L1198. doi:
  • Wang, T., Bayer, M., & Forchel, A. (1998). Effect of the hole subband mixing on the spin splitting of heavy-hole excitons in coupled double quantum wells. Physical Review B, 58(16), R10183-R10186. doi:
  • Wang, T., Kieseling, F., & Forchel, A. (1998). Transition from direct to indirect band structure induced by the AlSb layer inserted in the GaSb/AlSb quantum well. Physical Review B, 58(7), 3594-3596. doi:
  • Wang, T., Sugahara, T., & Sakai, S. (1998). The Quantum-Confined-Stark-Effect on the luminescence properties of InGaN/GaN/AlGaN pn junction structure. Technical report of IEICE. LQE, 98(109), 67-72. Wang, T., Sugahara, T., Sakai, S., & Orton, J. (1998). Optical investigation of the high quality InGaN/GaN MQW by MOCVD with three layer laminar flow gas injection. In BLUE LASER AND LIGHT EMITTING DIODES II (pp. 357-360). Retrieved from 
  • Wang, T., & Forchel, A. (1998). Growth and optical investigation of strain-induced AlGaAs/GaAs quantum dots using self-organized GaSb islands as a stressor. Applied Physics Letters, 73(13), 1847. doi:
  • Wang T., Zhang LD., & Mo CM. (1994). A study on growth and crystallization behavior of nanostructured amorphous silicon nitride. NanoStructured Materials, 4(2), 207-213. doi:
  • Wang, T., Zhang LD., Mo CM., Fan XJ., & Hu JT. (1993). The Study of Dangling Bond In Nanostructured Amorphous Silicon Nitride By ESR. Journal of Applied Physics, 74(10), 6313-6316. Retrieved from 
  • Wang, T., Zhang LD., & Mo CM. (1993). Anomalous Dielectric Behavior in Nanometer-Sized Amorphous Silicon Nitride. Phys. Lett., 10(11), 676-679. Retrieved from 
  • Wang, T., Zhang LD., Hu JT., & Mo CM. (1993). A study of defects in nanostructured amorphous silicon nitride. Physica Status Solidi (A) Applications and Materials, 139(2), 303-307. doi:
  • Zhang LD., Mo CM., Xie CY., & Wang, T. (1993). Gap States in Nanometer-sized Amorphous Silicon Nitride Solids. Journal of Applied Physics, 73(10), 5185-5188. Retrieved from 
  • Zhang LD., Mo CM., Wang T., Cai SZ., & Xie CY. (1993). Structure and Bond Properties of Compacted and Heat-Treated Silicon Nitride Particles. Physica Status Solidi (A) Applications and Materials, 136(2), 291-299. doi:

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